• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.373-374
• /
• 2008

Insulating polymers and their composites have been widely used in various electric apparatus or cables. Recently, the effects of interfaces (metal/insulator or insulator/insulator interfaces) on electrical insulation have attracted much attention. However, interfacial phenomena in actual insulation systems and their physical backgrounds are not well understood yet. In this paper, the behaviour of charge carriers near the metal/polymer interface and its effects on conduction and breakdown phenomena are discussed. The metal/polymer interface strongly affects carrier injection, space charge formation and breakdown phenomena. Based on their experimental results, the physical backgrounds of the interfacial phenomena are explained.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1001-1007
• /
• 1996

The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.33-35
• /
• 1988

From the study of mechanism of electrical conduction of film which is made from Polyethylene Terephthalate at very high temperature which is larger than low electric field and glass transition point, we find that there is a extraordinary non ohmic region (I∝V$^n$, 0

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.1-4
• /
• 1988

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.71-74
• /
• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.3
• /
• pp.107-111
• /
• 2015

Our work is based on the development of a numerical model to develop a methodology for predicting the aging and breakdown in insulation due to the dynamics of space charge packets. The model of bipolar charge transports is proposed to simulate space charge dynamic for high DC voltage in law-density polyethylene (LDPE), taking into account the trapping and detrapping of recombination phenomena, this model has been developed and experimentally validation. Theoretical formulation of the physical problem is based on the Poisson, the continuity and the transport equations as well as on the appropriate models for injection. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges, conduction and displacement current densities, and the external current.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.19 no.11
• /
• pp.3072-3083
• /
• 1995

The numerical simulation on the three-dimensional natural convection heat transfer in the enclosure with heat generating chip is performed, and the effects of convective heat loss and vents are also examined. The effects of the Rayleigh number and outer Nusselt number (Nu$_{0}$) on the maximum chip temperature and the fractions of heat loss from the hot surfaces are investigated. The results show that conduction through the substrate is dominant in heat dissipation. With the increase of Rayleigh number, heat dissipation through the chip surfaces increases and heat loss through the substrate decreases. Maximum dimensionless temperature with vents is found to decrease about 40% compared to the one without vents at Nu$_{0}$=0.l. It is also shown that effects of size and location of the vents are negligible.ble.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.2
• /
• pp.100-106
• /
• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.350-353
• /
• 1999

This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.437-440
• /
• 1999

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.