Anomalous Subthreshold Characteristics for Charge Trapping NVSM at memory states. (기억상태에 있는 전하트랩형 비휘발성 반도체 기억소자의 하위문턱이상전류특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 1998.11a
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- pp.13-16
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- 1998