• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.74-76
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• 1995

ZnO varistor with composition of ZnO(90wt%)-Bi$_2$O$_3$(3wt%)-Sb$_2$O$_3$(3.6wt%)-CO$_2$O$_3$(1.16wt%)-NiO(0.88wt%)-MnO$_2$(0.71wt%)-Cr$_2$O$_3$(0.93wt%) according to Al$_2$O$_3$addtive was fabricated by sintering methods. The effects of Al$_2$O$_3$dopant on the I-V characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to Al$_2$O$_3$dopting. And the conductive mechanism of ZnO varistor in prebreakdown region were investigated with defect model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.54-57
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• 1997

The electrical properties such as space charge accumulation, dielectric breakdown and water treeing of acrylic acid-grafted polyethylene (PE-g-AA) and n-butyl acrylate-grafted polyethylene (PE-g-nBA) were investigated. In PE-g-AA, heterocharge founded in LDPE decreased with the increase of AA graft ratio and changed to the homocharge formation above 0.lwt% due to the introduction of carbonyls. Conduction currents decreased with the increase of AA graft ratio. AC breakdown strength increased and water treeing length decreased with the increase of graft ratio in PE-g-AA and PE-g-nBA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.79-82
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• 1991

In this paper we examined, by using the PET film with thickness of 16-350$\mu\textrm{m}$, space charge focused on TSC peak at the slightly higher temperature than transition temperture of the glass. In the result we found that charge quantity, leaking current and absorbing current at TSC peak were rarely dependant its thickness at the Al foil contact electrde. In the case of Al evaporated electrode, the absorbing current was rarely dependent its thickness but TSC charge quantity at C-peak was increased directly proportional to its thickness and leaking current was decayed inversely proportional to its thickness. Also current-volteag characteristics showed sublinerar property under ohmic area at the Al evaporated electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.40-43
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• 1991

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.1129-1131
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• 2001

A new low cost single stage high power factor electronic ballast for fluorescent lamps is presented in this paper. The proposed topology is based on integration of two-boost converter and LC type high frequency resonant converter. A ballast is obtained by simple construction, because full bridge rectifier diode is eliminated and simple control circuits is applied. Using two boost converter operating positive and negative half cycle respectively at line frequency (60Hz), operating in discontinuous conduction mode performs high power factor. The simulated and experimental results for 64W fluorescent lamps operating at 45kHz switching frequency and 110V line voltage have been obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1018-1021
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• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.43-47
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• 2001

Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.121-124
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• 1998

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. This paper describes temperature dependence of conductivity, impedance spectroscopy, electrochemical properties of PVDF electrolytes as a function of a mixed ratio. Polyvinylidene(PVDF) based polymer electrolyte films were prepared by thermal gellification method of preweighed PVDF, plasticizer and Li salt. The conductivity of PVDF electrolytes was 10$\^$-3/S/cm. 25PVDFPC$\_$10/EC$\_$10/LiClO$_4$ electrolyte shows the better conductivity of the others. 25PVDFPC$\_$10/EC$\_$10/LiClO$_4$electrolyte remains stable up to 4.7V vs. Li/Li$\^$+/. Steady state current method and ac impedance used for the determination of transference numbers in PVDFD electrolyte film. The transference number of 25PVDFPC$\_$10/EC$\_$10/LiClO$_4$electrolyte is 0.58.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.13-16
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• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.