• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.4 s.235
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• pp.526-536
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• 2005

A heat dissipation modeling method of EEE parts, or semi-empirical heat dissipation method, is developed for thermal design and analysis an electronic equipment of geostationary satellite. The power consumption measurement value of each functional breadboard is used for the heat dissipation modeling method. For the purpose of conduction heat transfer modeling of EEE parts, surface heat model using very thin ignorable thermal plates is developed instead of conventional lumped capacity nodes. The thermal plates are projected to the printed circuit board and can be modeled and modified easily by numerically preprocessing programs according to design changes. These modeling methods are applied to the thermal design and analysis of CTU (Command and Telemetry Unit) and verified by thermal cycling and vacuum tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.349-352
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• 2010

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.89-96
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• 2015

This paper presents a high efficiency, PSM/DCM/CCM triple mode boost DC-DC converter for mobile application. This device operates at Pulse-Skipping Mode(PSM) when it enters light load, and otherwise operate the operating frequency of 1.4MHz with Pulse-Width Modulation(PWM) mode. Especially in order to improve the efficiency during the Discontinuous-Conduction Mode(DCM) operation period, the reverse current prevention circuit and oscillations caused by the inductor and the parasitic capacitor to prevent the Ringing killer circuit is added. The input voltage of the boost converter ranges from 2.5V ~ 4.2V and it generates the output of 4.8V. The measurement results show that the boost converter provides a peak efficiency of 92% on CCM and 87% on DCM. And an efficiency-improving PWM operation raises the efficiency drop because of transition from PWM to PFM. The converter has been fabricated with a 0.18um Dongbu BCDMOS technology.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1916-1918
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of ${\beta}-SiC+ZrB_2$ composites with $Al_2O_3+Y_2O_3$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity) and follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles.

• Polymer Science and Technology
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• v.15 no.3
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• pp.317-326
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• 2004

광자 (photon)를 이용하여 정보의 전달, 표시, 감지 그리고 저장이 가능한 다양한 형태의 소자들은 현재 그 주를 이루고 있는 전자 (electron)가 매개인 소자를 대체할 수 있는 가능성을 가지고 활발히 연구되고 있다. 전자의 움직임은 재료 내에 주기적으로 배열되어 있는 원자나 분자의 결정구조에 의해 제어된다. 이는 전도밴드 (conduction band)와 원자가 밴드(valance band) 사이에 존재하는 전자 밴드갭 (electronic band gap)을 조절함으로써 가능하다. 이와 유사한 개념으로 광자의 움직임은 유전체의 주기적인 배열을 통해서 가능함이 제안되었다. 규칙적인 유전체의 결정구조를 가진 재료에 빛이 조사되었을 때, 그 재료를 통과하지 못하는 특정파장이 결정되며 이를 광자 밴드갭 (photonic band gap: PBG)이라 한다. (중략)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.307-308
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• 2007

• 전기의세계
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• v.29 no.2
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.493-496
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• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.