Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on the Electrical Properties of a-IGZO TFTs Depending on Processing Parameters

공정 변수에 따른 비정질 인듐갈륨징크옥사이드 산화물 반도체 트랜지스터의 전기적 특성 연구

  • Chong, Eu-Gene (Electronic Materials Center, Korean Institute of Science and Technology) ;
  • Jo, Kyoung-Chol (Electronic Materials Center, Korean Institute of Science and Technology) ;
  • Kim, Seung-Han (Electronic Materials Center, Korean Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korean Institute of Science and Technology)
  • 정유진 (한국과학기술연구원 전자재료연구단) ;
  • 조경철 (한국과학기술연구원 전자재료연구단) ;
  • 김승한 (한국과학기술연구원 전자재료연구단) ;
  • 이상렬 (한국과학기술연구원 전자재료연구단)
  • Published : 2010.05.01
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Abstract

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.

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References

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