• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.303-303
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• 2011

Orderings and electronic structures of organic molecules on metal substrates have been studied due to possible applications in electronic devices. In molecular systems, delocalized pi-electrons play important roles in the adsorption behaviors and electronic structures. We studied the adsorption and electronic structures of Co-Porphyrin molecules on Au(111) using scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperature. Molecules form closely packed two-dimensional islands on Au(111) surface with two different types, having different shape evolutions in our energy-dependent STM observations. The Kondo resonance state, occurred by spin exchange interaction between the Co center atom and conduction electrons in the metal substrate, was observed in one type, while it was absent in the other type in scanning tunneling spectroscopy measurements. Possible origins of two molecular shapes will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.446-447
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• 2007

Aluminisum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). In our paper, AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$, $800^{\circ}C$ for 2 hr with $N_2$ atmosphere, respectively. We investigated that the electric properties and qualitative analysis of AZO films, which measured using the methods of Hall effect, X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Society of Industry Convergence
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• v.12 no.4
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• pp.179-186
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• 2009

Electronic components in an enclosure have been investigated to prevent undesired thermal problems. The electronic devices, such as ECUs of automotive engines, are operated under the contaminated environments, so that they rely on the passive cooling without any fluid-driving methods. Therefore the radiation heat dissipation plays more important role than the conduction and convection heat transfer. Hence their combined heat dissipation phenomena have been simulated by a numerical model to reveal the effects of supplied heat flux, emissivity of material, geometry of enclosure, charging gas and pressure. The result showed that the radiation had a significant effect on the heat dissipation of module in an enclosure, and some space above the module should be reserved to prevent its thermal problem. In addition, the higher thermal conductivity and pressure of gas in an enclosure could be necessary to improve the thermal dissipation from the electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.45-49
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• 2008

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.150-155
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• 1997

Modelling and Simulation of the activation process for the myocardium is meaningful to understand special excitation conduction system in the heart and to study cardiac functions. In this paper, we propose two dimensional cellular automata model for the activation process of the myocardium and simulated by means of discrete time and discrete event algorithm. In the model, cells are classified into anatomically similar characteristic parts of heart; SA node, internodal tracks, AV node, His bundle, bundle branch and four layers of the ventricular muscle, each of which has a set of cells with preassigned properties, that is, activation time, refractory duration and conduction time between neighbor cell. Each cell in this model has state variables to represent the state of the cell and has some simple state transition rules to change values of state variables executed by state transition function. Simulation results are as follows. First, simulation of the normal and abnormal activation process for the myocardium has been done with discrete time and discrete event formalism. Next, we show that the simulation results of discrete time and discrete event cell space model is the same. Finally, we compare the simulation time of discrete event myocardium model with discrete time myocardium models and show that the discrete event myocardium model spends much less simulation time than discrete time myocardium model and conclude the discrete event simulation method Is excellent in the simulation time aspect if the interval deviation of event time is large.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1092-1095
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• 2001

Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.111-120
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• 1998

In this paper, the $(SrPb)(CaMg)TiO_3$ ceramics with paraelectric properties were fabricated by the mixed oxide method. It was investigated that which the variation of contents of $Bi_2O_3{\cdot}3TiO_2$ effects on structural, dielectrical and electrical properties of specimens. As a result, the grain size were grown with increasing the contents of $Bi_2O_3{\cdot}3TiO_2$. The relative dielectric constants were increased up to 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$, and decreased more or less at a low temperature in the specimens which had more than. But the temperature coefficient. of capacitance were showed ${\pm}25$[%]. The dielectric loss were less than 0.05 in all specimens which had more than 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$. In order to investigate the behavior of charged particles, the characteristics of electrical conduction were measured. As a result, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to space charge which injected from electrode, above 40[kV/cm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.575-582
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• 2000

The Electrical conduction and optical properties of Ta$_{2}$/O$_{5}$ thin films as the insulators in DRAM capacitors were studied. Liquid Ta/sib 2//O sub 5/ were prepared by a sol-gel processing and multiple layers were applied by spin-coating up to thickness of 800$\AA$. At annealing temperature of 300~$600^{\circ}C$ the electrical conduction and specific dielectric constant were discussed the behaivor of carrier were observed by the Thermally Stimulated Current (TSC) at the temperature range of 30~23$0^{\circ}C$. At annealing temperature of 300~$600^{\circ}C$ the samples were found to be amorphous below $600^{\circ}C$ and crystalline over it. The electrical strength was about 2.2 MV/cm at 40$0^{\circ}C$. In spite of noncrystallization over 50$0^{\circ}C$ the increasing of leakage current due to pinholes and increasing creak. The refractive index was obtained maximum (2.2) at 40$0^{\circ}C$. The dielectric constant was obtained maximum(18.6) at 40$0^{\circ}C$. TSC was observed one peak at the temperature range of 30~23$0^{\circ}C$ from sample at 40$0^{\circ}C$. In the case of collecting voltage the peak size is decreased in proportion to collecting voltage and then the peak may be thought carrier to be a ionic space charge.e.