• Electrical & Electronic Materials
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• v.6 no.1
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• pp.50-54
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• 1993

각종 monomer를 공중합시킨 PE의 고전계 전기전도와 X선 유기 TSC(X-ray induced thermally stimulated current)를 측정하고 공중합 monomer의 영향에 대하여 검토하였다. 할로겐을 함유한 공중합 PE에서 고전계 전기전도가 억제되는 것을 관찰하였다. 또 할로겐을 함유하는 monomer를 공중합시킨 PE의 X선 유기 TSC에서는 공중합에 의한 전자 trap은 약 0.4eV정도로 평가된다. 이들 시료에서 절연 파괴 강도가 상승한 것은 전자 트랩이 전자의 전계가속을 억제하여 고전계 전기전도를 억제시키고 절연파괴강도를 향상 시킨 것으로 추측된다.

• Electrical & Electronic Materials
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• v.4 no.2
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• pp.132-142
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• 1991

본 연구에서는 유기절연재료의 재방사선 재료개발을 위한다는 측면에서 두께 15[.mu.m]의 이축 연신 폴리프로필렌 필름을 시료로 선정하여 Co$^{60}$-.gamma.으로 조사시켜 온도 25-55[.deg.C], 전계 10-250[MV/m]사이에서 방사선 조사량 변화에 따른 전기전도현상을 연구하였다. 조사된 시료의 전기전도는 온도에 크게 의존하여 전계의 증가와 더불어 각기 다른 전도기구 특성을 갖는 4개의 영역으로 구분되었는데 각 영역별로 조사선량 변화에 따른 하전입자들의 거동상황을 규명하고 기초적인 제 물성정수를 결정하였다.

• Electrical & Electronic Materials
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• v.1 no.4
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• pp.333-341
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• 1988

포리에틸렌, 테레프탈레트를 금속감화물로 오염시켜 열자극특성을 중심으로 가동이온의 중성화, 재이온화 및 이동의 과정등에서 이온의 거동에 관하여 검토하였다. PET가 오염이 되면 이온이 증가되고 전극금속의 영향이 있으며 고온에서 서브리니어 특성을 가지며 가동이온의 증성화 현상이 있는 것을 밝혔다. 가동이돈의 주기적 운동에 기인한 직류전기전도모델로 실험한 결과가 정성적으로 정상전류 전압 특성과 일치함이 입증되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.439-442
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• 1998

In this paper, organic thin film LED(light emitting diode) having ITO glass/Alq$_3$/Al structure using an Alq$_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, I-V characteristics were investigated, Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of Alq$_3$ material as light emitting device.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.225-227
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• 2006

Active power factor correction methods for electronic ballast are reviewed in this paper. PFC technology becomes more important due to various wattage ratings of new light sources. Expecially, most popular two method critical conduction mode and average mode, are described. Each characteristics are compared in relation to application target and power rating.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.130.2-130
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• 2000

• Journal of the Korean Chemical Society
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• v.31 no.4
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• pp.301-307
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• 1987

The electrical conductivity of highly pure polycrystalline sample of $La_2O_3$ has been measured at temperatures from $600^{\circ}C$ to $1,050^{\circ}C$ and oxygen pressure range of $1{\times}10^{-6}$ torr to $1{\times}10^2$ torr. The defect structure and semiconductor type are investigated by measuring the temperature and oxygen pressure dependences of electrical conductivity. Sintered $La_2O_3$ exhibits the electrical conductivities in the range of $1{\times}10^{-9}\;to\;1{\times}10^{-3}\;ohm^{-1}{\cdot}cm^{-1}$ under the above oxygen pressures. The oxygen pressure dependences on electrical conductivity are characterized by 5.3 at $1,000^{\circ}C$ and 5.7 at $700^{\circ}C$ and more higher values of 9∼14 below $700^{\circ}C$. The increase in n value with decreasing temperature indicates that a simple conduction mechanism does not exist in this material. The conduction carriers are not metal vacancy but oxygen ion at lower pressures. The conduction data indicate a significant ionic conduction at lower temperatures and electronic conduction at higher temperatures.

• Journal of the Korean Electrochemical Society
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• v.23 no.2
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• pp.47-55
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• 2020

Highly loaded LiCoO₂ positive electrodes are prepared to construct high-energy density lithium-ion batteries, their electrochemical performances are evaluated. For the standard electrode, a loading of about 2.2 mAh/㎠ is used, and for a high-loading electrode, an electrode is manufactured with a loading level of about 4.4 mAh/㎠. The content of carbon black as electronic conducting additive, and the porosity of the electrode are configured differently to compare the effects of electron conduction and ionic conduction in the highly loaded LiCoO₂ electrode. It is expected that the electrochemical performance is improved as the amount of the carbon black increases, but the specific capacity of the LiCoO₂ electrode containing 7.5 weight% carbon black is rather reduced. When the conductive material is excessively provided, an increase of electrode thickness by the low content of the LiCoO₂ active material in the same loading level of the electrode is predicted as a cause of polarization growth. When the electrode porosity increases, the path of ionic transport can be extended, but the electron conduction within the electrode is disadvantageous because the contact between the active material and the carbon black particles decreases. As the electrode porosity is lowered through the sufficient calendaring of the electrode, the electrochemical performance is improved because of the better contact between particles in the electrode and the reduced electrode thickness. In the electrode design for the high-loading, it is very important to construct the path of electron conduction as well as the ion transfer and to reduce the electrode thickness.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.