• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.159-165
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• 2021

YSZ based anode supported solid oxide fuel cells (SOFCs) were prepared, and two cells with different electrolyte thicknesses were connected in series for the simulation of a cell-imbalanced fuel cell stack. Pure YSZ cells in a series connection exhibited a rapid degradation when a thick electrolyte cell was operated under a negative voltage. On the other hand, ceria added-YSZ cells in a series connection were stable under similar operating conditions, and the power density and impedance were about the same as those before tests. The improved stability was due to the reduction of internal partial pressure in the electrolyte by locally increasing the electronic conduction. Thus, we propose a new protection method, i.e., the local addition of ceria in the YSZ electrolyte, to extend the lifetime of a cell-imbalanced SOFC stack.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korean Chemical Society
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• v.49 no.6
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• pp.560-566
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• 2005

Sintered ceramic samples of pure and some copper doped layered sodium lithium tri-titanate ($Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) materials with different dopant molar percentages (0.0$Cu^{2+}$ at $Ti^{4+}$ sites in the lattice is proposed in this paper. Furthermore, three distinct regions have been identified in log(${\sigma}_{d.c.}T$) versus 1000/T plots. The lowest temperature region is attributed to electronic hopping conduction(polaron) for all copper doped derivatives and ionic conduction for lithium substituted $Na_2Ti_3O_7$.The mechanism of conduction in the intermediate region is associated interlayer ionic conduction and in the highest temperature region is associated modified interlayer ionic conduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.34-37
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• 1992

In this paper, the $(SrPb)(CaMg)TiO_3$-xBi_2O_3{\cdot}3TiO_2$ ceramics with paraelectric properties were fabricated by the mixed oxide method. In order to investigate the behavior of charged particles, the characteristics of electrical conduction and thermally stimulated current were measured respectively. As a result on characteristics of the electrical conduction, the leakage current was increased as measuring temperature was increased. At room temperature, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to spare charge which injected from electrode, above 40[kV/cm]. Thermally stimulated currents(TSC) spectra with various biasing fields exhibited three distinguished peaks that were denoted as ${\alpha}$, ${\alpha}'$ and ${\beta}$ peak, each of which appeared at nearby -30, 20 and 95[$^{\circ}C$] respectively. It is confirmed that the a peak was due to trap electron trapped in the grainboundary, and ${\alpha}'$ peak that was observed above only 1.5[kV/mm] was attributed to field-enforced ferroelectric polarization. The origin of ${\beta}$ peak was identified as ion migration which caused the degradation.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.141.2-141.2
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• 2000

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.1126-1128
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• 2001

A single-stage high-power-factor electron ic ballast operating in critical conduction mode is presented in this paper. The proposed topology is based on integration of a boost-like converter and a LCC Type half-bridge serial resonant inverter. The power-factor-correction(PFC) stage is a boost-like converter operating in critical conduction mode for positive and negative half cycle voltage respectively at line frequency (60Hz) so that a high power factor is achieved naturally. The simulated and experimental results for 100w fluorescent lamps operating at 42kHz switching frequency and 220V line voltage have been obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.11B no.3
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• pp.104-111
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• 2001

The design procedures and experimental results of a single-stage electronic ballast using half-bridge resonant inverter are presented in this paper. The proposed topology is based on a single-stage ballast which combines a boost converter and a half-bradge series resonant inverter. High power factor is achieved by using the boost semi-stage operating in discontinuous conduction mode and inverter semi-stage operated above resonant frequency to provide zero voltage switching is empolyed to ballast the fluorescent lamp Experimental results from the ballast system with 36W fluorescent

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.7
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• pp.2570-2578
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• 2010

This paper presents a digital-controlled single-phase power-factor correction (PFC) converter operating in critical current conduction mode. The proposed converter utilizes the DC-DC boost converter topology for the PFC and operates the inductor current in critical conduction mode. Because the proposed converter is controlled digitally using a micom, its control circuit is simplified and the converter operates more effectively. This paper first explains the operational principles of the proposed converter and then analyzes the converter circuit. And this paper explains the implementation method of proposed converter with a detail design example, which is divided into software and circuit design parts. Also, it is shown through the experimental results of the prototype converter by the designed circuit parameters that the proposed converter has good performance as a single-phase PFC converter.

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.592-601
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• 2016

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a user-defined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.