• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.74-77
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• 1997

We have examined conduction properties and electrochemical properties of MCMB 6-28 and MPCF 3000. As results, electrical conductivity of carbon decreased with increasing the number of intercalated lithium ion. MCMB and MPCF showed reversible redox reaction, and the potentials of the oxidized and reduced peaks were 0.3V and 0V, respectively. First discharge capacity of MCMB was 190㎃f/g and that of MPCF was 220㎃h/g. MPCF has good properties for lithium secondary battery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1088-1091
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4'-diamine (TPD) as a hole transport and trim(8-hydroxyquinoline) alulninum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.198-201
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• 2002

We have studied the temperature dependence of current-voltage and luminance-voltage characteristics of Organic Light Emitting Diodes(OLEDs). The OLEDS are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum(III) (Alq$_3$) as an electron transport, and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a buffer layer. The current-voltage and luminance-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.658-663
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• 2002

Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.253-253
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• 2010

The Polymer/MWCNT composite films were fabricated by air-spray method under the 2 kg/$cm^2$ pressure using the multi-walled CNTs solution and the polymer on a $50{\mu}m$ kepton film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion. In order to analysis the microstructure for the fabricated Polymer/MWCNT film, we used the X-ray diffraction (XRD) and SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.706-710
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• 2008

The substrate bias effect on the current level of SOI-MOSFETs for high temperature operation has been investigated. In this work, we demonstrate the current level of SOI-MOSFETs can be controlled at different temperatures by applying a control bias to the substrate, showing that all current levels below T=150$^{\circ}C$ can be adjusted to a constant current level. 2D numerical simulation results show that substrate bias effectively controls the current conduction; as the substrate bias effectively lower the potential of the channel, inversion carrier generation is effectively controlled and consequently a constant current conduction level is achieved up to T=150$^{\circ}C$. We also demonstrate that the device simulated in this work has same operation at any temperature below T=150$^{\circ}C$ through mixed mode simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.143-146
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• 1994

In older to investigate the properties of electric conduction in low density polyethylene(LDPE) for power cable, the thickness of specimen was the 30, 100($\mu\textrm{m}$) of LDPE. The experimental condition for conductive properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and in the electric field of 1 to 5 ${\times}$10$^2$[Mv/m]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.164-168
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• 1996

The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.238-241
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• 1996

In this paper, we investigated the electrical characteristics which is d.c. and a.c. conductivity of the amorphous Te$_{80}$Se$_{10}$Sb$_{10}$thin film prepared by thermal evaporation. As the results, the d.c. conduction mechanism was followed thermally activated conduction and from the data of d.c. conductivity, the acti-vation energy and mobility gap were obtained. the d.c. conductivity was increased with temperature and a.c. conductivity also was increased with temperature and frequency. It can consider that the annealing is indispensable for higher conductivity since the activation energy decreased but d.c. and a.c. conductivity increased with annealing.aling.