Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Electrical Characteristics of Amorphous $Te_{80}Se_{10}Sb_{10}$ Thin Film

비정질$Te_{80}Se_{10}Sb_{10}$ 박막의 전기적 특성

  • 김흥석 (광운대학교 전자재료공학과) ;
  • 이영종 (여주전문대 전자과) ;
  • 정홍배 (광운대학교 전자재료공학과 광운대학교 신기술 연구소)
  • Published : 1996.11.01
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Abstract

In this paper, we investigated the electrical characteristics which is d.c. and a.c. conductivity of the amorphous Te$_{80}$Se$_{10}$Sb$_{10}$thin film prepared by thermal evaporation. As the results, the d.c. conduction mechanism was followed thermally activated conduction and from the data of d.c. conductivity, the acti-vation energy and mobility gap were obtained. the d.c. conductivity was increased with temperature and a.c. conductivity also was increased with temperature and frequency. It can consider that the annealing is indispensable for higher conductivity since the activation energy decreased but d.c. and a.c. conductivity increased with annealing.aling.

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