• Composites Research
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• v.16 no.1
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• pp.1-12
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• 2003

This study developed SiC$_{p}$/A1$_2$O$_3$$_{f}$/Al composites for electronic packaging to which reinforcements were added with the volume fractions of 49%, 56% and 63% by the squeeze casting method. 0.8 wt. % of the inorganic binder as well as the A1$_2$O$_3$ fiber and SiC Particles with the volume fraction of 1:10 were added to the composites, which were produced in the newly designed mold. For the produced SiC/Al composites, the CTEs (coefficients of thermal expansion) were measured from 30 to 300 and compared with the FEM numerical simulation to analyze the temperature dependent properties. The experiment showed the CTEs of SiC$_{p}$/A1$_2$O$_3$$_{f}$/Al composites that were intermediate values of those of Rule of Mixture and Turner's Model. The CTEs were close to Turner's Model in the room temperature and approached the Rule of Mixture as the temperature increases. These properties analyzed from the difference of the average stress acting between the matrix and the reinforcements proposed in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.17-26
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• 2009

Hydrazones of isonicotinic acid hydrazide, viz., N-isonicotinamido-furfuralaldimine (INH-FFL), N-isonicotnamido-cinnamalidine (INH-CIN) and N-isonicotnamido-3',4',5'-trimethoxybenzaldimine (INH-TMB) were prepared by reacting isonicotinic acid hydrazide with respective aromatic aldehydes, i.e., furfural, cinnamaldehyde or 3,4,5-trimethoxy-benzaldehyde. A new series of fifteen complexes of cobalt(II) with these new hydrazones, INH-FFL, INH-CIN and INH-TMB, were synthesized by their reaction with cobalt(II) salts. The infrared spectral data reveal that hydrazone ligands behave as a bidentate ligand with N, O donor sequence towards the $Co^{2+}$ ion. The complexes were characterized on the basis of elemental analysis, magnetic susceptibility, conductivity, infrared and electronic spectral measurements. Analytical data reveal that the complexes have general composition [Co($L)_2X_2]\;and\;[Co(L)_3](ClO_4)_2$ where L= INH-FFL, INH-CIN or INH-TMB and X = $Cl^-,{NO_3}-,\;NCS^-\;or\;CH_3COO^-.$ The thermal behaviour of the complexes were studied using thermogravimetrictechnique. Electronic spectral results and magnetic susceptibility measurements are consistent with the adoption of a six-coordinate geometry for the cobalt(II) chelates. The antimicrobial properties of cobalt(II) complexes and few standard drugs have revealed that the complexes have very moderate antibacterial activities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.56-56
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• 2010

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as a promising material for transparent conducting films (TCFs), due to their superior electrical conductivity, high mechanical strength, and complete flexibility as well as their one-dimensional morphological features of extremely high length-to-diameter ratios. This study investigated three kinds of SWCNTs with different purities: as-produced SWCNTs (AP-SWCNTs), thermally purified SWCNTs (TH-SWCNTs), thermally and acid purified SWCNTs (TA-SWCNTs). The purity of each SWCNT sample was assessed by considering absorption peaks in the semiconducting ($S_{22}$) and metallic ($M_{11}$) tubes with UV-Vis NIR spectroscopy and a metal content with thermogravimetric analysis (TGA). The purity increased as proceeding the purification stages from the AP-SWCNTs through the thermal purification to the acid purification. The samples containing different contents of SWCNTs were dispersed in water using sodium dodecyl benzensulfate (SDBS). Aqueous suspensions of different purities of SWCNTs were prepared to have similar absorbances in UV-Vis absorption measurements so that one can make the TCFs possess similar optical transmittances irrespective of the SWCNT purity. Transparent conductive SWCNT networks were formed by spraying an SWCNT suspension onto a poly(ethyleneterephthalate) (PET) substrate. As expected, the TCFs fabricated with AP-SWCNTs showed very high sheet resistances. Interestingly, the TH-SWCNTs gave lower sheet resistances to the TFCs than the TA-SWCNTs although the latter was of higher purity in the SWCNT content than the former. The TA-SWCNTs would be shortened in length and be more bundled by the acid purification, relative to the TH-SWCNTs. For both purified (TH, TA) samples, the subsequent nitric acid ($HNO_3$) treatment greatly lowered the sheet resistances of the TCFs, but almost eliminated the difference of sheet resistances between them. This seems to be because the electrical conductivity increased not only due to further removal of surfactants but also due to p-type doping upon the acid treatment. The doping effect was likely to overwhelm the effect of surfactant removal. Although the nitric acid treatment resulted in the similar. electrical properties to the two samples, the TCFs of TH-SWCNTs showed much lower sheet resistances than those of the TA-SWCNTs prior to the acid treatment.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.497-504
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• 2019

We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.502-507
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• 2016

Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

• Journal of the East Asian Society of Dietary Life
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• v.23 no.6
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• pp.789-798
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• 2013

In the present study, optimization on ${\beta}$-glucanase-assisted extraction was made in order to isolate waxy barley starch from domestic cultivar using the D-optimal design suitable for response surface methodology (RSM). The results demonstrated that the amount of enzyme was found to be a major influencing factor on the extraction yield, which was substantially increased by increasing the amount of enzyme. It was also influenced by the reaction time and amount of water addition; however, the two factors were less influential than the amount of enzyme. The optimized condition by RSM for the reaction time was found to be 2.63 hours and amount of enzyme 1.7%, and amount of water addition 4.38 times the weight of raw material. With the enzyme treatment, the starch content in residues (R), particularly in R1 and R5, was reduced considerably, resulting in an increase in the extraction yield and therefore primarily and effectively releasing B-type starch small granule confirmed by scanning electronic microscopy. In addition, the study determined the physicochemical properties of isolated waxy starch (i.e., purity, water adsorption capacity, thermal properties, rheology and starch morphology) and compared them with those from the enzyme-not treated sample. It was found that they were almost similar to each other, except for the purity of starch, which was lower in the enzyme-treated sample than in the enzyme-not treated one.

• Polymer(Korea)
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• v.32 no.3
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• pp.251-255
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• 2008

This study suggested antistatic material which can increase anti-static properties and mechanical strength by mixing polystyrene for conveying electronic stuffs with metal salt and ester compound as a anti-static agent. We studied about mechanical, thermal and electrical characteristics by changing the contents of MAH of poly(styrene-co-maleic anhydride), compatibilizer. As the result of measuring residue space charge of the blends of HIPS(75)/TPU(25)/poly(styrene-co-maleic anhydride)(MAH weight ratio : 25, 32, 43.5 wt%), we could find small residue charge in the blend which MAH(25 wt%) was added and it showed the highest values in tensile strength. Additionally we found out the material to which compatibilizer was added kept better anti-static properties than one to which compatibilizer was not added. In the event we could confirm that the adding of PS-co-MAH enables two polymers were mixed well when HIPS/TPU was blended and anti-static agent made easier dissipative in the blend.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.