• 소성∙가공
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• 제16권5호통권95호
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• pp.396-400
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• 2007

LTCC(Low Temperature Co-fired Ceramic) which offers a good performance to produce multilayer structures with electronic circuits and components has emerged as an attractive technology in the electronic packaging industry. In LTCC module fabrication process, the lamination and the sintering are very important processes and affect the electrical characteristics of the final products because the processes change the permittivity of ceramics and the dimension of the circuit patterns which have influences on electronic properties. This paper discusses the influence of lamination pressure and sintering temperature on the permittivity and the dimensional change of LTCC products. In the present investigation, it is shown that the permittivity increases along with increasing of the lamination pressure and the sintering temperature.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.55-60
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• 2018

Transparent conductive thin films (TCFs) are essential materials for solar cells, organic light-emitting diodes, and display panels. Indium tin oxide (ITO) is one of the most widely used commercial materials to create TCFs'; however, new materials that can possibly replace ITO at a lower cost and/or those possessing mechanical flexibility are urgently needed. Silver nanowire (AgNW) is one of those promising materials, as it is less expensive and possesses superior mechanical flexibility as compared to ITO. We used AgNW and sol-gel ZnO to fabricate composite thin films by spray coating. We propose two spray-coating methods: the 'metal-organic chemical vapor deposition (MOCVD)/AgNW' method and the Mixture method. These two methods are expected to be commercialized for high-quality and low-cost products, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.545-545
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• 2007

Recently, innovative process has been investigated in order to replace the conventional high-cost micro patterning processes on the electronic products. To produce desirable profit margins from this low cost products, printed circuit board(PCB), will require dramatic changes in the current manufacturing philosophies and processes. Innovative process using metal nano particles replaces the current industry standard of subtractive etched of copper as a highly efficient way to produce robust circuitry on low cost substrates. An advantage of using metal nano particles process in patterned conductive line manufacturing is that the process is additive. Material is only deposited in desired locations, thereby reducing the amount of chemical and material waste. Simply, it just draws on the substrate as glass epoxy or polyimide with metal nano particles. Particles, when their size becomes nano-meter scale, show some specific characteristics such as enhanced reactivity of surface atoms, decrease in melting point, high electric conductivity compared with the bulk. Melting temperature of metal gets low, the metal nano particles could be formated onto polymer substrates and sintered under $300^{\circ}C$, which would be applied in PCB. It can be getting the metal line of excellent electric conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.50-53
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• 2003

CMP (chemical mechanical polishing) process remained to solve several problems in deep sub-micron integrated circuit manufacturing process. especially consumables (polishing pad, backing film, slurry, pad conditioner), one of the most important components in the CMP system is the slurry. Among the composition of slurries (buffer solution, bulk solution, abrasive particle, oxidizer, inhibitor, suspension, antifoaming agent, dispersion agent), the abrasive particles are important in determining polish rate and planarization ability of a CMP process. However, the cost of abrasives is still very high. So, in order to reduce the high COO (cost of ownership) and COC (cost of consumables) in this paper, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size and hardness. Also, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.157-161
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• 2012

In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to $Cl_2/BCl_3$ inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the $Cl_2/BCl_3$ (4:16 sccm) plasma, which was higher than that with He or $N_2$ added to the plasma. The ion bombardment by $Ar^+$ sputtering was due to the relatively low volatility of the by-products formed in the $Cl_2/BCl_3$ (4:16 sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the $Cl_2/BCl_3$ plasma removes carbon and by-products from the surface of the etched ITO thin film.

• 전기학회논문지
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• 제62권2호
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• pp.288-292
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• 2013

This paper presents the result of life-cycle cost (LCC) estimation for domestic products propulsion control system (motor block unit) of KTX-1 considering periodic maintenance. Life cycle costing is one of the most effective approaches for the cost analysis of long-life systems such as the KTX-1. Life cycle costing includes the cost of concept design, development, manufacture, operation, maintenance and disposal. To estimate LCC for domestic products motor block unit, it was analyzed physical breakdown structure (PBS) on motor unit in view of maintenance cost and unit cost etc. As a results, life cycle cost on motor block unit increased moderately expect for periodical time when major parts are replaced at the same time. hereafter this results will be reflected in the domestic products being developed.