• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.10
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• pp.1179-1182
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• 2016

In this paper, a new method to reduce the size of ROM in the direct digital frequency synthesizer (DDFS) is proposed. This method use the sine-linear phase difference method and differential PCM. The new ROM compression method can reduce the ROM size by using the two ROM. The quantized value of sine-linear phase difference is saved by the ROM1 of the $2^N$ sample period. The ROM2 save the difference between the original sine-linear phase difference value and the saved sample value of the ROM1. The ROM compression ratio of 37% is achieved by this method. Also, the power consumption is decreased according to the ROM size reduction.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.8-16
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.408-414
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• 2014

This paper proposes a charge-pump phase-locked loop (PLL) with 51-phase output clock of a 125 MHz target frequency. The proposed PLL uses three voltage controlled oscillators (VCOs) to generate 51-phase clock and increase of maximum operating frequency. The 17 delay-cells consists of each VCO, and a resistor averaging scheme which reduces the phase mismatch among 51-phase clock combines three VCOs. The proposed PLL uses a 65 nm 1-poly 9-metal CMOS process with 1.0 V supply. The simulated peak-to-peak 지터 of output clock is 0.82 ps at an operating frequency of 125 MHz. The differential non-linearity (DNL) and integral non-linearity (INL) of the 51-phase output clock are -0.013/+0.012 LSB and -0.033/+0.041 LSB, respectively. The operating frequency range is 15 to 210 MHz. The area and power consumption of the implemented PLL are $580{\times}160{\mu}m^2$ and 3.48 mW, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.465-471
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• 2023

This paper proposes a comparator structure that improves the noise and output delay of a single-slope ADC(SS-ADC) used in CMOS Image Sensor (CIS). To improve the noise and delay characteristics of the output, a comparator structure using the miller effect is designed by inserting a capacitor between the output node of the first stage and the output node of the second stage of the comparator. The proposed comparator structure improves the noise, delay of the output, and layout area by using a small capacitor. The CDS counter used in the single slop ADC is designed using a T-filp flop and bitwise inversion circuit, which improves power consumption and speed. The single-slope ADC also performs dual CDS, which combines analog correlated double sampling (CDS) and digital CDS. By performing dual CDS, image quality is improved by reducing fixed pattern noise (FPN), reset noise, and ADC error. The single-slope ADC with the proposed comparator structure is designed in a 0.18-㎛ CMOS process.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.93-104
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• 2024

Demand response is a strategy that encourages customers to adjust their consumption patterns at times of peak demand with the aim to improve the reliability of the power grid and minimize expenses. The integration of renewable energy sources into smart grids poses significant challenges due to their intermittent and unpredictable nature. Demand response strategies, coupled with reinforcement learning techniques, have emerged as promising approaches to address these challenges and optimize grid operations where traditional methods fail to meet such kind of complex requirements. This research focuses on investigating the application of reinforcement learning algorithms in demand response for renewable energy integration. The objectives include optimizing demand-side flexibility, improving renewable energy utilization, and enhancing grid stability. The results emphasize the effectiveness of demand response strategies based on reinforcement learning in enhancing grid flexibility and facilitating the integration of renewable energy.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.375-383
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• 2011

Recent advances in digital technology and diversified internet services have resulted in a rapid growth of research on monitering systems using embedded web servers in USN systems. In designing USN systems equipped with wireless sensor modules requiring extra power for heating sensors for their appropriate operations, excessive power consumption introduces inefficiency to the entire system. In this paper, using embedded systems in web environment, we develop a remote-monitoring system with VOC (Volatile Organic Compounds) sensor signal, and propose a real time method of processing sensor-data streams by way of the serial bus from the sensor module in the USN system. The proposed system has an advantage of monitering the harmful gases on real-time basis and can be used semi-permanently by providing the sensor module with power through the serial bus. The harmful gas to be detected by the VOC sensor module is Toluene and the sensor module is composed of TGS-2602 VOC(Volatile Organic Compounds) sensors of FIGARO. The detected signal is transferred to the embedded web server using the RS-485 serial communication device. The proposed remote VOC monitering system is designed to coordinate in such a way that the VOC sensor module and embedded web server (EMPOS-II) work together effectively for real time monitering of harmful gases on the web at any places where the internet is connected.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.34-41
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• 2011

This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.