• Journal of the Korean Society of Marine Environment & Safety
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• v.18 no.5
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• pp.475-480
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• 2012

This study on the methode is easied to distinguish with emotional visual lighting on AtoN facility using 3colors LED, and which is controlled to on-off switching of approach light in shore or harbor. The identification have easied to provide a differentiation between the AtoN facility of red and white light and surrounding light in harbor both sides. And the integrated controller have designed to left-right and serial sequential lighting system for harbor guidance using the GPS synchronous or timer. There is expectation effect that is prevent a confusion about distinguish of facility by ship's operator and to beautify a night scene of harbor, which is expressed to emotional identification lighting and variable color lighting on AtoN body by vertical layer color lighting using LED. In addition, the performance of AtoN is implemented to display with guidance light the harbor safety message by morse code lighting. Effectiveness of system is enhanced that age and power consumption reduce by candle alternated high light LED.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.56-65
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• 2006

The Quantum-dot Cellular Automata (QCA) can be considered as a candidate for the next generation digital logic implementation technology due to their small feature sizes and ultra low power consumption. Up to now, several designs using Uh technology have been proposed. However, we found not all of the designs function properly. Furthermore, no general design guidelines have been proposed so far. A straightforward extension of a simple functional design pattern may fail. This makes designing a large scale circuits using QCA technology an extremely time-consuming process. In this paper, we show several critical vulnerabilities related to unbalanced input paths to QCA gates and sneak noise paths in QCA interconnect structures. In order to make up the vulnerabilities, a disciplinary guideline will be proposed. Also, we present a fast adder which has been designed by the discipline, and verified to be functional by the simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.34-43
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• 2008

An OpenLDI receiver circuit for flat-panel display systems was designed and fabricated using $1.8-{\mu}m$ high-voltage CMOS technology. Designed circuit roughly consists of DLL circuit and parallelizers, which recovers clock and parallelize data bits, respectably. It has one clock input and four data inputs. Measurement results showed that it successfully recovers clock signal from input whose frequency is $10Mhz{\sim}65Mhz$, which corresponds data rate of $70Mbps{\sim}455Mbps$ per channel, or $280Mbps{\sim}1.82Gbps$ when all of the four data channels were utilized. A commercial LCD monitor was modified into a test-bench and used for video data transmission at clock frequency of 49Mhz. In the experiment, power consumption was 19mW for core block and 82.5mW for output buffer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.58-64
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• 2008

A 6Gbps 1:2 demultiplexer(DEMUX) IC using $0.18{\mu}m$ CMOS was designed and fabricated. For high speed performance current mode logic(CML) flipflop was used and inductive peaking technology was used so as to obtain higher speed than conventional Current mode logic flipflop. On-chip spiral inductor was designed to maximize the inductive peaking effect using stack structure. Total twelve inductors of $100{\mu}m^2$ area increase was used. The measurement was processed on wafer and 1:2 demultiplexer with and without micro stacked spiral inductors were compared. For 6Gbps data rate measurement, eye width was improved 7.27% and Jitter was improved 43% respectively. Power consumption was 76.8mW and eye height was 180mV at 6 Gbps

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.899-905
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• 2017

This paper presents a reference-less dual loop clock and data recovery (CDR) circuit that supports a data rate of 2.496 Gb/s for the mobile industry processor interface (MIPI) M-PHY. An adaptive loop bandwidth scheme is used to implement the fast lock time maintaining a low time jitter. To this scheme, the proposed CDR consists of two loops for a frequency locked loop and a phase locked loop. The proposed 2.496 Gb/s reference-less dual loop CDR is designed using a 65 nm CMOS process with 1.2 V supply voltage. The simulated peak-to-peak jitter of output clock is 9.26 ps for the input data of 2.496 Gb/s pseudo-random binary sequence (PRBS) 15. The active area and power consumption of the implemented CDR are $470{\times}400{\mu}m^2$ and 6.49 mW, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.552-559
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, the advantage of ring-shaped electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The ring-shaped electrodeless lamp is intended as a high efficiency replacement for the incandescent reflector lamp in many applications. Therefore, the life time of ring-shaped electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, maxwell 3D finite element analysis program(Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by 3D simulation software operated at 250 KHz and some specific conditions. The optical characteristics were measured luminance and a temperature and an optical spectrum distribution for 10 min in a one minute interval at the same time. With a goal of finding alternative materials, we show measurement results of electrical characteristics of a ring-shaped electrodeless fluorescent lamp as a function of frequency and the number of coil turns using a highly permeable($\mu$$_{r}$(equation omitted) 2,000) Mn-Zn ferrite. These results are compared with those of conventional ring-shaped electrodeless fluorescent lamp. It is found that the resistance, inductance and impedance are increased while the quality factor decreases as frequency increases.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.10
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• pp.579-584
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• 2014

In this paper, we propose beamsapce MIMO(mulitple input multiple output) system using patch ESPAR(Electronically Steerable Parasitic Array Radiator) antenna. When using conventional monopole ESPAR antenna, we have advantages cost of hardware and power consumption of RF cirsuit because of single RF chian. But it is difficult to apply to small portable mobile device. Therefore we design patch ESPAR antenna in order to reducing volume and analyze performance of BS MIMO system that is able to MIMO communication with single RF chain. In This paper, we confirm beam pattern of designed patch ESPAR antenna is steered as ${\pm}15^{\circ}$ elevation angle. Furthermore, we design BS MIMO system using this ESPAR antenna and confirm BER performance of this system.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.276-279
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• 2005

Influences of sustain pulse-width on electrical characteristics and luminous efficiency are experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and fixed rising time of 300 ns has been used in the experiment. It is found that the memory coefficient is significantly increased at the critical pulse-width. And the wall charges and wall voltages as well as capacitances are experimentally measured by Q- V analysis method along with the voltage margin relation, in terms of the sustain pulse-width in the range of $1{\mu}s$ to $5{\mu}s$ under driving frequency of 10 kHz to 180 kHz. And the luminous efficiency is also experimentally investigated in above range of sustain pulse-width with driving frequency of 10 kHz to 180 kHz. It is noted that the luminous efficiency for 10 kHz and 180 kHz are 1.29 1m/W and 0.68 1m/W respectively, since the power consumption for 10 kHz is much less than that for 180 kHz. It has been concluded that the optimal sustain pulse-width is in the range of $2.5 {\~}4.5{\mu}s$ under driving frequency range of 10 kHz and 60 kHz, and in the range of $1.5 {\~} 2.5{\mu}s$ under driving frequency range of 120 kHz and 180 kHz based on observation of memory coefficient, and wall voltage as well as luminous efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.