• Title/Summary/Keyword: Electronic Power Consumption

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The Design of Fuse in High Efficient Inverter Control System using Ceramic Radiant Heat and Metal Film Laminated Plating (세라믹 방열과 박막 적층 도금을 이용한 고효율 인버터 제어 회로용 퓨즈 설계)

  • Kim, Eun-Min;Kim, Shin-Hyo;Cho, Dae-Kweon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.11
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    • pp.1538-1544
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    • 2014
  • In recent years, The electronic and energy industries demand low power consumption and high efficiency, so under their demands, the white goods industries which are represented for refrigerator and air conditioner system be implemented energy-saving power suppling structure with inverter control system. As inverter control system is different from step control type, when switching system is optimizing temperature control during short period, the inrush plus current can be flown in the circuit. In despite of these characteristics, there is no fuse which can be applied to this type until now. For this reason, we suggest the method of manufacturing protector in the high efficient inverter control system using the alumina-based ceramic radiated heat characteristics and metal films laminated plating. And through the evaluating electrical characteristics, we make a possible to utilize the method when designing overall fuses.

A New Routing Algorithm for Performance improvement of Wireless Sensor Networks (무선 센서 네트워크의 성능 향상을 위한 새로운 라우팅 알고리즘)

  • Yang, Hyun-Suk;Kim, Do-Hyung;Park, Joon-Yeol;Lee, Tae-Bong
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.49 no.1
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    • pp.39-45
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    • 2012
  • In this paper, a distributed 2-hop routing algorithm is proposed. The main purpose of the proposed algorithm is to reduce the overall power consumption of each sensor node so that the lifetime of WSN(wireless sensor network) is prolonged. At the beginning of each round, the base station transmits a synchronization signal that contains information on the priority table that is used to decide whether each sensor node is elected as a cluster head or not. The priority table is constructed so that sensor nodes closer to half energy distance from the base station get the higher priority. 2-hop routing is done as follows. Cluster heads inside half energy distance from the base station communicate with the base station directly. Those outside half energy distance have to decide whether they choose 2-hop routing or 1-hop routing. To do this, each cluster head outside half energy distance calculates the energy consumption needed to communicate with the base station via 1-level cluster head or directly. If less energy is needed when passing through the 1-level cluster head, 2-hop routing is chosen and if not, 1-hop routing is chosen. After routing is done each sensor nodes start sensing data.

Ultra-Power-Saving 2 Ports PLC Wall Switch Development (초절전형 PLC 2구 스위치 개발)

  • Han, Jae-Yong;Lee, Sun-Heum
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.51-55
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    • 2007
  • Generally, PLC (Power Line Communication) based home automation devices such as wall switch, walt socket, gas controller, etc, must maintain wake-up status at all time to control other electronic devices and monitor their on/off status whether they are in service or not. In order to reduce the unnecessary energy consumption during the standby mode, the new power-saving PLC 2 ports wall switch has been developed, separating PLC communication part and controller part and introducing sleep mode. In addition, to expand life cycle of PLC product and to reduce the rate of product failure in active mode, the instant controlling method in controlling process is adopted instead of the maintenance controlling method. In comparison to the earlier model, the new 2 ports PLC wall switch has reduced power by 0.95[W] less in standby mode and 3.2[W] less in active mode than the previous one.

Comparative Analysis of Wind Power Energy Potential at Two Coastal Locations in Bangladesh

  • Islam, Asif;Rahman, Mohammad Mahmudur;Islam, Mohammad Shariful;Bhattacharya, Satya Sundar;Kim, Ki-Hyun
    • Asian Journal of Atmospheric Environment
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    • v.9 no.4
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    • pp.288-297
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    • 2015
  • In this study, wind conditions and its energy potential have been assessed by conducting a Weibull analysis of the wind speed data (over the period of 2002-2011) measured from a port city (Mongla) and an isolated island (Sandwip) in Bangladesh. The monthly mean wind speed at Mongla ranged from 1.60 m/s (December) to 2.47 m/s (April). The monthly values of Weibull shape parameter (k) were from 1.27 to 2.53. In addition, the values of the scale parameter (c) and the monthly wind power density ranged from 1.76 to 2.79 m/s and 3.95 to $17.45W/m^2$, respectively. The seasonal mean wind speed data varied from 1.72 (fall) to 2.29 m/s (spring) with the wind power density from 5.33 (fall) to $14.26W/m^2$ (spring). In the case of Sandwip, the results were comparable to those of Mongla, but moderate reductions in all the comparable variables were observed. The wind data results of these two areas have been compared with those of eight other locations in the world with respect to wind power generation scale. According to this comparison, the wind power generation scale for Mongla and Sandwip was adequate for stand-alone small/micro-scale applications such as local household consumption, solar-wind hybrid irrigation pumps, and battery charging.

The Improvement for Performance of White LED chip using Improved Fabrication Process (제조 공정의 개선을 통한 백색 LED 칩의 성능 개선)

  • Ryu, Jang-Ryeol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.1
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    • pp.329-332
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    • 2012
  • LEDs are using widely in a field of illumination, LCD LED backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. To achieve high performance LEDs, one needs to enhance output power, reduce operation voltage, and improve device reliability. In this paper, we have proposed that the optimum design and specialized process could improve the performance of LED chip. It was showed an output power of 7cd and input supplied voltage of 3.2V by the insertion technique of current blocking layer. In this paper, GaN-based LED chip which is built on the sapphire epi-wafer by selective MOCVD were designed and developed. After that, their performances were measured. It showed the output power of 7cd more than conventional GaN-based chip. It will be used the lighting source of a medical equipment and LCD LED TV with GaN-based LED chip.

Effect of Alternator Control on Vehicle Fuel Economy (교류발전기 충전 제어에 따른 차량연비 개선 효과)

  • Cho, Guen-Jin;Wi, Hyo-Seong;Lee, Jong-Hwa;Park, Jin-Il;Park, Kyoung-Seok
    • Transactions of the Korean Society of Automotive Engineers
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    • v.17 no.2
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    • pp.20-25
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    • 2009
  • For many years there has been a trend to increased electrical energy consumption in cars caused by the replacement of mechanical parts by electronic or mechanical devices as well as the introduction of new electronic features. Whereas the number of electrical consumers continues to increase, the battery is still the only passive power source available. Because of this reason, needs for driving power of the engine accessories such as alternator system have increased. Usually, conventional alternator system is directly driven by the crankshaft of engine with belt. Since this increase bring about additional fuel economy. To improve this system automobile makers develops new controled alternator system. This paper focuses on fuel economy improvement according to control of alternator. In this paper, researches are performed on effect of type of Alternator system on fuel economy by experiment. And it is also calculated the effect on vehicle fuel economy using computer simulation with AVL cruise software. As a result, 0.64% of vehicle fuel economy improvement can be achieved in a vehicle with controled Alternator system compared to a vehicle with conventional Alternator system in NEDC mode.

The Fabrication by using Surface MEMS of 3C-SiC Micro-heaters and RTD Sensors and their Resultant Properties

  • Noh, Sang-Soo;Seo, Jeong-Hwan;Lee, Eung-Ahn
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.4
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    • pp.131-134
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    • 2009
  • The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

Etching Property of the TaN Thin Film using an Inductively Coupled Plasma (유도결합플라즈마를 이용한 TaN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.104-104
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    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

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Current Transfer Structure based Current Memory using Support MOS Capacitor (Support MOS Capacitor를 이용한 Current Transfer 구조의 전류 메모리 회로)

  • Kim, Hyung-Min;Park, So-Youn;Lee, Daniel-Juhun;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.487-494
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    • 2020
  • In this paper, we propose a current memory circuit design that reduces static power consumption and maximizes the advantages of current mode signal processing. The proposed current memory circuit minimizes the problem in which the current transfer error increases as the data transfer time increases due to clock-feedthrough and charge-injection of the existing current memory circuit. The proposed circuit is designed to insert a support MOS capacitor that maximizes the Miller effect in the current transfer structure capable of low-power operation. As a result, it shows the improved current transfer error according to the memory time. From the experimental results of the chip, manufactured with MagnaChip / SK Hynix 0.35 process, it was verified that the current transfer error, according to the memory time, reduced to 5% or less.

A Design of 40GHz CMOS VCO (Voltage Controlled Oscillator) for High Speed Communication System (고속 통신 시스템을 위한 40GHz CMOS 전압 제어 발진기의 설계)

  • Lee, Jongsuk;Moon, Yong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.55-60
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    • 2014
  • For an high speed communication, a 40GHz VCO was implemented using a 0.11um standard CMOS technology. The mm-wave VCO was designed by a LC type using a spiral inductor, and a simplified architecture with buffers and a smart biasing technique were used to get a high performance. The frequency range of the proposed VCO is 34~40GHz which is suitable for mm-Wave communication system. It has an output power of -16dBm and 16% tuning range. And the phase noise is -100.33dBc/Hz at 1MHz offset at 38GHz fundamental frequency. The total power consumption of VCO including PADs is 16.8mW with 1.2V supply voltage. The VCO achieves the FOMT of -183.8dBc/Hz which is better than previous VOCs.