• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.602-604
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• 2004

NPB surface morphologies deposited on different temperature substrates were investigated using atomic force microscopy(AFM). It has been found that the NPB morphology turned from island morphology at high temperature(100$^{\circ}C$) to grain morphology at room temperature. To characterize the effect of NPB surface morphology, the devices with the structure of Glass/ITO/NPB/$Alq_3$/Al were fabricated using NPB films deposited at different substrate temperature and their performances were compared.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.844-847
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• 2002

In this paper, a location system with Biuetooth is proposed. By using this system we can look up the position of the Bluetooth terminal in a room. In addition, the range of retrieval is accurate because the communication range of the Bluetooth terminal is about l0m radius. The position of the terminal can be always grasped so that the system is available for the security service, the positional infomation service and tracking service.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.58-61
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• 2009

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

• International Journal of Advanced Culture Technology
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• v.4 no.1
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• pp.37-50
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• 2016

In recent years, the development and application of green energy resources have attracted more and more /$^*$ 'tention of people. The training room presented here is focused on the terminal applications of a photovoltaic power generation system (PPGS). Through introducing the composition and the general design principles, we aimed at leading the students to master the fundamental skills required for its design, installation and construction. The training room consists of numerous platforms, such as: PPGS, Wind and Photovoltaic Hybrid Power Generation Systems, Wind Power Generation Equipments, Simulative Grid-Connected Power Generation System, Electronic Technology Application of New Energy, etc. This enables the students to obtain their project and professional skills training via assembling, adjusting, maintaining and inspecting, etc., various component parts of the photovoltaic and new energy power generation systems, to further grasp the fundamental and related theoretical knowledge, and to further reinforce their practical and operational skills, so as to improve their problem-analyzing and problem-solving abilities.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.331-331
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• 2008

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by RF magnetron sputtering on Si substrate at room temperature with application of substrate bias from -60 to 60 V. Then annealed at temperature of 200, 300 and $400^{\circ}C$ for 1hr in $H_2$ ambient. Structural and electrical property of AZO thin films were investigated.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.51-54
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• 2004

In this paper, the thermal and mechanical properties of elastic epoxy for the application of high voltage products were investigated. Glass transition temperature (Tg) of elastic epoxies cannot be found from room temperature to 20$0^{\circ}C$ by DSC (Differential Scanning Calorimetry). Weight reduction occurred at 285$^{\circ}C$ and 451$^{\circ}C$ according to a thermogravimeter. The first temperature was affected by addictives and the second by epoxies characteristic. Maximum tensile strain showed 28.3kgf/$\textrm{cm}^2$/$\textrm{cm}^2$ at 20% of mechanical stress in addictives 35 (phr). The SEM (Scanning electron microscope) micrograph of the fracture surface observed void and tearing of elastic epoxy at addictives 35 (phr). On the other side, the SEM micrograph of the rigid epoxy showed a broken trace.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.271-275
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• 2006

Al oped zinc oxide (AZO) films were prepared by Facing Targets Sputtering (FTS) system for TCO applications. The electrical, optical and structural properties of AZO thin films have been investigated with input current, oxygen gas flow ratio and substrate temperature. Deposition was carried out at room temperature and $200^{\circ}C$. Working gas pressures were fixed at 1mTorr. As a result, AZO thin film deposited with an optical transmittance over 80 % and a resistivity about $10^{-4}{Omega}{\cdot}cm$.