• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.252-252
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• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.21 no.10
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• pp.564-574
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• 2009

The study is conducted to study a new, optimum and new and renewable energy application method that can cover the minimum energy and operation costs within a range of school budgets. By deriving the optimum application method, it is expected to maximize the cooling/heating and hot water supply energy saving efficiencies for educational facilities. Therefore, this research implemented a study on the new and renewable energy utilization technique diffusion expansion method and the optimum method. As a result, the first optimum plan was introduced with the multi-type geothermal heat pump 475.6 kW+highly efficient electronic cooling/heating device(EHP) 545.2 kW. On the other hand, the second optimum plan was induced as the multi-type geothermal heat pump 261kW+solar heat collector $240\;m^2$+highly efficient electronic cooling/heating device(EHP) 759.8 kW.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.104-106
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• 1995

A curious resistivity anomaly in high curie point barium-lead-titanate materials with positive temerature coefficient of resistivity (PTCR) has been observed just below the curie point, besides the normal PTCR anomaly. The additional resistivity anomaly was observed in the resistivity-temperature characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.147-148
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• 2000

Sealing of two glass plates composing of FED panel was done in a vacuum chamber. Several factors related with a heating process of a frit glass were investigated, including comparisons with a conventional method.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.527-533
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• 1994

In this study, it was studied on dielectric breakdown strength and thennostability properties due to the structure variation of matrix resin and treatment of coupling agent of epoxy insulating materials. The interpenetrating network structure was formed by simultaneous heating curing the epoxy resin with single network structure and the methacrylic acid resin. Also inner structure was observed and the glass transition temperature was measured on these three type specimens. Dielectric breakdown properties were investigated by applying DC, AC and impulse voltage. As a result, the glass transition temperature and the dielectric breakdown strength of specimen with interpenetrating network structure was more higher than another two type specimens.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.160-161
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• 2006

To Improve the mean-life and the reliability of power cable, we have investigated thermal conductivity of XLPE insulator and semiconducting materials in l54[kV] underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Thermal conductivity were measured by Nano Flash Diffusivity thermal conductivity measurement temperature ranges of XLPE insulator were from 20[$^{\circ}C$] to 90[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/mm]. In case of semiconducting materials. the measurement temperature ranges of thermal conductivity were from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.731-735
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• 2002

Electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure on the poly［4- (fluorocinnamate) phenylmaleimide](PFCPMI) surfaces using a new photodimerization method were investigated. For a new UVLPH (UV linearly polarized during heating) photodimerization method, the photopolymer layers were exposed by linearly polarized UV dichroic polarizer without a specific UV filter during heating at $150^{\circ}C$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN-LCD with UV exposure on the PFCPMI surface for 10 min using the UVLPH photodimerization method was observed. For response time measurement, the transmittance characteristics of the photoaligned TN-LCD using the UVLPH photodimerization method on the photopolymer surface was better than that of the photoaligned TN-LCD using the UVLP photodimerization method under a room temperature.