• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• Proceedings of the KIPE Conference
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• 2003.11a
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• pp.218-221
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• 2003

국내 난방 시스템은 대부분 화석에너지를 열원으로 하는 온수순환방식이다. 화석에너지를 사용하기 때문에 난방 시스템 가동에서 발생되는 공해는 대기-오염의 여러 원인 중 하나이며 가동 효율도 떨어진다. 이러한 단점들을 보완하기 위하여 새롭게 보급되고 있는 난방 시스템 중 히프파이프를 이용한 난방시스템은 전기에너지를 열원으로 사용하는 청정에너지로서 기존 난방시스템 보다 $40\%$의 에너지 절감 효과를 나타내고 있다. 본 논문은 전기에너지를 사용하는 히팅 시스템의 제어를 위하여 개발된 컨트롤러에 관한 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.81-84
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• 2001

The effect of silver oxide (14 wt.%) addition to YBCO compounds and electrophoretic deposition of composite particles prepared by solid phase reaction have been investigated. The results were compared with those for as-processed samples with YBCO films on Ag wire substrate. Our experiments show that the adhesion, microstructure changes, superconducting properties of these films is sensitive to the silver content and sintering conditions. Adding a small amount of PEG tends to remove cracks in the YBCO and (YBCO + Ag) films, which develop during the heating process. An attempt has been made to explain the experimental observations regarding variation of critical current density with the YBCO and (YBCO + Ag) films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.63-64
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• 2005

CdS thin films were fabricated by rf magnetron sputter technique, and annealed in tube furnace using vacuum evaporated $CdCl_2$ layer, In addition, effects of the thickness of $CdCl_2$ layer and the annealing temperature on structural and optical properties of CdS films were investigated. The heat treatment process was carried out by heating the sample in air at $350-500^{\circ}C$ for 20 minute.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.895-900
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• 1997

A Quench in cable-in-conduit (CIC) conductors is often initiated by a disturbance such as strand motion that generates a highly localized normal zone in a strand or a few strands of the CIC conductors. The localized normal zone causes current and heat transfer between a disturbed strand and neighboring strands. Electrical and thermal contact characteristics between strands thus have an effect on the transient stability of the CIC conductors. In this paper the effect of contact characteristics between strands on the CIC conductor stability is presented based on the measured heat transfer characteristics of supercritical helium (SHe) for the local heating. The quench and recovery processes of the strands for the abrupt and highly localized disturbance are analyzed at the boundary between quench and recovery.

• Proceedings of the KWS Conference
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• 2003.05a
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• pp.224-227
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• 2003

The longitudinal thermosonic bonding method is investigated in this work for its application to the soldering process for electronic packaging. The effect of the ultrasonic is analyzed through lumped modeling, and the material properties of a viscoelastic model are measured experimentally. The thermosonic bonding method is verified by inserting the Cu pin and Au bump into solder block. As the solder thickness decreases, temperature of the solder is calculated to increase rapidly because of larger strain. Localized heating due to ultrasonic vibration is observed to melt the solder near the pin, which is adequate to the high density electronic package and Pb-free solder having high melting temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.369-372
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• 1996

We prepared LiMn$_2$O$_4$ by reacting stoichiometric mixture of LiOH.$H_2O$ and MnO$_2$ (mole ratio 1 : 1) and heating at 80$0^{\circ}C$ for 24h, 36h, 48h, 60h and 70h. We obtained through X-ray diffraction that lattice parameter varied as function of heat treatment time. heated cathode active materials at 80$0^{\circ}C$ for 36h, (111)/(311) peak ratio was 0.37. It expected good charge/discharge characteristics. When (111)/(311) peak ratio was 0.37, it will be that crystal structure is farmed very well. In the result of charge/discharge test When heated at 80$0^{\circ}C$ for 36h, charge/discharge characteristic of LiMn$_2$O$_4$is the most property. It agree with our expectation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.629-633
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• 2001

Electrical properties of the $\alpha$-In$_2$Se$_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $\alpha$-In$_2$Se$_3$ single crystal has ' the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in c-axis. The transition temperatures of the stoichiometric $\alpha$-In$_2$Se$_3$ single crystal is 198.8$^{\circ}C$ according to the specimens. The temperature of $\alpha$longrightarrow$\beta$ phase transition decreased but the temperature of $\beta$longrightarrow$\alpha$ phase transition increased as the number of heating-cooling cycle increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.