• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.591-596
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• 2004

In this paper, a photonic RF true-time delay based on a partially side-polished fiber Bragg grating with heating electrode has been proposed and fabricated. It features continuous voltage-controlled operation, requiring no mechanical perturbation and no moving parts. For an RF signal carried over an optical signal, the time delay has been obtained by controlling the voltage applied to the electrode and thus adjusting its reflection positions from the fiber grating via the thermooptic effect. The achieved time delay is about 100 ps with the electrical power consumption of 280 mW.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.157-161
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• 2000

The electronic ballasts for low pressure discharge lamps are produced and commercialized. However, the electronic ballasts for high pressure lamps are now in progress because of poor reliability and high cost. The major case of troubles with electronic ballasts are thermal destruction of semiconductor output switches due to non ideal i-v characteristics of switch. The loss converts to heat and rises the temperature of switch and it increases proportionally to switching frequency and value of current and voltage. This study shows the variable frequency ballasts which can suppress the heating of switches efficiently. It is used for the limitation the switch current and the rising temperature of switch by impedance variation of lamp inductor. As a result, initial warm-up time of the proposed ballasts was faster than that of magnetic ballasts about 90 msec. Power factor of tested ballasts follow as ; input and output average of magnetic ballasts are 93 [%] and 86 [%], respectively, And proposed ballasts are 97 [%] and 99 [%], respectively.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.2
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• pp.305-311
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• 2003

This Paper Presents an information about the heat transfer characteristics of a separate type thermosyphon in electronic equipments. The heat removal problem of electronic equipments is regarded as an important factor and a separate type heatpipes can be utilized as a cooling device of electronic equipments (such as CPU of a Personal computer or notebook). In this study. heat source ($50\times50\times2 mm $aluminum Pseudo CPU) was used for the experiment. The device can transfer heat from the evaporator to the condenser through natural circulation (without any external driving forces) and the results indicate that the device is capable of dissipating over 60W of thermal energy and keeping the heating plate surface temperature under $50^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2537-2540
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• 2001

The purpose of this study is to examine the calculated method of loss characteristics of full-bridge eletronic ballast for 250Watt HID lamps by approximated modeling. These lamps have the most emit effiency and color rendering. Especially, the majority of losses appear to the MOSFET do full-bridge, L of output terminal and driver IC, besides losses occur to the R in the ballast. These losses cause heating and breakage of MOSFET. When HID-lamp arrivals the steady-state, loss of ballast is measured 9% and analyzed value is 8% approximately. Accordingly it is not too much to say that greater part of losses is examined.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.93-94
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• 2014

Recently, According to increase of power demand, it was increased a demand that switching power supply have characteristic of low-loss and high-efficiency. So increase of using device, the failure rate increases and service life problem arises. Even though normal circuit protection is applied in designing stage, it is often hard to identify the cause of malfunction in certain cases such as fatigued power supply due to over-running, malfunctions of main elements or over heating. This report will cover experimental results with the prototype we made, that monitors the efficiency of switching power supply and that protects a circuit when it drops below the standard value.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• Journal of the Korean Solar Energy Society
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• v.32 no.5
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• pp.102-107
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• 2012

Halogen lamp was applied to fabricate the selective emitter crystalline silicon solar cell. In selective emitter structure, the recombination of minority carriers is reduced with heavily doped emitter under metal grid, consequently improving the conversion efficiency. Laser selective emitter process which is recently used the most generally induces the damage on the silicon surface. However the lamp has enough heat to form heavily doped emitter layer by diffusing phosphorus from PSG without surface damage. In this work, we have studied to find the design and the suitable condition for halogen lamp such as power, time, temperature and figured out the possibility to fabricate the selective emitter silicon solar cell by lamp heating. The sheet resistance with $100{\Omega}/{\Box}$ was lower to $50{\Omega}/{\Box}$ after halogen lamp treatment. Heat transfer to lightly doped emitter region was blocked by using the shadow mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.43-46
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• 1989

Epoxy, noticed as a new insulation material for electrical equipments, may become an excellent cured material from the crosslink reaction with some curing agents and accelerators. The characteristics of cured epoxy is determined by the method of lattice formation according to curing method. The purpose of this paper, varing the process of lattice formation by various surrounding temperatures and heating time during the curing process, is to obtain the optimum cured condition for electrical insulation from the results of investigation on the physical and dielectric properties of cured epoxy. In this investigation, it is found that the excessive temperature and heating time brings on the growth of metamorphic methyl and the insulating properties of cured epoxy is decreased by this phenomenon. As a result, it is concluded that the optimum dielectric characteristics can be obtained when cured at a curing temperature at 14$0^{\circ}C$ for one hour.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.