• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.89-96
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• 2005

To improve the mean-life and reliability of power cables, we have investigated the volume resistivity and thermal properties demonstrated by changing the content of carbon black, an additive of the semiconductive shield for underground power transmission. Nine specimens were made of sheet form for measurement. Volume resistivity of the specimens was measured by a volume resistivity meter after 10 minutes in a preheated oven at temperatures of both 25$\pm$1[$^{\circ}C$] and 90$\pm$ 1[$^{\circ}C$]. As well, specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. From these experimental results, volume resistivity was high according to an increase of the content of carbon black. Specific heat was decreased, while thermal conductivity was increased according to a rise in the content of carbon black. Furthermore, both specific heat and thermal conductivity were increased by heating temperature because the volume of materials was expanded according to a rise in temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.5
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• pp.623-628
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• 2015

As the current heating control of the greenhouse is located in specifically designed place, there is an inevitable difference in degrees depending on the latitude in it. Even though it is necessary to maintain the proper temperature in the greenhouse producing vegetables and fruit plants, the difference between ups and downs in the facilities results in the increasing energy consumption to both warm and cool down the facilities. The newest heating method, automatic control system of vertical agitation heater, which manipulates the inner air circulation efficiently, is suggested in this paper. The proposed system utilizes both the upper temperature and the lower temperature, and controls the air circulation fan and heating independently, so that maximizes the efficiency of heating with the minimum energy and implements predictable planning of farm products.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.320-326
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• 2019

Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.6
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• pp.645-650
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• 2010

In this research, the problem of combustion and its system in Hyundai Heavy Industries and Sachuan Unison will be analyzed in order to provide some methods of thermal efficiency improvement and help to make a positive influence on fuel savings and their productivity. In forging industries, in order to improve the material properties of the industrial heating elements which are being used, depending on different operation conditions of system equipment and combustion systems, fuel consumption and material properties can get a profound influence. Thus, analyzing about combustion system characteristics of 100 tons heating furnace and heat treatment furnace which are in operation in Hyundai Heavy Industry will be done. In usual, air-fuel ratio is proper for capacity of burner installed in each heating device, otherwise burner gets an automatic turn down ratio. It has a profound influence on heating performance and precision of temperature because it is the fixed characteristics of every industrial furnace. Even if there are some methods to improve the heating performance of a furnace installed with a large capacity burner, it is very difficult to obtain the precision of temperature in maintenance interval. Based on this, performance of burner can be drove to best by improving combustion system. Proper Combustion characteristic for each heating interval was analyzed in heating furnace in Hyundai Heavy Industry. A project plan for improving fuel savings and increasing precision of temperature was presented in this research.

• Design & Manufacturing
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• v.12 no.1
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• pp.31-35
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• 2018

The peltier thermoelectric module are used to cool the heat generated by electronic equipment. In order to increase the efficiency of the peltier thermoelectric module, the heat must be released to the outside. A heat sink is used to discharge such heat to the outside. in this paper, two types of heat sinks with internal tunnels were designed. And the heating and cooling performance of the heat sink with internal tunnel structure was compared and analyzed through ANSYS. The heat sink of the A type had better heat transfer than the heat sink of the B type. Which is about 70% improved.

• Journal of Korean Institute of Fire Investigation
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• v.8 no.1
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• pp.41-48
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• 2006

The purpose of this study is to identify the fire danger of the electric radiant heating system and check the way how to use it and the problems that could be possible through a actual case. We carry out an experiment to identify the possibility of the fire in the similar condition of the actual fire case. The results of this study are as follows. It is a possible condition to fire if the air blast of the electric radiant heating system is blocked by some combustible materials such as plastic bags continuously. A temperature sensor and a residual current device are necessary to disconnect the power source. It is also necessary to attach a notice in front of the electric radiant hearing system that shows users the fire danger to forbid the possible fire. Fires could be happened by internal defects of the electronic products. However, we can also find many external reasons to happen fires. Therefore, we need to check all reasons to make fires in the scene of a fire.