Fig. 1. Discharge device formation flow.
Fig. 2. Schematic structure of discharge device.
Fig. 3. Schematic structure of device plasma discharge characteristic and ozone concentration evaluation.
Fig. 6. Variation of contact angle with voltage and temperature.
Fig. 4. (a) Ozone concentration with time and flow rate of Ar gas, (b) UV spectrum with flow rate of Ar gas, (c) ozone spectrum with flow rate of Ar flow, and (d) Ar spectrum with flow rate of Ar gas.
Fig. 5. (a) Ozone concentration with time and flow rate of Ar gas at 100℃, (b) ozone concentration with flow rate of Ar gas and temperature, (c) UV spectrum with temperature at 100 sccm of Ar gas flow rate, and (d) ozone spectrum with temperature at 100 sccm of Ar gas flow rate.
Table 1. Discharge condition of device.
Table 2. Condition of plasma treatment.
Table 3. Photo of droplet shape with discharge voltage and heat.
References
- I. H. Won, S. K. Kang, J. Y. Sim, and J. K. Lee, IEEE Trans. Plasma Sci., 42, 2788 (2014). [DOI: https://doi.org/10.1109/tps.2014.2320266]
- K. H. Song, Y. S. Ko, and W. C. Lee, J. Korean Inst. Electr. Electron. Mater. Eng., 9, 1427 (2014). [DOI: https://doi.org/10.13067/jkiecs.2014.9.12.1427]
- H. H. Son and W. G. Lee, Appl. Chem. Eng., 22, 261 (2011).
- W. Y. Lee, D. J. Jin, Y. J. Kim, G. H. Han, H. K. Yu, H. C. Kim, S. W. Jin, J. H. Koo, D. Y. Kim, and G. Cho, J. Korean Vac. Soc., 22, 111 (2013). [DOI: https://doi.org/10.5757/JKVS.2013.22.3.111]
- J. S. Kim, H. Jee, and H. W. Seo, New Phys.: Sae Mulli, 67, 1399 (2017). [DOI: https://doi.org/10.3938/NPSM.67.1399]
- S. B. Han, S. S. Park, J. H. Kim, and J. Y. Park, J. Korean Inst. Illum. Electr. Install. Eng., 27, 45 (2013). [DOI: https://doi.org/10.5207/JIEIE.2013.27.7.045]
- S. J. Lee and J. T. Lee, Inst. Electron. Info. Eng., 2016, 920 (2016).
- B. J. Chun, S. K. Lee, M. F. Rahman, D. H. Lee, W. Z. Park, and K. S. Lee, J. Elec. Eng. Technol., 1999, 2004 (1999).
- S. W. Hwang, H. J. Lee, and H. J. Lee, J. Korean Vac. Soc., 20, 258 (2011). [DOI: https://doi.org/10.5757/JKVS.2011.20.4.258]
- C. J. Lee, S. K. Lee, G. H. Park, and B. M. Kim, Trans. Korean Soc. Mech. Eng. A, 32, 354 (2008). [DOI:https://doi.org/10.3795/KSME-A.2008.32.4.354]
- P. G. Reyes, E. F. Mendez, D. Osorio-Gonzalez, F. Castillo, and H. Martinez, Phys. Status Solidi C, 5, 907 (2008). [DOI:https://doi.org/10.1002/pssc.200778306]
- S. J. Cho, C. K. Jung, S. S. Kim, and J. H. Boo, Appl. Sci. Converg. Technol., 19, 22 (2010). [DOI: https://doi.org/10.5757/JKVS.2010.19.1.022]