• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.358-360
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• 2001

In this study, the bis(8-oxyquinolino)zinc II (Znq$_2$) were synthesized successfully from zinc chloride (ZnC1$_2$) as a initial material. Then, we fabricated red organic electroluminescent device with a dye (DCJTB)-doped and inserted Znq$_2$ between emission layer and cathode layer for increasing EL efficiency. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl) -1,1'-diphenyl-4,4'- diamine(TPD), and the host material of emission layer is Znq$_2$. And we study the electrical and optical properties of devices. We found that the device using Znq$_2$ inserting layer result in the increased efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.17-20
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• 1998

Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.968-971
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• 2002

Hole injection characteristics have been investigated with various metal anodes such as Ni, Pt, Cu, and AI for the top emission polymer light emitting diodes (PLEDs). Devices were composed of metal anode, Poly(3,4-ethylenedioxythiophene) doped with polystyrene sultponated acid (PEDT:PSS), poly [2-methoxy-5-(2-ethylhexyoxy)-1,4-phenylene-vinylene] (MEH-PPV) and Al cathode. The hole injection from ITO anode has been also investigated for the comparison. The I-V characteristics of the PLEDs with different metal anodes were measured. The work function of the anode is strongly related to the hole injection of the device. The current density of the device with Ni anode with higher work function was higher than that of the device with ITO or AI anode at the same operating voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.980-983
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• 2002

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.984-987
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• 2002

In this study, It is to synthesize PPV-copolymer and to make polymer electroluminesence device in single layer of ITO/PPV -copolymer/metal. and then it has been realized basic characteristics for display device through analysis and recognized application possibility by luminous material. PPV-copolymer is used spin coating method and electrode is evaporated of vacuum deposition method by changing materials. The result of experiment, The PPV-copolymer used this study emitted blue color, could be discovered a change of emttion characteristic by electrode material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.42-46
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• 2012

We have developed a fluorescence optical detection system using a digital micromirror device (DMD) for monitoring 3D cell culture matrices in situ. Full 3D imaging with fast scanning speed was implemented by the combined action of a DMD and a motorized stage. Imaging results with fluorescent microbeads measure the minimum axial resolution of the system as $6.3{\mu}m$, while full 1-mm scanning through 3D alginate-based matrix was demonstrated. For cell imaging, improved images were obtained by removing background fluorescence although the scanning distance was reduced because of low intracellular fluorescence efficiency. The system is expected to be useful to study various dynamics and behaviors of 3-dimensionally cultured cells in microfluidic systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1405-1414
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• 2014

The office management service platform configured with office's sensor devices, G/DSCL(Gateway/Device Service Capability Layer), NSCL(Network Service Capability Layer), and NA(Network Application). In this paper, we designed gateway resource tree and service scenario to fit the office management service and demonstrated appropriate operation of the office management service through intelligent functional modeling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.667-674
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• 2005

In this paper the gate overlap length of the LDMOST is optimized for obtaining longer device lifetime. The LDMOSI device with drift region is fabricated using the $0.25\;{\mu}m$ CMOS Process. The gate overlap lengths on drift region are $0.1\;{\mu}m,\;0.4\;{\mu}m\;0.8\;{\mu}m\;and\;1.1\;{\mu}m$, respectively. The breakdown voltages, on-resistances and hot-carrier degradations of the fabricated LDMOST devices are characterized. The LDMOST device with gate overlap length of $0.4\;{\mu}m$ showed the longest on-resistance lifetime, 0.02 years and breakdown voltage of 22 V and on-resistance of $23\;m\Omega{\cdot}mm^2$.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1255-1257
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• 1998

In this study,$ 5{\times}5$ dot-matrix display was implemented with powder electroluminescent device (PELD). Generally PELD which have a luminance from powder phosphor with electric field, inserted phosphor and dielectric layer between electrodes is basic structure. To make high brightness PELD compared to conventional device, new type of PELD was proposed as follows. New PELD had only one layer, which was mixed phosphor (ZnS:Cu) and dielectric (BaTiO3) material appropriately between electrodes. To compare and estimate the conventional and new type of PELD, the EL spectrum, transferred charge density, brightness and decay time was measured. As above result, we fabricated a hish brightness $ 5{\times}5$ dot-matrix display with new type of PELD. Its brightness was 6400 $cd/m^2$ at 200 V, 400Hz.