• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.21-25
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• 2006

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.272-275
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• 2005

We studied the control of pretilt angles for homeotropic aligned nematic liquid crystal (NLC) on SiOx thin film surface by $45^{\circ}$ evaporation method with electron beam system. The uniform vertical LC alignment on. the SiOx thin film surfaces with electron beam evaporation was achieved. It is considered that the LC alignment on SiOx thin film by $45^{\circ}$ electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the SiOx thin film surface created by evaporation. The pretilt angles of about $3.5^{\circ}$ in aligned NLC on SiOx thin film surfaces by electron beam evaporation of $45^{\circ}$ were measured. Consequently, the high pretilt angles of the NLC on the SiOx thin film by $45^{\circ}$ oblique electron beam evaporation method can be achieved.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.155-164
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• 2011

Electron beam evaporation source is widely used to prepare thin films by physical vapor deposition because it is very effective to vaporize materials and there is virtually no limit to vaporize materials including metals and compounds such as oxide. In this study, evaporation characteristics of various metals and compounds from an electron beam evaporation source have been studied. The 180 degree deflection type electron beam evaporation source which has 6-hearth crucibles and is capable of inputting power up to 10 kW was employed for evaporation experiment. 36 materials including metals, oxides and fluorides have been tested and described in terms of optimum crucible liner, evaporation state, stability, and so on. Various crucible liners have been tried to find out the most effective way to vaporize materials. Two types of crucible liners have been employed in this experiment. One is contact type liner, and the other is non-contact type one. It has been tried to give the objective information and the most effective evaporation method on the evaporation of materials from the electron beam evaporation source. It is concluded that the electron beam evaporation source can be used to prepare good quality films by choosing the appropriate crucible liner.

• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.305-308
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• 2006

We have studied liquid crystal (LC) aligning capabilities for homeotropic alignment and the control of tilt angles on the $SiO_{x}$ thin film by electron beam evaporation method. A high tilt angle of about $86.5^{\circ}$ was obtained, and also the suitable tilt angle of the NLC on the $SiO_{x}$ thin film at $20{\sim}50\;nm$ thickness with e-beam evaporation can be achieved. The uniform LC alignment on the $SiO_{x}$ thin film surfaces with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $SiO_{x}$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_{x}$ thin film surface created by evaporation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.43-50
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• 2007

We have investigated the electro-optical characteristics and reliability of LEDs with the Indium-Tin-Oxide (ITO) electrodes formed by different deposition methods: electron beam evaporation, sputtering, and hybrid method of electron beam evaporation and subsequent sputtering. The deposition method of the ITO electrode has significant influence on the electro-optical characteristics and reliability of LEDs. The LEDs with the ITO electrodes formed by sputtering and electron beam evaporation have problems caused by sputtering damage and increased electrical resistance, respectively, and the problems have been solved by the hybrid method.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.1-6
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• 2003

An axial electron beam gun system, which emits the electron beam power of 50 kW, has been manufactured. The electron beam gun consists of two parts. One is the electron beam generation part. including the filament, cathode, and anode. The maximum beam current is 2 A and the acceleration voltage is 25 kV. The other part includes the focusing-, deflection-, and scanning coils. The beam diameter and ham trajectory can be controlled by these coils. The characteristic of each part is measured ior the optimum condition of evaporation process. Moreover, Helmholtz coil is installed inside the vacuum chamber to adjust the incident angel of the beam to the melting surface for the maximum evaporation. We report on the evaporation rates for zirconium(Zr) and gadolinium(Gd) metals which have the high melting temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.378-378
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• 2007

In this study, liquid crystal (LC) aligning capabilities for homeotropic alignment on the $ZrO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $ZrO_x$ thin film were investigated. The uniform LC alignment on the $ZrO_x$ thin film surfaces and good thermal stabilities with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $ZrO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $ZrO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $ZrO_x$ thin film layer with. oblique electron beam evaporation.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.274-277
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• 2007

In this study, liquid crystal(LC) aligning capabilities for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the nematic liquid crystal(NLC) treated on $SiO_x$ thin film were investigated. A high pretilt angle of about $86.5^{\circ}$ was obtained, and also the suitable pretilt angle of the NLC on the $SiO_x$ thin film at $10{\sim}50nm$ thickness with e-beam evaporation can be achieved. The uniform LC alignment and good thermal stabilities on the $SiO_x$ thin film surfaces with electron beam evaporation can be achieved. It is considered that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1564-1567
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• 2009

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.