• Title/Summary/Keyword: Electron-beam deposition

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SIL VER-IMPREGNATED HAP-COATING ON ALUMINA SUBSTRATE FOR PREVENTION OF INFECTION

  • Kim, T.N.;Feng, Q.L.;Wu, J.;Kim, J.O.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.27-33
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    • 1997
  • Recently ion beam assistant deposition (IBAD) was successfully used to produce a dense ultra-adherent and pinhole-free hydroxyapatite (HAp) layer on alumina substrate. After that the HAp-coated alumina was immersed in 20ppm and 100ppm $AgNO_3$ solution at room temperature for 48 hours to carry out the ions exchange between $Ag^+\;and\;Ca^+$ in HAp. The obvious antimicrobial effect against E.Coli, P. Aeruginosa and S. Epidermidis was observed in the samples treated with 20ppm $AgNO_3$ Solution, In contrast to this the untreated samples did not show any bactericidal effect. Scanning electron microscope(SEM) study showed that Ag homogeneously distributed on the surface. X-ray diffraction (XRD) demonstrated that the surface structure in the samples without Ag was HAp whereas with Ag is HAp and AgCaP. It appears that silver ions exchange with calcium ions in HAp does not cause significant changes in the structure of HAp coatings.

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Structural Characteristics of $Y_2O_3$ Films Grown on Differently Surface-treated Si(111) by Ultrahigh Vacuum Ionized Cluster Beam (UHV-ICB 방법으로 Si(111) 기판위에 성장된 $Y_2O_3$ 박막의 구조적 특성에 관한 연구)

  • Lee, Dong-Hun;Seong, Tae-Yeon;Jo, Man-Ho;Hwang, Jeong-Nam
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.528-532
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    • 1999
  • Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

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The influence of preparation conditions on the electrochemical degradation of tungsten oxide thin films prepared by electron beam deposition (제작조건이 전자비임으로 제작된 텅스텐산화물 박막의 전기화학적 퇴화에 미치는 영향)

  • 이길동
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.306-313
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    • 1998
  • The electrochromic $WO_3$thin films were prepared by using the electron-beam evaporatin technique. Flms prepared at a vacuum pressure of $10^{-4}$ mbar were found to be most stable during repeated potential cycles. The chemical stability of the film in aqueous solutions was also affected by the vacuum pressure during evaporation. The redox current and the optical properties of the degraded films were affected by the thickness of the film. The 5,000$\AA$-thick films were found to be most stable, undergoing the least degradation during the repeated coloring and bleaching cycles. The origin of the mechanism dominating the degradation during the repeated coloring and bleaching cycles was the accumulation of lithium in the film, which results in decreasing redox current. Tungsten oxide films with titanium content of about 10-15 mol% was found to be most stable, undergoing the least degradation during the repeated cycles. The origin of the mechanism dominating the least degradation during the repeated cycles was the reduction of lithium ion trapping sites in the films, which results in a increased durability.

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Polydopamine Coating Behaviors on the Acrylic Acid Grafted-Nanofibers (아크릴산이 그라프트된 나노섬유에서의 폴리도파민 코팅)

  • Shin, Young Min;Kim, Woo-Jin;Park, Jong-Seok;Gwon, Hui-Jeong;Nho, Young-Chang;Lim, Youn-Mook
    • Journal of Radiation Industry
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    • v.5 no.4
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    • pp.371-376
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    • 2011
  • The surface property of the materials used in tissue engineering application has been essential to regulate cellular behaviors by directing their adhesion on the materials. To modulate surface property of the synthetic biodegradable materials, a variety of surface modification techniques have used to introduced surface functional groups or bioactive molecules, recently polydopamine coating method have been introduce as a facile modification method which can be coated on various materials such as polymers, metals, and ceramics regardless of their surface property. However, there are no reports about the degree of polydopamine coating on the materials with different hydrophilicity. In the present study, we prepared acrylic acid grafted nanofibrous meshes using electron-beam irradiation, and then coated meshes with polydopamine. Polydopamine successfully coated on the all meshes, both properties of acrylic acid and polydopamine were detected on the meshes. In addition, the degree of polydopamine deposition on the materials has been altered according to surface hydrophilicity, which was approximately 8-times greater than those on the non-modified materials. In conclusion, dual effect from the acrylic acid grafting and polydopamine may give a chance as a alternative tool in tissue engineering application.

PBMS의 교정 및 이를 이용한 진공 내 나노입자의 실시간 분석 연구

  • Kim, Dong-Bin;Mun, Ji-Hun;Kim, Hyeong-U;Kim, Deuk-Hyeon;Lee, Jun-Hui;Gang, Sang-U;Kim, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.91-91
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    • 2015
  • 반도체 공정의 발전에 의해 최근 생산되는 메모리 등은 십 수 나노미터까지 좁아진 선 폭을 갖게 되었다. 이러한 이유로, 기존에는 큰 문제를 발생시키지 않던 나노미터 영역의 입자들이 박막 증착 공정과 같은 반도체 제조공정 수율을 저감시키게 되었다. 따라서 오염입자의 유입을 막거나 제어하기 위해 transmission electron microscopy (TEM)나 scanning electron microscopy (SEM)과 같은 전자현미경을 활용한 비 실시간 입자 측정 방법 및 광원을 이용하는 in-situ particle monitor (ISPM) 및 전기적 이동도를 이용한 scanning mobility particle sizer (SMPS) 등 다양한 원리를 이용한 실시간 입자 측정방법이 현재 사용중에 있다. 이 중 진공 내 입자의 수농도를 측정하기 위해 개발된 particle beam mass spectrometer (PBMS) 기술은 박막 증착 공정 등 chemical vapor deposition (CVD) 방법을 이용하는 진공공정에서 활용 가능하여 개발이 진행되어 왔다. 본 연구에서는 PBMS의 한계점인 입자 밀도, 형상 등의 특성분석이 용이하도록 PBMS와 scanning electron microscopy (SEM), 그리고 energy dispersive spectroscopy (EDS) 기술을 결합하여 입자의 직경별 개수농도, 각 입자의 형상 및 성분을 함께 측정 가능하도록 하였다. 협소한 반도체 제조공정 내부 공간에 적용 가능하도록 기존 PBMS 대비 크기 또한 소형화 하였다. 각 구성요소인 공기역학 집속렌즈, electron gun, 편향판, 그리고 패러데이 컵의 설치 및 물리적인 교정을 진행한 후 입자발생장치를 통해 발생시킨 sodium chloride 입자를 상압 입자 측정 및 분류장치인 SMPS 장치를 이용하여 크기별로 분류시켜 압력차를 통해 PBMS로 유입시켜 측정을 진행하였다. 나노입자의 입경분포, 형상 및 성분을 측정결과를 토대로 장치의 측정정확도를 교정하였다. 교정된 장치를 이용하여 실제 박막 증착공정 챔버의 배기라인에서 발생하는 입자의 수농도, 형상 및 성분의 복합특성 측정이 가능하였으며, 최종적으로 실제 공정에 적용가능하도록 장치 교정을 완료하였다.

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Preparation of Cadmium-free Buffer Layers for CIGS Solar Cells (CIGS 태양전지용 Cd-Free 버퍼층 제조)

  • Moon, Jee Hyun;Kim, Ji Hyeon;Yoo, In Sang;Park, Sang Joon
    • Applied Chemistry for Engineering
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    • v.25 no.6
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    • pp.577-580
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    • 2014
  • Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

원자층증착법을 이용한 Y2O3 박막 형성 및 저항 스위칭 특성

  • Jeong, Yong-Chan;Seong, Se-Jong;Lee, Myeong-Wan;Park, In-Seong;An, Jin-Ho;Rao, Venkateswara P.;Dussarrat, Christian;Noh, Wontae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.229.2-229.2
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    • 2013
  • Yttrium oxide (Y2O3)는 band gap이 5.5 eV 정도로 상대적으로 넓고, 굴절상수가 1.8, 유전율이 10~15, Silicon 과의 격자 불일치가 작은 특성을 가지고 있다. 또한 녹는점이 높아 열적으로 안정하기 때문에 전자소자 및 광학소자에 다양하게 응용되는 물질이다. Y2O3 박막은 다양한 방법으로 증착할 수 있는데, 그 방법에는 e-beam evaporation, laser ablation, sputtering, thermal oxidation, metal-organic chemical vapor deposition, and atomic layer deposition (ALD) 등이 있다. ALD는 기판 표면에 흡착된 원자들의 자기 제한적 반응에 의하여 박막이 증착되기 때문에 박막 두께조절이 용이하고 step coverage와 uniformity 측면에서 큰 장점이 있다. 이전에는 Y(thd)3 and Y(CH3Cp)3 와 같은 금속 전구체를 이용하여 ALD를 진행하여, 증착 속도가 낮고 defect이 많아 non-stoichiometric한 조성의 박막이 증착되는 문제점이 있었다. 이번 연구에서는, (iPrCp)2Y(iPr-amd)와 탈이온수를 사용하여 Y2O3 박막을 증착하였다. Y2O3 박막 증착에 사용한 Y 전구체는 상온에서 액체이고 $192^{\circ}C$ 에서 1 Torr의 높은 증기압을 갖는다. Y2O3 박막 증착을 위하여 Y 전구체는 $150^{\circ}C$ 로 가열하여 N2 gas를 이용하여 bubbling 방식으로 공정 챔버 내로 공급하였다. Y2O3 박막의 ALD window는 $250{\sim}350^{\circ}C$ 였으며, Y 전구체의 공급시간이 5초에 다다르자 더 이상 증착 두께가 증가하지 않는 자기 제한적 반응을 확인할 수 있었다. 그리고 증착된 Y2O3 박막의 특성 분석을 위해 Atomic force microscopy (AFM)과 X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) 를 진행하였다. 박막의 Surface morphology 는 매끄럽고 uniform 하였으며, 특히 고체 금속 전구체를 사용했을 때와 비교하여 수산화물이 거의 없는 박막을 얻을 수 있었다. 그리고 조성 분석을 통해 증착된 Y2O3 박막이 stoichiometric하다는 것을 알수 있었다. 또한 metal-insulator-metal (MIM) 구조 (Ru/Y2O3/Ru) 의 resistor 소자를 형성하여 저항 스위칭 특성을 확인하였다.

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Histomorphometric study of machined titanium implants and calcium phosphate coated titanium implants (Machined 티타늄 임플란트와 calcium phosphate coated 티타늄 임플란트의 조직형태계측학적 연구)

  • Kang, Hyun-Joo;Yang, Jae-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.48 no.2
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    • pp.122-127
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    • 2010
  • Purpose: The objective of this study was to investigate the effects of calcium phosphate coated titanium implant surface on bone response and implant stability at early stage of healing period of 3 weeks and later healing period of 6 weeks. Material and methods: A total of 24 machined, screw-shaped implants (Dentium Co., Ltd., Seoul, Korea) which dimensions were 3.3 mm in diameter and 5.0 mm in length, were used in this research. All implants (n = 24), made of commercially pure (grade IV) titanium, were divided into 2 groups. Twelve implants (n = 12) were machined without any surface modification (control). The test implants (n = 12) were anodized and coated with thin film (150nm) of calcium phosphate by electron-beam deposition. The implants were placed on the proximal surface of the rabbit tibiae. The bone to implant contact (BIC) ratios was evaluated after 3 and 6 weeks of implant insertion. Results: The BIC percentage of calcium phosphate coated implants ($70.8{\pm}18.9%$) was significantly higher than that of machined implants ($44.1{\pm}16.5%$) 3 weeks after implant insertion (P = 0.0264). However, there was no significant difference between the groups after 6 weeks of healing (P > .05). Conclusion: The histomorphometric evaluation of implant surface revealed that; 1. After 3 weeks early healing period, bone to implant contact (BIC) percentage of calcium phosphate coated implants (70.8%) was much greater than that of surface untreated machined implants (44.1%) with P = 0.0264. 2. After 6 weeks healing period, however, BIC percentage of calcium phosphate coated implants group (79.0%) was similar to the machined only implant group (78.6%). There was no statistical difference between two groups (P = 0.8074). 3. We found the significant deference between the control group and experimental group during the early healing period of 3 weeks. But no statistical difference was found between two groups during the later of 6 weeks.

Development of Signal Processing Modules for Double-sided Silicon Strip Detector of Gamma Vertex Imaging for Proton Beam Dose Verification (양성자 빔 선량 분포 검증을 위한 감마 꼭지점 영상 장치의 양면 실리콘 스트립 검출기 신호처리 모듈 개발)

  • Lee, Han Rim;Park, Jong Hoon;Kim, Jae Hyeon;Jung, Won Gyun;Kim, Chan Hyeong
    • Journal of Radiation Protection and Research
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    • v.39 no.2
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    • pp.81-88
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    • 2014
  • Recently, a new imaging method, gamma vertex imaging (GVI), was proposed for the verification of in-vivo proton dose distribution. In GVI, the vertices of prompt gammas generated by proton induced nuclear interaction were determined by tracking the Compton-recoiled electrons. The GVI system is composed of a beryllium electron converter for converting gamma to electron, two double-sided silicon strip detectors (DSSDs) for the electron tracking, and a scintillation detector for the energy determination of the electron. In the present study, the modules of a charge sensitive preamplifier (CSP) and a shaping amplifier for the analog signal processing of DSSD were developed and the performances were evaluated by comparing the energy resolutions with those of the commercial products. Based on the results, it was confirmed that the energy resolution of the developed CSP module was a little lower than that of the CR-113 (Cremat, Inc., MA), and the resolution of the shaping amplifier was similar to that of the CR-200 (Cremat, Inc., MA). The value of $V_{rms}$ representing the magnitude of noise of the developed system was estimated as 6.48 keV and it was confirmed that the trajectory of the electron can be measured by the developed system considering the minimum energy deposition ( > ~51 keV) of Compton-recoiled electron in 145-${\mu}m$-thick DSSD.