• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.154-157
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• 2005

The use of electron-beam(E-Beam) manufacture systems provides a means to alleviate optic exposure equipment's problems. We designed an E-beam manufacture system with SEM function. Optimal beam scanning is one of the most important conditions in the performance of E-beam and SEM. The performance of E-beam manufacture system and images of SEM are a close affinity with each other. Developed E-beam manufacture system consist of the controllers of high voltage, scanning, optic and high voltage generator. In this paper, we analyze the condition of steady beam scanning and describe the development of controller fer optimal beam scanning.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• Advanced Composite Materials
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• 제16권4호
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• pp.315-334
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• 2007

In the present study, chopped henequen natural fibers without and with surface modification by electron beam (E-beam) treatment were incorporated into a polypropylene matrix. Prior to composite fabrication, a bundle of raw henequen fibers were treated at various E-beam intensities from 10 kGy to 500 kGy. The effect of E-beam intensity on the interfacial, mechanical and thermal properties of randomly oriented henequen/polypropylene composites with the fiber contents of 40 vol% was investigated focusing on the interfacial shear strength, flexural and tensile properties, dynamic mechanical properties, thermal stability, and fracture behavior. Each characteristic of the material strongly depended on the E-beam intensity irradiated, showing an increasing or decreasing effect. The present study demonstrates that henequen fiber surfaces can be modified successfully with an appropriate dosage of electron beam and use of a low E-beam intensity of 10 kGy results in the improvement of the interfacial properties, flexural properties, tensile properties, dynamic mechanical properties and thermal stability of henequen/polypropylene composites.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.617-621
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• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• 한국표면공학회지
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• 제43권4호
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• pp.170-175
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.777-778
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• 2013

• Safe Food
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• 제6권2호
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• pp.3-10
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• 2011

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.619-620
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• 2009

• 한국정밀공학회지
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• 제33권11호
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• pp.951-959
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• 2016

The aim of this paper is to investigate the improvement of surface characteristics of Stellite21 deposited layer by powder feeding type of direct energy deposition (DED) process using a plasma electron beam. Re-melting experiments of the deposited specimen is performed using a three-dimensional finishing system with a plasma electron beam. The acceleration voltage and the travel speed of the electron beam are chosen as process parameters. The effects of the process parameters on the surface roughness and the hardness of the re-melted region are examined. The formation of the re-melted region is observed using an optical microscope. Results of these experiments revealed that the re-melting process using a plasma electron beam can greatly improve the surface qualities of the Stellite21 deposited layer by the DED process.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.179-182
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• 2006

The effect of electron beam irradiation on dye sensitized solar cell (DSSC) has been studied to examine degradation of DSSC. The high-energy electron beam irradiation affects on the materials and performance of dye sensitized solar cells. We have checked the effects of electron beam irradiation of $TiO_2$ substrate with and without dye adsorption on the photovoltaic performances of resulting DSSCS and also studied the structural and electrical properties of polymers after irradiation. All solar cells materials were irradiated by electron beams with an energy source of 2MeV at different dose rates of 60 kGy, 120 kGy 240 kGy and 900 kGy and then their photoelectrical parameters were measured at 1 sun $(100 mW/cm^2)$. It was shown that the efficiency of DSSC was decreased as increasing the dose of e-beam irradiation due to lowering in $TiO_2$ crystallinity, decomposition of dye and oxidation of FTO glasses. On the other hand, the performance of solid-state DSSC with polyethylene oxide based electrolyte was improved after irradiation of e-beam due to enhancement of its conductivity and breakage of crosslinking.