• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.206-211
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• 2005

The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.35-39
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• 2003

This paper is contents on the orthorhombic crystalline calcined by the solid phase method with LiMnO$_2$ thin film structured as the result which an average pore diameter of power was 132.3${\AA}$ in porosity analysis. Voltage ranges are able to get the properties of charge and discharge for experimental results of LiMnO$_2$ thin film were 2.2V 4.3V. The current density and scan speed were 0. 1㎃/$\textrm{cm}^2$ and 0.2㎷/sec respectively. Properties of the charge and discharge are obtained by optimum experiment condition parameters. Li dense ratio of the LiMnO$_2$ thin film that discharged capacities were 87㎃h/g have been 96.9［ppm］ at 670.784［nm］ wavelength. The dense ratio of Mn analyzed to 837［ppm］ at 257.610［nm］ wavelength. It can be estimated the quality of the LiMnO$_2$ thin film as that the wrong LiMnO$_2$ thin film pulled up from cell of electrolyte and became dry it at 800$^{\circ}C$. The results of SEM and XRD were the same as that of original researchers.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.63-67
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• 2016

Divalent europium-activated $Ca_2PO_4Cl$ phosphor powders were prepared by a chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescence properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer. The effect of Ca/P mole ratio at the starting materials on the final products was evaluated. The optimized synthesis condition obtained in this study was Ca/P mole ratio of 2.0. The present phosphor materials had higher photoluminescence intensity and better color purity than the commercial blue phosphor powders, $(Ca,Ba,Sr)_{10}(PO_4)_6Cl_2:Eu^{2+}$. The result of excitation spectrum measurement indicated that the excitation efficiency of the synthesized powders was higher for the long-wavelength UV region than that of the commercial phosphor. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.177-180
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• 2003

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi-barrier film. Transmission data of ITO film with four ITO films showed there was about large 90% transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75% transmission above 550nm wavelength. And, surface images measured from SEM(scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.289-292
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• 2015

The etching processes of glass in aqueous hydrofluoric acid (HF) solutions were used to improve the current density of solar cell. In this study, the textured glass substrate has been etched by solution and the $TiO_2$ thin films have been prepared on this textured glass. After the $TiO_2$ film deposition the surface has been etched by HF under different concentration and the etched $TiO_2$ thin films had a longer electron lifetime and higher haze ratio as well as light scattering, resulting in 1.7 times increment of dye-sensitized solar-cell(DSSC) efficiency. Increases in the surface root-mean-square roughness of glass substrates from 80 nm to 1774 nm enhanced haze ratio in above 300 nm wavelength. In particular, haze ratio of etched $TiO_2$ films on textured glass showed gradually increasing tendency at 550 nm wavelength by increasing of HF concentration up to 10M, suggesting a formation of crater with various sizes on its surface.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1005-1010
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• 1997

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1155-1156
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• 2006

In this paper, we analyzed the effect of EVA Sheet Gel Content depending on curing condition for photovoltaic module. Gel Content was measured by manufacturing Glass/EVA Sheet/Back Sheet scheme at several curing temperature and curing time. And the surface analysis of EVA Sheet depending on process condition could be observed using SEM(Scanning Electron Microscope). Through this experiment, we could confirm that there are differences on Gel Content of EVA Sheet and surface configuration depending on curing temperature and curing time. To find out the optical characteristic dependency on curing condition, Class/EVA Sheet/Glass scheme was fabricated. The optical transmittance of EVA Sheet at visible wavelength was enhanced 5% when compared to Glass/Glass scheme. And the transmittance of $130^{\circ}C$/4min, $110^{\circ}C$/4min, $160^{\circ}C$/6min process condition was higher at ultraviolet wavelength range. These curing conditions could be regarded as the best process for suppression the discoloration speed of EVA Sheet under UV light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.