• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.49-53
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• 1996

Crystal structures of N $a_{x}$W $O_3$(0.5$\leq$x$\leq$1.0) were investigated. Transmission electron microscopy (TEM) studies indicate that there is an ordering of sodium ions when x=0.75. The direction of ordering is [110] and the wavelength of ordering is twice of the interplanar distance of (110) plane. It has been confirmed that a superlattice containing eight N $a_{0.75}$W $O_3$is the unit cell of ordered structure. In this unit cell, Na sites at (100) and ($\frac{1}{2}$$\frac{1}{2}$$\frac{1}{2}$) are vacant. The ordered phase was preserved after the annealing at $600^{\circ}C$ in the air. In reduced N $a_{x}$W $O_3$with x=0.5 and 1.0, extra phases were found to coexist with the partially ordered perovskite phase. After annealing at $600^{\circ}C$, theses phases were transformed into the phases found in calcined specimens.ens.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• Journal of the Korean Chemical Society
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• v.43 no.3
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• pp.315-320
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• 1999

Novel electroluminescent materials, polymer material, PU-BCN and low molar mass material, D-BCN with the same chromophores were designed and synthesized. A molecular structure of chromophore was composed of bisstyrylbenzene derivative with cyano groups as electron injection and transport and phenylamine groups as hole injection and transport. Device structures with PU-BCN and D-BCN as an emission layer were fa-bricated, which were a single-layer device(SL), Indium-tin oxide(ITO)/emission layer/MgAg, and two kinds of double-layer devices which were composed of ITO/emission layer/oxadiazole derivative/MgAg as a DL-E device and ITO/triphenylamine derivative/emission layer/MgAg as a DL-H device. The two emission materials, PU-BCN and D-BCN with the same emission-chromophore were evaluated as having excellent performance of charge injection and transport and revealed almost the same emission characteristics in high current density. EL emission maximum peaks of two material were detected at about 640 nm wavelength of red emission region.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.508-513
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• 2005

[ $TiO_2-Fe_2O_3$ ] nanocomposite powders for magnetic photocatalyst were synthesized by sol-gel process, in which $TiO_2$ photocatalytic layer was formed on the surface of $\gamma-Fe_2O_3$ magnetic core. Transmission electron microscopy (TEM) observation and X-ray diffractometry (XRD) analysis revealed that$\gamma-Fe_2O_3$ nanoparticles, $10\~20nm$ in diameter, were coated by $TiO_2$ shell of 5nm in thickness and $TiO_2$ was anatase phase. Also hydroxyl group (-OH) used to decompose organic compounds was detected by Fourier transformation infrared spectrometry(FT-IR) analysis. UV-Visible spectrophotometry results showed that light absorption occurred in the wavelength range of $400\~700 nm$, and the band gap energy $(E_g)$ of powder was 1.8 eV. Finally it was found that the coercivity $(H({ci})$ and saturation magnetization $(M_s)$ of the powder were 79 Oe and 14.8 emu/g, respectively as experimental vibrating sample magnetometer (VSM) measurements.

• Journal of Powder Materials
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• v.25 no.1
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• pp.12-18
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• 2018

Cost-effective functional phosphor nanoparticles are prepared by introducing low-cost $SiO_2$ spheres to rare-earth phosphor ($YVO_4:Eu^{3+}$, $YVO_4:Er^{3+}$, and $YVO_4:Nd^{3+}$) shells using a sol-gel synthetic method. These functional nanoparticles are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, and general photoluminescence spectra. The $SiO_2$ sphere occupying the interior of the conventional phosphor is advantageous in significantly reducing the cost of expensive rare-earth phosphor nanoparticles. The sol-gel process facilitates the core-shell structure formation; the rare-earth shell phosphor has strong interactions with chelating agents on the surfaces of $SiO_2$ nanoparticles and thus forms layers of several nanometers in thickness. The photoluminescence wavelength is simply tuned by replacing the active materials of $Eu^{3+}$, $Er^{3+}$, and $Nd^{3+}$. Moreover, the photoluminescent properties of the core-shell nanoparticles can be optimized by manipulating the specific contents of active materials in the phosphors. Our simple approach substitutes low-cost $SiO_2$ for expensive rare-earth-based phosphor materials to realize cost-effective phosphor nanoparticles for various applications.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Carbon letters
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• v.21
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• pp.61-67
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• 2017

We report the use of carrot, a new and inexpensive biomaterial source, for preparing high quality carbon dots (CDs) instead of semi-conductive quantum dots for bioimaging application. The as-derived CDs possessing down and up-conversion photoluminescence features were obtained from carrot juice by commonly used hydrothermal treatment. The corresponding physiochemical and optical properties were investigated by electron microscopy, fluorescent spectrometry, and other spectroscopic methods. The surfaces of obtained CDs were highly covered with hydroxyl groups and nitrogen groups without further modification. The quantum yield of as-obtained CDs was as high as 5.16%. The cell viability of HaCaT cells against a purified CD aqueous solution was higher than 85% even at higher concentration ($700{\mu}g\;mL^{-1}$) after 24 h incubation. Finally, CD cultured cells exhibited distinguished blue, green, and red colors, respectively, during in vitro imaging when excited by three wavelength lasers under a confocal microscope. Offering excellent optical properties, biocompatibility, low cytotoxicity, and good cellular imaging capability, the carrot juice derived CDs are a promising candidate for biomedical applications.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.