• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.200-200
• /
• 2011

Although the cut-off probe, a precise measurement method for the electron density, is widely used in the industry, the physics on the wave spectrum of the cut-off is not understood yet, only cut-off point frequency containing the information of electron density has been analyzed well. This paper analyzes the microwave frequency spectrum of the cut-off probe to see the physics behind using both microwave field simulation (CST Microwave Studio) and simplified circuit simulation. The result shows that the circuit model well reproduces the cut-off wave spectrum especially in the low frequency regime where the wavelength of the driving frequency is larger than the characteristic length and reveals the physics of transmission characteristics with frequency as resonances between vacuum, plasma and sheath. Furthermore, by controlling the time domain in solver of the microwave simulator, the cut-off like transmission peaks above the cut-off frequency which has been believed as cavity effect is verified as chamber geometry effect. The result of this paper can be used as the basis for the improvement of cut-off probe.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.10
• /
• pp.3035-3040
• /
• 2014

A new efficient catalytic method for aza/thia-Michael addition reactions of amines/thiols with higher product yields has been developed. Combining single-walled carbon nanotubes (SWCNT) with triethylammonium hydrogen phosphate (TEAP) ionic liquid (IL) can work as a catalyst. We utilized Raman spectroscopy to gain insight into the interactions between IL and SWCNT. The interactions between SWCNT with TEAP were confirmed by the increasing intensity ratios and spectral shift in wavelength of the Raman D and G bands of SWCNT. Further, the morphology of the resulting composite materials of TEAP and SWCNT was determined by using scanning electron microscopy (SEM). Higher product yield in reduced reaction time is the key advantage of using bucky gel as a catalyst for Michael reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.5
• /
• pp.437-441
• /
• 2006

The red emitting OLEDs using $Alq_3$:Rubrene-GDI4234 phosphors have been fabricated and characterized . In the device fabrication, 2- TNATA [4,4',4' - tris (2- naphthylphenyl - phenylamino ) - tripheny lamine] as the hole injection material and NPB [N,N'-bis (1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as the hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum evaporation. And then, red color emissive layer was deposited using $Alq_3$ as the host material and Rubrene(5,6,11,12-tetraphenylnaphthacene)-GDI4234 as the dopants. finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:Rubrene-GDI4234/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Red OLEDs fabricated in our experiments showed the color coordinate of CIE(0.65, 0.35) and the maximum power efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• Journal of the Korean Ceramic Society
• /
• v.28 no.8
• /
• pp.585-592
• /
• 1991

ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.162-165
• /
• 2000

To investigate the effect of metal electrode in electroluminescent[EL] devices, we fabricated EL devices of ITO/P3HT/Al, ITO/P3HT/LiF/Al and ITO/P3HT/Mg:In structure. In current-voltage-light power characteristics, turn-on voltage of EL devices using LiF insulating layer and Mg:In(2.8V) metal electrode is lower than EL device using Al(4.2V). Besides the external quantum efficiency is improved also. The reason is related to carrier mobility and carrier injection, which would affect the hole-electron balance. In the device with Al electrode, holes injected from indium-tin-oxide[ITO] to poly(3-hexylthiophene)[P3HT] might reach the Al electrode without interacting with injected electrons, because the electron injection efficiency was very low for this electrode. Besides oxidation of the Al electrode is likely due to holes reaching the cathode without meeting injected electrons. Another possible reason for the higher EL efficiency may be the insulating layer playing the role of a tunneling barrier for holes to the Al electrode. In all EL devices, the orange-red light was clearly visible in a dark room. Maximum peak wavelength of EL spectrum emitted at 640nm in accordance with photon energy 1.9eV

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.473-476
• /
• 1997

Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1 ${\mu}{\textrm}{m}$ with high scan speed. The resolution for Si machining is determined by the selectivity of the chemical reaction rather than the laser spot size. In this study, we have obtained the maximum etch rate of 434.7 ${\mu}{\textrm}{m}$/sec with high aspect ratio. The characteristics of etched groove was investigated by scanning electron microscope(SEM) and auger electron spectroscopy(AES). It is assumed that the technique using arson ion laser is applicab1e to fabricate microstructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.444-445
• /
• 2007

IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.407-410
• /
• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Korean Journal of Materials Research
• /
• v.20 no.6
• /
• pp.294-300
• /
• 2010

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

• The Bulletin of The Korean Astronomical Society
• /
• v.42 no.2
• /
• pp.66.2-66.2
• /
• 2017

The Korea Astronomy and Space Science Institute plans to develop a coronagraph in collaboration with National Aeronautics and Space Administrative (NASA) and install it on the International Space Station (ISS). The coronagraph is an externally occulted one stage coronagraph with a field of view from 2.5 to 15 solar radii. The observation wavelength is approximately 400 nm where strong Fraunhofer absorption lines from the photosphere are scattered by coronal electrons. Photometric filter observation around this band enables the estimation of 2D electron temperature and electron velocity distribution in the corona. Together with the high time cadence (< 12 min) of corona images to determine the geometric and kinematic parameters of coronal mass ejections, the coronagraph will yield the spatial distribution of electron density by measuring the polarized brightness. For the purpose of technical demonstration, we intend to observe the total solar eclipse in 2017 August for the filter system and to perform a stratospheric balloon experiment in 2019 for the engineering model of the coronagraph. The coronagraph is planned to be installed on the ISS in 2021 for addressing a number of questions (e.g. coronal heating and solar wind acceleration) that are both fundamental and practically important in the physics of the solar corona and of the heliosphere.