• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.181-184
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• 2002

The electron transport coefficients in Air is analysed in range of E/N values from 100~1000(Td) by a MCS and BE method. This paper have calculated W, $ND_L$,$ ND_T$, Mean energy mixtures by $N_2+O_2$. The results gained that the values of the electron swarm parameters such as the electron drift velocity, longitudinal and transverse diffusion coefficients.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.154-159
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• 1997

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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• pp.16-19
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• 1999

This paper describes the electron transport characteristics in $SF_6$+He gas calculated for range of E/N values from $50{\sim}700[Td]$ by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained by TOF method. The results gained that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.359-364
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• 2000

The paper describes the electron transport characteristics in SP$_{6}$+He gas calculated E/N values 0.1~700[Td] by the Monte Carlos simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity the electron ionization or attachment coefficients longitudinal and transverse diffusion coefficients for SF$_{6}$+He gas at a range of E/N.E/N.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.7-11
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• 2001

We measured the electron transport coefficients, the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_{L}$, over the E/N range from 0.03 to 100 Td and gas pressure range from 0.133 to 122 kPa in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures by the double shutter drift tube with variable drift distance. And we calculated these electron transport coefficients by using multi-term approximation of Boltzmann equation analysis. We determined the electron collision cross sections set for $C_{3}F_{8}$ molecule by the comparison of measurement and calculation. Our special attention in the present study was focused upon the inelastic collision cross sections of the $C_{3}F_{8}$ molecule.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.773-778
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• 2001

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in SF$_{6}$ and SF$_{6}$-Ar mixtures have described. The ionization and attachment coefficients in pure SF$_{6}$ and SF$_{6}$-Ar mixtures have been calculated over the range of 10$_{6}$ molecule and for Ar atom proposed by other authors. The transport coefficients for electrons in (0.2%)SF$_{6}$-Ar and (0.5%)SF$_{6}$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained in this work will provide valuable information on the fundamental haviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. gas mixtures.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.169-174
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• 2001

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.