• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.2
• /
• pp.40-51
• /
• 1998

Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.

• Nuclear Engineering and Technology
• /
• v.46 no.2
• /
• pp.263-272
• /
• 2014

Scattering source calculations using conventional spherical harmonic expansion may require lots of computation time to treat full-coupled three-dimensional photon-electron transport in a highly anisotropic scattering medium where their scattering cross sections should be expanded with very high order (e.g., $P_7$ or higher) Legendre expansions. In this paper, we introduce a modified scattering kernel approach to avoid the unnecessarily repeated calculations involved with the scattering source calculation, and used it with parallel computing to effectively reduce the computation time. Its computational efficiency was tested for three-dimensional full-coupled photon-electron transport problems using our computer program which solves the multi-group discrete ordinates transport equation by using the discontinuous finite element method with unstructured tetrahedral meshes for complicated geometrical problems. The numerical tests show that we can improve speed up to 17~42 times for the elapsed time per iteration using the modified scattering kernel, not only in the single CPU calculation but also in the parallel computing with several CPUs.

• Electrical & Electronic Materials
• /
• v.9 no.2
• /
• pp.174-179
• /
• 1996

We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.2
• /
• pp.37-44
• /
• 2014

In this study, the performance of dye-sensitized solar cells with different thickness of the photelectrode film was simulated by using the electron-diffusion differential model. Through this simulation, the relationships between the thickness of the photoelectrode film and the performances (open-circuit voltage, short-circuit current density, and overall photoelectric-conversion efficiency) of cells were understood and the performances with different thickness of the photoelectrede film were also examined. For considering the refractive index in the liquid electrolyte and exploring the scattering effect of titanium dioxide particles with different sizes using the Mie light-scattering theory, the highest scattering effect of each particles was found out and the optimal size of the titanium dioxide particle was determined for light scattering in the photoelectrode film of dye-sensitized solar cell. Through experiment, the mixed titanium dioxide cell was better than the single titanium dioxide cell and generated a higher overall conversion efficiency because the optimal titanium dioxide particles in the phoelectrode film as light scattering.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.4
• /
• pp.107-112
• /
• 2001

Laser Thomson scattering measurements of electrom temperature and density in a neutral loop discharge (NLD) plasma were performed in order to reveal the electron behavior around the neutral loop (NL). The experimental results were examined by using a simulation model that included effects of a three dimensional electromagnetic field with spatial decay of the RF electric field, and the limitation of the spatial extent of the electron motion and collision effect. From the experiments and modeling of the electron behavior, it was found that NLD plasma posses the electron temeprature $T_{e}$ and density ne peaks around the NL is essential for the formation of plasma. Also, the optimum condition of plasma production could be simply estimated by the calculation of $U_{av}$ and $F_{0}$././.

• Korean Journal of Optics and Photonics
• /
• v.13 no.3
• /
• pp.209-214
• /
• 2002

The effect of surface roughness on mirror scattering has been studied. Five kinds of substrates with different surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering and electron beam evaporation. A total integrated scattering measurement set-up was built for the evaluation of deposited samples. Most of the ion beam sputtered mirrors showed lower scattering than the electron beam evaporated one, which deposited on substrates similar in surface roughness. Over ~2 $\AA$ in surface roughness, scattering strongly depend on the micro-structure of the super-polished surface. The lowest scattering we have achieved is 2.06 ppm by ion beam sputtering from the substrate with surface roughness of 0.23 $\AA$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.243.2-243.2
• /
• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.12
• /
• pp.1070-1078
• /
• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.525-525
• /
• 2013

Low temperature plasma diagnosis is one of the big issues in laboratory scale or processing industry. One of the most powerful techniques of plasma diagnostics is the use of the scattering of electromagnetic radiation from the plasma. Electron temperature and density are important parameters for understanding the information of plasmas in the plasma processing industry. Laser scattering experiments on plasma can provide a substantial amount of information about plasma parameters such as the electron density ne, the electron temperature Te, and the neutral density nn and temperature Tn. Thomson scattering spectroscopy is used several method, in accordance with detector type. Commonly, Thomson scattering is used several notch filter to separate expanded wavelength. Since using a spectrometer with surface relief grating or notch filter, the system of the measurement will be complicated and bigger. In this study, using VPHG (Volume Phase Holographic Grating) in order to install the simple and cheap system. VPHG has the advantage of the system installation, because it can be Transmission Type. The diffraction efficiency and dispersion angle of VPHG is higher than the surface relief grating relatively. For a wavelength and bandwidth selection, Using a slit or mask to select a rejection wavelength instead of notch filter.

• Nuclear Engineering and Technology
• /
• v.53 no.4
• /
• pp.1289-1296
• /
• 2021

In this study, an electron-scattering device was fabricated to practically use the ultra-high dose rate electron beams for the FLASH preclinical research in Dongnam Institute of Radiological and Medical Sciences. The Dongnam Institute of Radiological and Medical Sciences has been involved in the investigation of linear accelerators for preclinical research and has recently implemented FLASH electron beams. To determine the geometry of the scattering device for the FLASH preclinical research with a 6-MeV linear accelerator, the Monte Carlo N-particle transport code was exploited. By employing the fabricated scattering device, the off-axis and depth dose distributions were measured with radiochromic films. The generated mean energy of electron beams via the scattering device was 4.3 MeV, and the symmetry and flatness of the off-axis dose distribution were 0.11% and 2.33%, respectively. Finally, the doses per pulse were obtained as a function of the source to surface distance (SSD); the measured dose per pulse varied from 4.0 to 0.2 Gy/pulse at an SSD range of 20-90 cm. At an SSD of 30 cm with a 100-Hz repetition rate, the dose rate was 180 Gy/s, which is sufficient for the preclinical FLASH studies.