• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.88-93
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• 1999

This paper describes the electron transport characteristics in $SiH_4$ gas calculated for the range of E/n:0.5~300(Td) and Pressure:0.5, 1, 2.5(Torr) by the Monte carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the reported results. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal and transverse diffusion coefficients, the electron ionization coefficients, characteristics energy and the electron energy distribution function. The electron energy distributions function has been analysed in $SiH_4$ at E/N: 30, 50(Td)for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Monte carlo simulation and Boltzmann equation have been compared with experimental data by ohmori ad Pollock.

• Journal of Korean Society for Atmospheric Environment
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• v.19 no.E4
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• pp.169-175
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• 2003

The effect of gas composition on the discharge characteristics and the ozone production in silent discharge (SD) process was investigated. The major gas components, $N_2$, $O_2$, and $H_2O$ influence the discharge properties according to their relative magnitude of ionization thresholds and electron affinities. The generated amount of ozone increased with the discharge energy by increasing the electron mean energy. The higher oxygen content injected, the higher ozone produced. A small amount of water vapor significantly lowered the discharge onset voltage by the ionization threshold decreasing effect and high electrical conductivity. However, the further increase of water vapor contributes to decrease the electron density by the electron affinity The addition of water greatly reduced the ozone generation through the formation of OH radical and the catalytic ozone destruction process.

• Journal of Magnetics
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• v.15 no.1
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• pp.7-11
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• 2010

Spin-orbit coupling (SOC) is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact. Surprisingly, this suppression was not limited to the vicinity of the contact but extended to the entire two-dimensional electron gas. This facilitates the electrical control of the spin degree of freedom in a two-dimensional electron gas through spin-orbit coupling.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.69-75
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• 2005

Gas avalanche microdetectors, such as micro-strip gas chamber (MSGC), micro-gap chamber (MGC), micro-dot chamber (MDOT), etc., are operated under high voltage to induce large electron avalanche signal around micro-size anodes. Therefore, the anodes are highly exposed to electrical damage, for example, sparking because of the interaction between high electric field strength and charge multiplication around the anodes. Gas electron multiplier (GEM) is a charge preamplifying device in which charge multiplication can be confined, so that it makes that the charge multiplication region can be separate from the readout micro-anodes in 9as avalanche microdetectors possible. Primary electron collection efficiency is an important measure for the GEM performance. We have defined that the primary electron collection efficiency is the fractional number of electron trajectories reaching to the collection plane from the drift plane through the GEM holes. The electron trajectories were estimated based on 3-dimensional (3D) finite element method (FEM). In this paper, we present the primary electron collection efficiency with respect to various GEM operation parameters. This simulation work will be very useful for the better design of the GEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.154-159
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• 1997

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.91-91
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• 2005

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

• Journal of Food Hygiene and Safety
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• v.16 no.1
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• pp.61-65
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• 2001

To investigate the optimum condition of 3-monochloro-1, 2-propanediol(MCPD) analysis, gas chromatography with electron capture detector was used. Determination of MCPD derivatized with phenylboric acid was more effective than that of underivatized MCPD. In derivatization of MCPD with phenyl boric acid, there were no significantly different between boiling for 2min at 9$0^{\circ}C$ and vortexing for 5min at room temperature. Extrelut column was suitable for extraction of MCPD diluted in 20% NaCl solution and recovery rates were higher than direct extraction of MCPD with ethyl acetate. But, the method of direct extraction of MCPD with ethyl acetate was useful for rapid ants qualitative analysis. The sample extracted in soysauce(ganjang) was derivatized with phenylboric acid and analyzed by gas chromatography-mass selective detector. That was confirmed as MCPD-phenylboronate.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2424-2426
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• 2005

In whole world consciousness of environment maintenance have increased very quickly for he end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe and Ne:Ar mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe and Ne:Ar plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe and Ne:Ar.