• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• Bulletin of the Korean Chemical Society
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• 제29권3호
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• pp.599-603
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• 2008

The complexes Pd(nbmtp)Cl2 and Pt(nbmtp)Cl2 (nbmptp = 1-nonyl-3,4-bis(methylthio)pyrrole) were prepared and their x-ray structures were determined at room temperature. The four-coordinated metal unit and the pyrrole ring formed a nearly planar geometry. The free ligand dissolved in CH2Cl2 produced two luminescence bands associated with the lone-pair electron of S (l max = 525 nm) and the pyrrole p electron (l max = 388 nm). When the two complexes were dissolved in CH2Cl2, these two luminescence bands were also observed, although the low-energy band was blueshifted. For the crystalline Pt(II) complex, only the strong charge transfer band (l max = 618 nm) from the d* orbital of Pt resulted from excitation of the lone-pair electron of S.

• 전기학회논문지
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• 제63권10호
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• pp.1485-1490
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• 2014

$SF_6$ gas has been used for power transformers or gas insulated switchgears, because it has the superior insulation property and the stable structure chemically. It has been, however, one of global warming gases and required to reduce the its amount. Some papers have reported that its amount could be reduced by mixing with other gases, such as $N_2$, $CF_4$, $CO_2$ and $C_4F_8$ and their mixture gases would cause the synergy effect. In this paper, we investigated the characteristics of DC plasmas on $SF_6$ mixture gases with $N_2$ at atmospheric pressure. $N_2$ gas is one of cheap gases and has been reported to show the synergy effect with mixing $SF_6$ gas, even though $N_2$ plasmas have electron-positive characteristics. 38 kinds of $SF_6/N_2$ plasma particles, which consisted of an electron, two positive ions, five negative ions, 30 excitation and vibration particles, were considered in a one dimensional fluid simulation model with capacitively coupled plasma chamber. The results showed that the joule heating of $SF_6/N_2$ plasmas was mainly caused by positive ions, on the other hand electrons acted on holding the $SF_6/N_2$ plasmas stably. The joule heating was strongly generated near the electrodes, which caused the increase of neutral gas temperature within the chamber. The more $N_2$ mixed-ratio increased, the less joule heating was. And the power consumptions by electron and positive ions increased with the increase of $N_2$ mixed-ratio.

• Journal of Photoscience
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• 제12권1호
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• pp.33-39
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• 2005

Plants possess the ability to dissipate the excitation energy for the protection of photosynthetic apparatus from absorbed excess light. Heat dissipation is regulated by xanthophyll cycle in thylakoid membranes of chloroplasts. We investigated the mechanistic aspects of xanthophyll cycle-dependent photoprotection against low-temperature photoinhibition in plants. Using barley and rice as chilling-resistant species and sensitive ones, respectively, chilling-induced chlorophyll fluorescence quenching, composition of xanthophyll cycle pigments and mRNA expression of the zeaxanthin epoxidase were examined. Chilled barley plants exhibited little changes in chlorophyll fluorescence quenching either of photochemical or non-photochemical nature and in the photosynthetic electron transport, indicating low reduction state of PS II primary electron acceptor. In contrast to the barley, chilled rice showed a marked decline in those parameters mentioned above, indicating the increased reduction state of PS II primary electron acceptor. In addition, barley plants were shown to have a higher capacity to elevate the pool size of xanthophyll cycle pigments in response to cold stress compared to rice plants. Such species-dependent regulation of xanthophyll cycle activity was correlated with the gene expression level of cold-induced zeaxanthin epoxidase. Chilled rice plants depressed the gene expression of zeaxanthin epoxidase, whereas barley increased its expression in response to cold stress. We suggest that chilling-induced alterations in the pool size of xanthophyll cycle pigments related to its capacity would play an important role in regulating plant's sensitivity to chilling stress.

• 한국재료학회지
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• 제22권3호
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• pp.145-149
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• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• 한국광학회지
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• 제3권3호
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• pp.183-190
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• 1992

$Al_x/Ga_{1-x}$ /As/AlAs GaAs 계로 이루어진 비대칭 이중 양자우물 구조의 광학적 특성을 photoluminescence, photoluminescence excitation, time-resolved photoluminescence를 통하여 조사하였다. 양자장벽 AlAs의 두께에 따른 특성 변화를 조사하기 위하여 두께를 15$\AA$., 150$\AA$로 제작하였다. 양자장벽이 15$\AA$인 경우 매우 빠른 전자의 관통 현상을 보여 주었으며, 이로 인해 $Al_x/Ga_{1-x}$As의 여기자 재결합에 해당하는 피크가 관찰되지 않았다. AlAs 양자장벽이 150$\AA$인 경우에는 $Al_x/Ga_{1-x}$As양자우물에서 여기자 재결합에 의한 피크가 50ps 이하로 빠른 decay시간을 보여 주었으며 이것은 양자장벽과의 $\Gamma$-X전이에 의한 것으로 사료되었다. GaAs양자우물에서의 luminescence decay는 두 시료 모두 1ns정도 이었으나, 15$\AA$인 경우에는 약 100ps의 rise시간이 존재하였으며 이것은 정공의 관통에 의한 시간으로 판명되었다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• Current Applied Physics
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• 제18권11호
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• pp.1403-1409
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• 2018

In the present study, the $SrMoO_4:Eu^{3+}$ phosphors has been synthesized through hydro-thermal co-precipitation method, and single factor and orthogonal experiment method was adopted to find optimal synthesis condition. It is interesting to note that hydro-thermal temperature is a prominent effect on the luminescent intensity of $SrMoO_4:Eu^{3+}$ red phosphor, followed by co-precipitation temperature, calcining time, and the doping amount of $Eu^{3+}$. The optimal synthesis conditions were obtained: hydro-thermal temperature is $145^{\circ}C$, co-precipitation temperature is $35^{\circ}C$, the calcining time is 2.5 h, and the doping amount of activator $Eu^{3+}$ is 25%. Subsequently, the crystalline particle size, phase composition and morphology of the synthesized phosphors were evaluated by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The results show that these phosphors possess a scheelite-type tetragonal structure, and the particle size is about $0.2{\mu}m$. Spectroscopic investigations of the synthesized phosphors are carried out with the help of photo-luminescence excitation and emission analysis. The studies reveal that $SrMoO_4:Eu^{3+}$ phosphor efficiently convert radiation of 394 nm-592 and 616 nm for red light, and the luminescence intensity of $SrMoO_4:Eu^{3+}$ phosphors is improved. $SrMoO_4:Eu^{3+}$ phosphors may be a potential application for enhancing the efficiency of white LEDs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• 천문학회지
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• 제33권2호
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• pp.81-88
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• 2000

The international ultraviolet explorer (IUE) spectra of a low dispersion $\~6{\AA}$, have been investigated for two Seyfert 1 galaxies, Mrk 335 and NGC 4051, well known for the line variability. The electron densities of broad line region (BLR) of these variable Seyfert 1 galaxies have been derived, which showed a non-linear abrupt variation from $10^8$ to $10^{10} cm-3$ within a month. We also found the excitation (or temperature) changes in the Mrk 335 BLR from the IUE broad line profiles analysis, but no such evidence in the NGC 4051. The large amount of mass inflow activity through the bar or spiral structure of host galaxies, may trigger the density change in BLR and emission line variability for both objects. Mass of the giant black holes appear to be order of $10^7\;M_{\bigodot}$ for both variable Seyfert l's.