• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1229-1232
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• 2006

We have grown well-aligned carbon nanotube arrays on the selective areas by plasma enhanced chemical vapor deposition at the substrate temperature of $580\;^{\circ}C$. The selective areas for CNTs growth can be defined by photo lithography technology. The CNTs are uniformly grown on the areas regardless of island diameters. Electron emission currents were measured in a vacuum with a diode structure at room temperature. Uniform electron emission currents were achieved with $40\;{\mu}m$ island spacing with $5{\mu}m$ island diameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.147-150
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• 2002

The electron field emission properties of amorphous carbon (a-C) films deposited using a RF magnetron sputtering system have been improved by introducing a simple method of argon plasma treatment at room temperature. Surface morphologies and structural properties of the a-C films were investigated by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphologies of the a-C films were changed by argon plasma treatment. The emission properties improved with the plasma treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.221-223
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• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.81-81
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.736-739
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• 2009

We have studied that the secondary electron emission characteristics of functional layers which have different kinds of MgO sub-micrometer size powder in AC-PDP. We used cathodoluminescence(CL) and gamma focused ion beam (${\gamma}$-FIB) system for measurement of secondary electron emission characteristics. Also we made 6 inch test panel which applied functional layers for evaluation of discharge characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1023-1026
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• 2007

Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. To enhance electron injection from ITO cathode to Alq3 EML layer, we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of 21100 Cd/m2 and current efficiencies of 3.56 Cd/A.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.3
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• pp.376-379
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• 2013

Multi-walled carbon nanotubes (MWCNTs) were synthesized using catalytic chemical vapor deposition (CVD) method. Oxygen plasma treatment was applied to modify surface state of the CNTs synthesized for improvement of field emission performance. Surface state of the plasma treated CNTs was studied by X-ray photoelectron spectroscopy (XPS). The surface states of the CNTs were changed as a function of plasma treatment time. The oxygen related carbon shift was moved toward higher binding energy with the plasma treatment time. This result implies that the oxygen plasma treatment changes the surface state effectively. While any shift in carbon 1s peak was not detected for the as grown CNTs, oxygen related carbon shift was detected for the plasma treated CNTs. Carbon shift implies that closed CNT tips were opened by the oxygen plasma and reacted with oxygen species. Since the field emission occurs at pentagons or dangling bonds of the CNT tips, the increase of carbon-oxygen bonds plays an important role in field emission behavior by increasing the number of electron emission sites resulting in improvement of the field emission performance.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.7-12
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• 2010

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.177-181
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• 2001

The conversion efficiency of a cesium iodine coated micro-channel plate is studied. We use the EGS4 code to transport photons and generated electrons until their energies become less than 1keV and 10keV respectively. Among the generated electrons, the emission from the secondary electrons located within the escape depth of 56nm from the photo-converter boundary is estimated by integrating the product of the secondary electrons with a probability depending only on their geometric locations. The secondary electron emission from the generated electrons of energy higher than 100eV is estimated by the 'universal yield curve'. The sum of these provides an estimate for the secondary electron yield and we show that results of applying this algorithm agree with known experimental results. Using this algorithm, we computed secondary electron emissions from a micro-channel plate used in a gas electron multiplier detector that is currently being developed at Korea Atomic Energy Research Institute.