• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.369.2-369.2
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• 2014

Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.581-581
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• 2012

나노스케일에서의 자구체(magnetic domain), 자화벽(magnetic domain wall)에 대한 연구가 활발하게 진행되고 있으며 특히 자화벽의 위치를 임의로 제어할 수 있는 기술을 응용한 메모리 소자에 대한 연구가 활발하다. 반면에 이러한 연구에 필수적인 자구체, 자화벽 이미징 장비는 매우 미비한 상황이다. 이와 같은 자성이미징(magnetic domain image), 자화벽(magnetic domain wall)을 연구하는데 있어 가장 핵심적인 장비가 SEMPA(Scanning Electron Microscopy with Polarization Analysis)이다. 일반적으로 SEM의 경우 고 에너지 빔의 전자 빔을 주사 시키고 이때 발생되는 이차 전자의 수를 2차원상의 영역에 따라 달라지는 비로 형상을 측정하게 된다. 이때 전자의 수 뿐만 아니라 이들의 spin polarization을 측정할 수 있다면 형상뿐 만 아니라 표면에서의 스핀 상태를 동시에 측정할 수 있게 된다. 기 개발된 W-filament source를 이용한 SEMPA는 field emission source에 비하여 전자빔의 세기가 약하며 이차 전자의 수도 적어 spin polarization 감도가 현저히 떨어진다. 또한 초고진공($1{\times}10^{-10}torr$)에서 사용할 수 없어 측정시료의 contamination을 방지할 수 없다. 이러한 문제점들을 보안하기 위하여 field emission source를 이용한 FE-SEMPA를 개발 중이며 2차전자의 spin polarization감도를 증가시키기 위하여 monte carlo simulation과 전산시늉등울 통해 스핀 검출기를 개발 및 연구결과를 발표하고자 한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.256-257
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• 2015

마그네슘 합금은 낮은 비중, 높은 비강도, 주조성 및 절삭가공성, 치수안정성, 내흠집성이 우수한 특성을 지니고 있는 경량금속으로써 우수한 주조성과 상온강도, 연신율을 나타낸다. 최근에는 마그네슘 합금을 사용한 IT 기기의 케이스 및 자동차 내, 외장 부품 등의 제품이 다양하게 출시되어지며 금속 질감의 감성 기능까지 적용시킨 전자 기기 제품에 대한 수요가 급증하고 있는 추세이다. 하지만 마그네슘 합금의 낮은 부식 저항성은 마그네슘 합금을 적용시킨 제품에 큰 단점으로 작용되고 있으며 이를 해결하기 위한 연구가 활발히 진행 중이다. 본 연구에서는 플라즈마 전해산화법과 실리카 졸-겔 코팅법을 이용하여 마그네슘 합금의 내부식성을 향상시킴과 동시에 금속질감의 감성 기능을 구현하고자 하였다. 플라즈마 전해산화 공정으로 형성된 산화피막층과 $SiO_2$ 코팅으로 형성된 코팅층의 표면과 단면에 대해서는 FE-SEM(Field emission Scanning Electron Microscope)과 FE-TEM(Field emission Transmission Electron Microscope)으로써 확인하였고 전기화학적 특성 분석을 통한 동전위(Potentiodynamic polarization)와 EIS(Eletrochemical Impedance Spectroscopy) 그리고 Salt spray등을 분석하였다.

• Korean Membrane Journal
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• v.6 no.1
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• pp.55-60
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• 2004

In recent years, an increasing interest in membrane technology has been observed in chemical and environmental industry. Membrane technology has advantages of low cost, energy saving and environmental clean technology comparing to conventional separation processes. Pervaporation is one of new advanced membrane technology applied for separation of azeotropic mixtures, aqueous organic mixtures, organic solvent and petrochemical mixtures. Sodium alginate composite membranes were prepared for the enhancement of long-term stability of pervaporation performance of water-ethanol mixture using pervaporation. Sodium alginate membranes were crosslinked with CaCl$_2$ and coated with polyelectrolyte chitosan to protect washing out of calcium ions from the polymer. The surface structures of PAN and hydrolysed PAN membrane were confirmed by ATR Fourier transform infrared (FT-IR). A field emission scanning electron microscopy (FE-SEM; Jeol 6340F) operated at 15 kV. Concentration profiles for Ca in the membrane surface and membrane cross-section were taken by an energy dispersive X-ray (EDX) analyser (Jeol) attached to the field emission scanning electron microscopy (Jeol 6340F). Pervaporation experiments were done with several operation run times to investigate long-term stability of the membranes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.841-846
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• 2016

ZnO nanorods were grown on $SiO_2$ coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ~10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at $90^{\circ}C$. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.112-112
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• 2015

The purposed of this work was to determine nanotube shape variation on the Ti-xNb alloys with alloying elements and applied potentials. Samples were prepared by arc melting, followed by followed by homogenization for 12 hr at $1000^{\circ}C$ in argon atmosphere. This study was evaluated the phase and microstructure of Ti-xNb alloys using an X-ray diffraction (XRD) and optical microscopy (OM). The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). The nanotube on the alloy surface was formed in 1 M $H_3PO_4$ with small additions of NaF 0.8 wt.%. All anodization treatments were carried out using a scanning potentiostat (Model 362, EG&G, USA) at constant voltage 30 V for 120 min, respectively. The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Surface characteristics of nanotbue formed on Ti-xNb alloys was investigated by potentiodynamic test and potentiostatic in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. It was observed that the changed ${\alpha}$ phase to ${\beta}$ phase with Nb content.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.69-69
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• 2010

The research is the structural and optical characteristics of the Cadmium Sulfide(CdS) film, nanowires and nanobelts grown on the $Al_2O_3$ substrate using the vapor phase epitaxy method. The field-emission scanning electron microscopy(FE-SEM) were used to identify the shape of the surface of the nanostructures and x-ray diffraction(XRD) and transmission electron microscopy (TEM) were used to evaluate the structural characterisitcs. As a result, the XRD was confirmed the CdS peak and the substrate peak and TEM showed single crystals with wurtzite hexagonal structure on the nanostructures. As for the optical characteristic of the nanostructures, photoluminescence(PL) and micro-raman spectrum were measured. The PL measurements confirmed the emission peak related bound exciton to neutral donor($D^0X$) peak and free exciton(FX) peak. The micro-raman spectrum showed that the peak of the nanostructures were similar to the pure crystalline CdS peak and each peak were overtone of LO phonon of the hexagonal CdS of the longitudinal optical(LO) phonon mode. Therefore, it is confirmed that the CdS nanostructures grown in this research have superior crystallinity.