• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.923-928
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• 1997

An MCP (Microchannel Plate) is a secondary electron multiplier to detect and amplify electrons. An MCP has many rnicrochannels whose diameters range from 10 to 100pm and whose lengths range from 40 to 100times of the diameter. Each microchannel of the MCP amplifies electrons over IOOOtimes by the secondary electron emission. Even though MCPs have high performance for electron amplification, the application of MCPs is limited to high performance electronic equipments because of their high fabricating cost and the limit of increasing their size due to the conventional fabrication process. Therefore, in this work, microchannels of the MCP are manufactured by micro-drilling to reduce the cost of the MCP and to increase their size. Alumina green body with epoxy binder was machined for fabricating microchannels using a high speed air turbine spindle and micro-drills with diamond grinding abrasives. Then alumina MCP was fabricated through the sintering of the machined alumina green body.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.140-144
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• 2007

As an electron scanning microscopes has traditionally required a considerably large room equipped with several service and pipe lines due to its inherent size. As an alternative, a small sized SEM, simply called a mini-SEM, is introduced even if the performance in terms of magnification and resolution is a little inferior to a classical thermal SEM. However, the size and fabrication cost is dramatically reduced, dedicating to opening a new market. The optical system in the mini-SEM is redesigned and specimen stage is quitely reduced and vertical axis is excluded. The design tools and calibration techniques to develope the mini-SEM are introduced and its performance is verified through numerical analysis experiments.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• Journal of Electrochemical Science and Technology
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• v.3 no.1
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• pp.35-43
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• 2012

Highly ordered and perforated anodic aluminum oxide membranes were prepared by anodic oxidation and subsequent removal of the barrier layer. By using these homemade anodic aluminum oxide membranes as templates, metal selenide nanowires and nanotubes were synthesized. The structure and composition of these one-dimensional nanomaterials were studied by field emission scanning electron microscopy as well as transmission electron microscopy and energy dispersive X-ray spectroscopy. The growth process of metal selenide inside anodic aluminum oxide channel was traced by investigating the series of samples using scanning electron microscopy after reacting for different times. Straight and dense copper selenide and silver selenide nanowires with a uniform diameter were successfully prepared. In case of nickel selenide, nanotubes were preferentially formed. Phase and crystallinity of the nanostructured materials were also investigated.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.86-91
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• 2009

The electrons injected into a laser wakefield undergo betatron oscillation and give rise to the emission of intense X-ray radiation. To investigate the generation conditions of the X-rays, the relativistic motion of an electron injected in an off-axis position has been simulated with wakefield profiles which are pre-calculated with a two-dimensional particle-in-cell code. The wakefield with a plasma density of $1.78{\times}10^{18}\;cm^{-3}$ is generated by the laser with an intensity of $1.37{\times}10^{18}\;W/cm^2$ and a pulse width of 30 fs. From the calculation of the single particle motion, the characteristics of the betatron radiation are investigated in the time domain. As the transverse injection position increases, the power and the duration time of the radiation increase, but the width of each pulse decreases.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.472-473
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• 2006

Maghemite and hematite nanospheres were synthesized by using the Sol-gel technique. The structural properties of these nanosphere powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), and pore size distribution. Hematite phase shows crystalline structures. The mean particle size that resulted from BET and XRD analyses were 4.9 nm and 2 nm. It can be seen from transmission electron microscopy that the size of the particles are very small which is in good agreement with the FESEM and the X-ray diffraction. The BET and pore size method were employed for specific surface area determination.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.3
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• pp.150-158
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• 2022

The effects of scandium addition on the Al-6Si-2Cu Alloy were investigated. The Al-6Si-2Cu-Sc alloy was prepared by gravity die casting process. In this study, scandium was added at 0.2 wt%, 0.4 wt%, 0.8 wt%, and 1.0 wt%. The microstructure of Al-6Si-2Cu-Sc alloy was investigated using Optical Microscope, Field Emission Scanning Electron Microscope, Electron Back Scatter Diffraction, and Transmission Electron microscope. The microstructure of Al-6Si-2Cu alloy with scandium added changed from dendrite structure to equiaxed crystal structure in specimens of 0.4 wt% Sc or more, and coarse needle-shape eutectic Si and β-Al₅FeSi phases were segmented and refined. The nanosized Al₃Sc intermetallic compound was observed to be uniformly distributed in the modified Al matrix.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.192-197
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• 2016

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.398-402
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• 2012

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.