• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1410-1411
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• 2011

Tip-type carbon nanotube(CNT) based electron emitters were fabricated by forming a hafnium(Hf) interlayer between the CNT and the substrate. The CNTs were deposited by using the electrophoretic deposition method and thermally treated. No significant change in the microscopic structure of the CNTs, such as the ratio of length to diameter, was observed after the deposition of Hf interlayer and thermal treatment. As compared with the CNT emitter without the Hf-interlayer and thermal treatment, the CNT emitter with the Hf-interlayer and thermal treatment showed noticeably improved electron-emission properties due to the enhanced adhesion.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.931-934
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• 2001

GaN nanowires has much interest as one-dimensional materials for blue light LED. GaN-based materials have been the subject of intensive research for blue light emission and high temperature/high power electronic devices. In this letter, the synthesis of GaN nanowires by the reaction of mixture of GaN nanowires by the reaction of mixture of Ga meta and GaN powder with NH$_3$ using thermal chemical vapor deposition is reported. X-ray diffraction, energy dispersive x-ray spectrometer, scanning electron microscopy, and transmission electron microscopy indicate that those GaN nanowires with hexagonal wurtzite structure were about 60nm in diameter and up to several hundreds of micrometers in length.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1294-1296
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• 2005

We have fabricated white organic light emitting diodes. To obtain balanced white emission and improve the efficiency of devices, thin electron blocking layer (TEBL) was inserted between the emitting layers. We showed that the effective injection of electrons through the optimization of TEBL (a - NPD) embodied the balance of spectra and had a possibility of getting white emission. In a device with 0.3 nm a-NPD, it had a maximum power efficiency of 3.80 lm/w at 250 $cd/m^2$, a luminance of 1200 $cd/m^2$ at 100 $mA/cm^2$ , and the CIE coordinates were (0.353, 0.357).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.799-801
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• 2003

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.112-115
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• 2010

This paper provides the properties of $TiO_2$ nanotube arrays which are fabricated by anodic oxidation of Ti metal. Highly ordered $TiO_2$ nanotube arrays could be obtained by anodic oxidation of Ti foil in $0.3\;wt{\cdot}%$ $NH_4F$ contained ethylene glycol solution at $30^{\circ}C$. The length, pore size, wall thickness, tube diameter etc. of $TiO_2$ nanotube arrays were analyzed by field emission scanning electron microscopy. Their crystal properties were studied by field emission transmission electron microscopy and X-ray photoelectron spectroscopy.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.149-153
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• 2015

As the temperature of the panel increases in AC-PDPs, the minimum driving voltage increases. Also, as the more the number of discharge increases in cells, the probability of the strong dark discharge in the reset period increases. In this study, we investigated the relationship between the lag time of the discharge and the mechanism of mis-discharges which are the black noise and bright noise. We conclude that the variation of time lag characterizes the properties of exo-electron emission from MgO. Thus, we found that the main factor of the mis-discharges is the rate of change of the electron emission ability from the MgO surface.

• 한국연소학회지
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• 제15권2호
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• pp.19-26
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• 2010

Combustion behavior of pulverized coal particles in a post-combustion gas reactor was investigated. Radiation emission from coal particles were analyzed by direct photograph and $CH^*$ radical chemiluminescence intensity. Coal particles were sampled during the combustion and were observed by scanning electron microscopy (SEM) and cross section micrograpy technique. Two coal types(one bituminous and one subbituminous coals typically used in the Korean power plants) were tested at typical combustion environment. Gas flow conditions were controlled to represent temperature and oxygen concentration. Experimental data were discussed along with conceptual descriptions of pulverized coal combustion, where particle heat-up, release and combustion of volatiles, and char combustion were sequentially progressed.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.232-236
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• 2015

The electro-optical characteristics of several functional layers over the MgO protective layer were studied during the continuous discharge of an AC-PDP. In order to observe the degradation of each functional layer on the MgO protection layer, we measured the surface morphology, cathodoluminescence (CL) spectrum, the secondary electron emission coefficient (${\gamma}$) and the discharge characteristics after 500 hours of discharge during the operation of the AC-PDP.