• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1224-1225
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• 2008

The results of the experiment that was conducted on the electron emission property and the long-term stability of the emission current in various carbon nanotubes (CNTs)-based field emitters with a CNT/catalyst/buffer/W-tip configuration are presented herein. CNT-based field emitters were fabricated by varying the (TiN, Al/Ni/TiN) buffer layer and the (Ni, Co) catalyst material. This study aimed to elucidate how the buffer layers and catalyst materials affect the structural properties of CNTs and the long-term stability of CNT emitters. Raman spectroscopy, field emission SEM, and high-resolution TEM were used to analyze the crystalline structure, surface morphologies, and nanostructures of all the grown CNTs. X-ray photoelectron spectroscopy (XPS) was used to monitor the chemical bonds of all the buffer layers and catalysts. Electron emission measurement and a long-term (up to 40h) stability test were carried out using a compactly designed field emission measurement system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.878-882
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• 2006

We have fabricated single organic layer devices of the organolanthanide complex, terbium tris-(1-phenyl-3-methyl-4-(tertiarybutyry)pyrazol-5-one)triphenylphosphine oxide [$(tb-PMP)_{3}Tb-(Ph_{3}PO)$] for the investigation of its light emission and electrical conduction properties. The thickness of ($(tb-PMP)_{3}Tb-(Ph_{3}PO)$) layer was varied to 60, 75, 95 nm. Mg and Ca layers were used for the cathode contact. The electrical conduction in the $(tb-PMP)_{3}Tb-(Ph_{3}PO)$ single layer devices was dominated by the injection of electrons into the organic layer from the cathode. A higher current density at much lower voltages can be attained with Ca cathode because of the enhanced electron injection. The device shows very sharp emission at 548 nm. The FWHM of the strongest emission peak was 12 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.220-220
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• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.90-91
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• 2007

Nano-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst/buffer/W-tip by adopting various buffer layers, such as TiN, Al, Al/TiN, and Al/hi/TiN. This study focuses on elucidating how the buffer layers affect the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM) and high-resolution transmission electron microscopy(HRTEM) are used to monitor the nanostructures and surface morphologies of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for all the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the most excellent performances, such as maximum emission current of $202{\mu}A$, threshold field of 2.08V/${\mu}m$, and long-term (up to 24h) stability of emission current.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.145-147
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• 2000

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1049-1052
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• 2008

We developed novel molecular dynamics and quantum chemical molecular dynamics simulators for the design of MgO protecting layer in plasma display panel. These simulators were applied to the investigations on the destruction processes of the MgO protecting layer as well as the evaluation of its second electron emission ability. From the simulation results, we successfully proposed new guidelines for MgO protecting layer with high durability and high second electron emission ability.