• Journal of Magnetics
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• v.16 no.4
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• pp.342-349
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• 2011

[ $Nd_2Fe_{14}B$ ]permanent magnetic powders ($_iH_c$ = 9.2 kOe, $B_r$ = 12.2 kG) were produced by HDDR process. Their coercivity was enhanced to 12.6 kOe through the grain boundary diffusion process with dysprosium hydride ($DyH_x$). $DyH_x$ diffusion process was optimized through rotating diffusion process, resulting in distinct phases rich in Nd and Dy observable by field emission scanning microscopy and transmission electron microscopy. The mechanism of coercivity enhancement that resulted in restrain the coupling effect between $Nd_2Fe_{14}B$ grains is also discussed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.236-238
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• 2003

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/\mu$, in pure Ne were calculated over the wide E/N range from 0.01 to 800 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1276-1281
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• 2010

To analyze the gas discharge phenomena in parallel-plane electrodes, the fully coupled finite element method (FEM) considering secondary electron emission effects in discharge column was adopted in this paper. Two coupled equations of the hydrodynamic diffusion-drift equations for three carriers and the Poisson's equation for electric scalar potential should be solved as a system equation. The proposed method including two secondary electron processes of the photoemission and background ionization has been successfully applied to evaluating the breakdown voltage in parallel-plane electrodes and is verified by comparing its numerical results with the experimental ones. From the obtained results, it is inferred that the proposed numerical scheme will be useful for predicting and understanding streamer transient phenomena.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1566-1567
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• 2006

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.451-452
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• 2007

Drift velocities for electrons in $SF_6$-Ar mixtures gas by simulation has been analysed over the EIN range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients. longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.28-32
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• 2002

Energy distribution function for electrons in $SF_6+Ar$ mixtures gas used by MCS-BEq algorithm bas been analysed over the E/N range 30-300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6+Ar$ mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.