• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.187-193
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• 2012

Digital X-ray image detector has been applied for medical and industrial fields. Photoconductors have been used to convert the X-ray energy to electrical signal on the direct digital X-ray image detector and amorphous selenium (a-Se) has been used as a photoconductor, normally. In this work, we use 2-dimensional device (2-D) simulator to study about physical phenomena in the a-Se, when we irradiate electromagnetic radiation (${\lambda}=486nm$) on the a-Se surface. We evaluate the electron-hole generation rate, electron-hole recombination rate, and electron/hole distribution in the a-Se using 2-D simulator. This simulator divides the device into triangle and calculates using interpolation method. This simulation method has been proposed for the first time and we expect that it will be applied for the development of digital X-ray image detector.

• Journal of KIISE:Software and Applications
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• v.31 no.3
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• pp.276-292
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• 2004

In this paper. we present methods that extract lung regions from chest EBT(electron beam tomography) images then segment the extracted lung region into lung lobes. We use histogram based thresholding and mathematical morphology for extracting lung regions. For detecting pulmonary fissures, we use edge detector and knowledge-based search method. We suggest this edge detector, which uses adaptive filter scale, to work very well for real edge and insensitive for edge by noise. Our experiments showed about 95% accuracy or higher in extracting lung regions and about 5 pixel distance error in detecting pulmonary fissures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

• Journal of Radiation Protection and Research
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• v.30 no.1
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• pp.35-37
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• 2005

The radiation detector research group at KAERI has developed a high efficiency neutron detector using a Gas Electron Multiplier (GEM). The double GEM was fabricated and operated in an Ar/Isobutane mixture. For an application to a high efficiency neutron detector, $^6Li\;or\;^{10}B$ neutron converters coated on each surface of the multi GEM foils were considered. The optimized thickness of the thin film for a neutron detection was calculated with the MCNP and SRIM. The neutron efficiency was calculated by changing the chemical components of the thin film, and the thickness of the thin film. The thermalized neutrons were measured by a GEM detector with a thin neutron converter on the drift plate.

• Progress in Medical Physics
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• v.6 no.1
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• pp.49-57
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• 1995

The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35％ large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20％ for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13％ discrepancy and a linear sensitive as increased temperature.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.419-422
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• 2001

This paper presents the principle and fabrication of a novel micro mass spectrometer and emission test of hot electron for ionization. A micro mass spectrometer consists of a micro ion source and a micro ion separator. The micro ion source consists of a hot filament and grid electrodes. Electrons emitted from a hot filament are to ionize some sample molecules. The ions are accelerated to an ion detector by an electric field. Mass can be analyzed by using the time of fight depending on the mass-to-charge ratio. The current of hot electron emission from the hot filament is measured for various input voltages.

• Journal of Magnetics
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• v.17 no.4
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• pp.271-274
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• 2012

We examine dosimetry application of irradiated D-fructose materials using electron paramagnetic resonance (EPR). Consequently, we consider that fructose is one of best dosimetry materials. We found that fructose is one of best candidates for dosimetry due to high linearity tilt of EPR signal intensity as a function of dose, irrelevant to photon energy, constant fading value. Also, our results show that fructose materials can be applied as a radiation detector to very weak radiation doses of 0.001 Gray by using EPR at a low temperature (T = 220 K).

• Journal of Radiation Protection and Research
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• v.28 no.4
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• pp.343-348
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• 2003

We have investigated in detail the operating properties of Gas Electron Multiplier (GEM) detectors with a double conical and a cylindrical structure in a wide range of external fields and GEM voltages. With the double conical GEM, the gain gradually increased with time by 10%; whereas this surface charging was eliminated with the cylindrical GEM. Effective gains above 1000 were easily observed over a wide range of collection field strengths in a gas mixture of $Ar/CO_2(70/30)$. The transparency and electron collection efficiency were found to depend on the ratio of external field and the applied GEM voltage; the mutual influence of both drift and collection fields was found to be trivial.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.10
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• pp.28-34
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• 1997

This paper describes an automatic measurement method for the in-line inspection of assembly tolerances of cathod ray electron guns. The method uses an optical microscope with a CCD camera as a probe. An automatic gap recognition algorthm with digital image processing and a new software autofocus algorithm based on using an optimal edge detector have been developed to improve the measuring accuracy. An inspection system has been proposed and practically implemented for in-line inspection to a real factory automation line. The inspection system consists of a gap inspection part and an eyelet. Total time consumed for inspecting all measuring items is about 10 seconds and the repeatability is below .+-. 5 .mu. m