• BMB Reports
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• 제30권6호
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• pp.397-402
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• 1997

A thiol-specific spin label was attached to cysteine-102 of yeast cytochrome c and electron paramagnetic resonance (EPR) spectra were measured as a function of added cytochrome c oxidase concentration. The intensity decreased due to line broadening as cytochrome c formed a complex with cytochrome c oxidase and reached a minimum when the ratio of cytochrome c to cytochrome c oxidase became one. Replacement of either Lys-72 or Lys-87 of cytochrome c by Glu did not result in a significant change in binding affinity. Interestingly the K72E mutant, unlike K87E, had a much lower rate of electron transfer than the wild type. These results indicate that many positively charged residues as a group participate in complex formation but Lys-72 might be important for cytochrome c to be locked in an orientation for an efficient electron transfer. A stoichiometry of 1 was also confirmed by optical absorption of the cytochrome c-cytochrome c oxidase complex which had been run through a gel chromatography cloumn to remove unbound cytochrome c. The EPR spectrum of this 1:1 complex, however, was a mixture of two components. This explains a biphasic kinetics for a single binding site on cytochrome c oxidase without invoking conformational transition.

• 한국재료학회지
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• 제27권6호
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• pp.345-349
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• 2017

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.

• Journal of Ginseng Research
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• 제5권1호
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• pp.65-72
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• 1981

In this experiment, observations were made on the effects of ginseng saponin, one of the major components of Korean ginseng (Panax ginseng, C. A. Meyer) root, on the membranes of microorganism (E. coli K-12), the concentration of intracelluar and extracellular cycle AMP therein, and uptake of U-14C-glucose. When the E. coli were grown on media containing 0.1% ginseng saponin, the growth was faster than for that of the control by about 30 minutes. The lysis of E. coli grown on the ginseng saponin medium increased to about double that of the control in the stationary phase. And the amount of protein and lipopolysaccharides in the outer cell meberances increased 25% and 80% respectively in comparison with the control. By electron microscope observation, it was shown that the periplasmic region of the E. coli grown on the ginseng saponin medium was widened it was observed that the cellular cyclic AMP content of the E. coli increased significantly to the hightest levels between the late exponential phase and early stationary phase. The total cyclic AMP content of E. coli grown on the ginseng saponin medium decreased about 50% when compared to that of the control.

• 대한전자공학회논문지
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• 제5권1호
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• pp.1-5
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• 1968

GaAs의 단결정은 Ga의 용액으로부터 epitaxial 방법으로 성장시키는데 300°K에서는 carrier concentration 10 /㎤에서 electron-mobility 7,500∼9,300㎠/V-sec. 정도의 것이 얻어지며 77°K에서는 electron-mobility 50,000∼95,000㎠/V-sec.의 것이 얻어진다. mobility-온도 관계곡선의 이론적인 것과 실험적인 것을 비교해 보면 77°K에서 430°K의 온도범위내에서 ion화한 불순물과 phonon이 주요한 scattering mechanism이라는 것을 나타낸다. 이것은 epitaxial층이 mobility를 제한하는 다른 결함을 별로 내포하지 않는다는 것을 의미한다. epitaxial층의 photoluminescence spectra는 심부에 존재하는 결함의 준위에 의한 방출을 나타내지 않는다.

• Journal of Microbiology and Biotechnology
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• 제33권9호
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• pp.1179-1188
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• 2023

Escherichia coli, particularly multidrug-resistant (MDR) strains, is a serious cause of healthcare-associated infections. Development of novel antimicrobial agents or restoration of drug efficiency is required to treat MDR bacteria, and the use of natural products to solve this problem is promising. We investigated the antimicrobial activity of dried green coffee (DGC) beans, coffee pulp (CP), and arabica leaf (AL) crude extracts against 28 isolated MDR E. coli strains and restoration of ampicillin (AMP) efficiency with a combination test. DGC, CP, and AL extracts were effective against all 28 strains, with a minimum inhibitory concentration (MIC) of 12.5-50 mg/ml and minimum bactericidal concentration of 25-100 mg/ml. The CP-AMP combination was more effective than CP or AMP alone, with a fractional inhibitory concentration index value of 0.01. In the combination, the MIC of CP was 0.2 mg/ml (compared to 25 mg/ml of CP alone) and that of AMP was 0.1 mg/ml (compared to 50 mg/ml of AMP alone), or a 125-fold and 500-fold reduction, respectively, against 13-drug resistant MDR E. coli strains. Time-kill kinetics showed that the bactericidal effect of the CP-AMP combination occurred within 3 h through disruption of membrane permeability and biofilm eradication, as verified by scanning electron microscopy. This is the first report indicating that CP-AMP combination therapy could be employed to treat MDR E. coli by repurposing AMP.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

• 공업화학
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• 제16권6호
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• pp.853-856
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• 2005

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, $Cl_2/Ar$, 그리고 $SF_6/Ar$들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, $Cl_2/Ar$, $BCl_3/Ar$을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.

• 생명과학회지
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• 제21권10호
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• pp.1487-1493
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• 2011

염농도에 따른 E. tarda CK41의 운동성을 알아보기 위하여 1.0%와 3.5%의 염농도를 가지는 운동성 측정 배지에서 집락의 변화를 관찰한 결과, 3.5% 염농도 조건에서 운동성이 감소하는 것을 확인할 수 있었다. 1.0%과 3.5% 염농도 조건에서의 생육도를 측정해본 결과 각 염농도 조건에 따른 생균수의 차이는 매우 적은 것으로 보아, 높은 염농도에서의 운동성의 감소는 생육정체가 아닌 실질적인 운동성의 차이에 의함을 알 수 있었다. 이러한 염농도에 의한 운동성의 차이가 편모에 의한 것인지를 알아보기 위하여 투과 전자 현미경으로 형태학적 관찰을 해본 결과, 3.5% 염농도에서는 편모의 형성이 되지 않음을 확인하였다. E. tarda는 PFAD와 FDP 두개의 편모 유전자를 가지며 이들간의 아미노산 상동률은 93%로 높은 편이다. 편모의 발현양의 확인을 위하여 PFAD 특이적인 다클론성 항체를 제작하기 위하여, PFAD를 과발현시키는 재조합 플라스미드 pBP793을 구축하여 대장균 발현시스템으로 발현시켜 정제한 후, 토끼에서 면역반응을 유도하여 특이 항체를 제작하였다. PFAD 특이적인 다클론성 항체를 이용한 immunoblot assay 결과, 3.5% 염농도 조건에서 배양한 E. tarda CK41의 경우 1.0% 염농도에서 보다 반응하는 면역 활성 단백질 밴드가 낮은 것으로 측정되었다. 이러한 결과를 종합하여 볼 때, 염농도가 높은 해수환경에서의 운동성의 감소는 E. tarda CK41의 편모 단백질이 제대로 발현되지 않아 기능적인 편모의 형성이 이루어지지 않는다는 것을 예증하고 있다. 향후 연구에서 어떠한 메카니즘에 의해 염농도가 flagellin의 발현을 조절하는지를 밝힐 필요가 있다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.67-74
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• 2002

A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.