• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.250-250
• /
• 2012

Organic light-emitting diodes (OLED) and polymer light emitting diodes (PLED) have been regarded as the candidate for the next generation light source and flat panel display. Currently, the most common OLED industrial fabrication technology used in producing real products utilizes a fine shadow mask during the thermal evaporation of small molecule materials. However, due to high potential including low cost, easy process and scalability, various researches about solution process are progressed. Since polymer has some disadvantages such as short lifetime and difficulty of purifying, small molecule OLED (SMOLED) can be a good alternative. In this work, we have demonstrated high efficient solution-processed OLED with small molecule. We use CBP (4,4'-N,N'-dicarbazolebiphenyl) as a host doped with green dye (Ir(ppy)3 (fac-tris(2-phenyl pyridine) iridium)). PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) and TPD (N,N'diphenyl-N,N'-Bis (3-methylphenyl)-[1,1-biphenyl]-4,4'-diamine) are employed as an electron transport material and a hole transport material. And TPBi (2,2',2''-(1,3,5-phenylene) tris (1-phenyl-1H-benzimidazole)) is used as an hole blocking layer for proper hole and electron balance. With adding evaporated TPBi layer, the current efficiency was very improved. Among various parameters, we observed the property of OLED device by changing the thickness of hole transporting layer and solvent which can dissolve organic material. We could make small molecule OLED device with finding proper conditions.

• Journal of the Korean Ceramic Society
• /
• v.47 no.1
• /
• pp.82-85
• /
• 2010

Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.311-312
• /
• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.6
• /
• pp.567-572
• /
• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.3
• /
• pp.124-127
• /
• 2005

It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene$(C_60)$ as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was $2.65\%$ at illumination intensity $100\;mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.240-244
• /
• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.264-264
• /
• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.5
• /
• pp.1627-1637
• /
• 2012

The coupling reaction between 5-bromo-3-phenylbenzo[c]isoxazole and diphenylamine followed by further condensation with a mono-, di- or ter-acetyl aromatic compound in the presence of diphenyl phosphate at $145^{\circ}C$ gave a novel asymmetric diarylquinolines, oligoquinolines with diphenylamine endgroups, and a first generation quinoline dendrimer in 41-82% isolated yield. The electrochemical and photophysical properties of the oligoquinolines were characterized by cyclic voltammograms (CVs) and spectroscopy. All the quinolines emit bright sky blue light due to charge transfer from quinoline group to diphenly amine with very high quantum efficiency (> 90%). Organic light-emitting diodes (OLEDs) were fabricated using these quinolines as emitting materials. Among different device architectures explored, OLEDs with a structure of ITO/PEDOT (40 nm)/TAPC (15 nm)/D-A quinoline (40 nm)/TPBI (30 nm)/LiF (1 nm)/Al using TAPC as an electron blocking layer and TPBI as a hole blocking layer gave the best performance. A high external quantum efficiency in the range of 1.2-2.3% were achieved in all the quinolines with the best performance in BBQA(5). Our results indicate diarylamino-substituted oligoquinoline and dendrimer are promising materials for OLEDs applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1070-1073
• /
• 2003

We have studied the characteristics of organic light-emitting diodes(OLEDs) with the PTFE buffer layer. The OLEDs have been based on the molecular compounds, N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and the Polytetrafluoroethylene (PTFE) as a buffer layer. The devices of structure were fabricated ITO/PTFE/TPD(40nm)/$Alq_3$(60nm)/Al( 150nm) to see the effects of the PTFE buffer layer in organic EL devices. The thickness of the PTFE layer varied from 0.5 to 10[nm]. We were measured Current-Voltage-Luminance Characteristics and Luminance efficiency due to the variation of PTFE thickness. the PTFE layer was reported that helped to enhance the hole tunneling injection and effectively impede induim diffusion from the ITO electrode. We have obtained an improvement of luminance efficiency when the PTFE thickness is 0.5[nm] is used. The improvement of efficiency of is expected due to a function of hole-blocking of PTFE in OLEDs.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1438-1439
• /
• 2011

In this paper, we studied effects on the efficiency, according to thickness of the electron injection layer(EIL) for improving efficiency of Organic Light Emitting Diodes(OLEDs). For the first time, after confirming the optimum thickness of the EIL material $Cs_2CO_3$, we designed OLED devices having a structure of ITO/TPD/$Alq_3/Cs_2CO_3$/Al. And we manufactured devices applying for the optimum thickness of the material in the simulation with thermal evaporating method. And we investigated how the EIL material $Cs_2CO_3$ effects on efficiency of OLEDs in the EIL. As the result, because the EIL material $Cs_2CO_3$ reduces energy potential barrier of the EIL, it facilitated the electron transfer. And, as blocking the hole transfer contributes to an increased recombination, we confirmed that the efficiency of OLEDs increased. And compared to the device without using the EIL material, the device using thickness 1.0 nm of $Cs_2CO_3$ in the EIL shows the excellent efficiency. Therefore, we confirmed that the luminance and the external quantum efficiency increase about 600% and 500% respectively.