• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.302-305
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• 2000

It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.

• Journal of Welding and Joining
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• v.35 no.1
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• pp.49-54
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• 2017

In this study, the volumetric heat source in electron beam welding (EBW) is modeled through finite element method taking advantage of ABAQUS software package. Since this welding method is being applied in plates with different thicknesses and also considering that residual stresses reduce the strength of these weldments, the effect of thickness in the distribution and magnitude of residual stresses after welding is studied. Regarding the vast application of Inconel 706 super-alloy in aerospace industries, this material was selected in the current research. In order to validate the finite element model, the obtained results were compared to those of other researchers in this area, and good agreement was observed. The simulation results revealed that increase in the plate thickness leads to increase in the residual stresses. In addition heat treatment in the base metal (before welding) increases the residual stresses significantly.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.97-102
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• 2000

We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.97-98
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• 2006

High current behaviors of extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOS) with double polarity source (DPS) for electrostatic discharge (ESD) protection are analyzed. Simulation based contour analyses reveal that combination of bipolar junction transistor operation and deep electron channeling induced by high electron injection gives rise to the second on-state. Therefore, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.97-98
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• 2006

High current behaviors of the grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2-nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.153-158
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• 2007

The present study covers numerical analysis of a thermionic scanning electron microscope(SEM) column. The SEM column contains an electron optical system in which electrons are emitted and moved to form a focused beam, and this generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system mainly consists of a thermionic electron gun as the beam source, the lens system, the electron control unit, and the vacuum unit. For a systematic design of the electron optical system, the beam trajectories are investigated through numerical analyses by tracing the ray path of the electron beams, and the quality of resulting image is evaluated from the analysis results.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.250.1-250.1
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• 2014

A multicusp ion source has been used widely in negative hydrogen cyclotrons mainly for radioisotope productions. The ion source is designed to have cusp geometries of magnetic field inside plasma chamber, where ions are confining and their mean lifetimes increase. The magnetic confinement produced a number of permanent magnetic poles helps to increase beam currents and reduce the emittance. Therefore optimizing the number of magnets confining more ions and increasing their mean lifetime in plasma has to be investigated in order to improve the performance of the ion source. In this work a numerical simulation of the magnetic flux density from a number of permanent magnets is carried to optimize the cusp geometries producing the highest plasma density, which is clearly indicated along the full-line cusp geometry. The effect of magnetic fields and a number of poles on the plasma structure are investigated by a computing tool. The electron confinement effect becomes stronger and the density increases with increasing the number of poles. On the contrary, the escape of electrons from the loss cone becomes more frequent as the pole number increases [1]. To understand above observation the electron and ion's trajectories along with different cusp geometries are simulated. The simulation has been shown that the optimized numbers of magnets can improve the ion density and uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.346-346
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• 2011

최근 들어 나노스케일에서의 자구체(magnetic domain)에 대한 연구가 매우 활발하게 진행되고 있다. 현재 국내에서 자성 나노구조에 대한 연구가 매우 활발하게 진행 되고 있는 반면에 나노자성이미지를 연구 할 수 있는 장비는 매우 미비한 상황이다. 이러한 자성 이미징을 연구하는데 있어 가장 핵심 적인 장비가 SEMPA(Scanning Electron Microscopy with Polarization Analysis)이다. 국내에서 자성나노구조의 자화와 형상을 동시에 측정 할 수 있는 장비는 한국표준과학연구원에서 개발된 W-filament source를 사용한 SEMPA가 유일하다. 일반적으로 SEM의 경우 고에너지 빔의 전자 빔을 주사 시키고 이때 발생되는 이차 전자의 수를 2차원상의 영역에 따라 달라지는 비로 형상을 측정 하게 된다. 이때 전자의 수 뿐만 아니라 이들의 spin polarization을 측정 할 수 있다면 형상뿐 만 아니라 표면에서의 스핀 상태를 동시에 측정할 수 있게 된다. 기개발된 W-filament source를 이용한 SEMPA는 field emission source에 비하여 전자빔의 세기가 약하며 이차 전자의 수도 적어 spin polarization 감도가 현저히 떨어진다. 또한 초고진공(1x10-10torr)에서 사용할 수 없어 측정시료의 contamination을 방지 할 수 없다. 이러한 문제점들을 보안하기 위하여 field emission source를 이용한 FE-SEMPA를 개발 중이다. 본 연구에서는 설계 및 전산시늉등의 연구결과와 진행사항을 발표하고자 한다. 아울러 W-filament를 사용한 SEMPA의 연구결과에 대한 논의를 할 예정이다.

• Progress in Medical Physics
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• v.13 no.1
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• pp.21-26
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• 2002

A practical calculation algorithm which calculates the relative output factor(ROF) for irregular shaped electron field has been developed and evaluated the accuracy of the algorithm. The algorithm adapted two-source model, which assumes that the electron dose can be express as sum of the primary source component and the scattered component from the shielding block. Original two-source model has been modified in order to make the algorithm simpler and to reduce the number of parameters needed in the calculation, while the calculation error remains within clinical tolerance range. The primary source is assumed to have Gaussian distribution, while the scattered component follows the inverse square law. Depth and angular dependency of the primary and the scattered are ignored ROF can be calculated with three parameters such as, the effective source distance, the variance of primary source, and the scattering power of the block. The coefficients are obtained from the square shaped-block measurements and the algorithm is confirmed from the rectangular or irregular shaped-fields used in the clinic. The results showed less than 1.0 ％ difference between the calculation and measurements for most cases. None of cases which have bigger than 2.1 ％ have been found. By improving the algorithm for the aperture region which shows the largest error, the algorithm could be practically used in the clinic, since one can acquire the 1011 parameter's with minimum measurements(5∼6 measurements per cones) and generates accurate results within the clinically acceptable range.