Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.97-98
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- 2006
Characteristics of Double Polarity Source-Grounded Gate-Extended Drain NMOS Device for Electro-Static Discharge Protection of High Voltage Operating Microchip
마이크로 칩의 정전기 방지를 위한 DPS-GG-EDNMOS 소자의 특성
- Seo, Yong-Jin (DaeBul University) ;
- Kim, Kil-Ho (MagnaChip Semiconductor) ;
- Lee, Woo-Sun (ChoSun University)
- Published : 2006.06.22
Abstract
High current behaviors of the grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2-nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.
Keywords
- ESD (electro-static discharge);
- DPS-GG-EDNMOS (double polarity source-grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor);
- double snapback