• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.210-210
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.202-202
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• 2008

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1999년도 추계학술발표대회 논문개요집
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• pp.21-24
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• 1999

• 한국축산식품학회지
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• 제34권5호
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• pp.570-575
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• 2014

This study was conducted to compare the effects of two forms of radiation (electron and X-ray; generated by an electron beam accelerator) on the conformation and antigenic properties of hen's egg albumin, ovalbumin (OVA), which was used as a model protein. OVA solutions (2.0 mg/mL) were individually irradiated by electron beam or X-ray at the absorbed doses of 0 (control), 2, 4, 6, 8, and 10 kGy. No differences between the two forms of radiation on the structural properties of OVA were shown by spectrometric and electrophoretic analyses. The turbidity of OVA solution increased and the main OVA bands on polyacrylamide gels disappeared after irradiation, regardless of the radiation source. In competitive indirect enzyme-linked immunosorbent assay, OVA samples irradiated by electron beam or X-ray showed different immunological responses in reactions with monoclonal and polyclonal antibodies (immunoglobulin G) produced against non-irradiated OVA. The results indicate that electron beam irradiation and X-ray irradiation produced different patterns of structural changes to the OVA molecule.

• 한국의학물리학회지:의학물리
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• 제31권2호
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• pp.9-19
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• 2020

Purpose: This study aims to develop a multi-purpose electron beam irradiation device for preclinical research and material testing using the research electron linear accelerator installed at the Dongnam Institute of Radiological and Medical Sciences. Methods: The fabricated irradiation device comprises a dual scattering foil and collimator. The correct scattering foil thickness, in terms of the energy loss and beam profile uniformity, was determined using Monte Carlo calculations. The ion-chamber and radiochromic films were used to determine the reference dose-rate (Gy/s) and beam profiles as functions of the source to surface distance (SSD) and pulse frequency. Results: The dose-rates for the electron beams were evaluated for the range from 59.16 Gy/s to 5.22 cGy/s at SSDs of 40-120 cm, by controlling the pulse frequency. Furthermore, uniform dose distributions in the electron fields were achieved up to approximately 10 cm in diameter. An empirical formula for the systematic dose-rate calculation for the irradiation system was established using the measured data. Conclusions: A wide dose-rate range electron beam irradiation device was successfully developed in this study. The pre-clinical studies relating to FLASH radiotherapy to the conventional level were made available. Additionally, material studies were made available using a quantified irradiation system. Future studies are required to improve the energy, dose-rate, and field uniformity of the irradiation system.

• 한국결정성장학회지
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• 제9권2호
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• pp.207-211
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• 1999

가스원 분자선 에피택시(GS-MBE)로 성장시킨 $Si/Si_{1-x}Ge_x$ MODFET의 미세조직을 투과식 전자현미경과 간섭광학현미경을 이용하여 관찰하였다. 증착온도변화에 따른 불일치전위의 분포에 큰 변화는 없었지만, 증착온도가 높을수록 표면조도가 거칠어졌고 표면 결함이 나타났다. Si 전기활성층 근처에서는 조성경사기능층보다 전위밀도가 상당히 낮았다. 결정성장 온도를 낮춤에 따라 전기이동도는 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Tribology and Lubricants
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• 제23권1호
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• pp.14-18
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• 2007

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}N^{+}cm^{-2}$. Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.