• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.237-240
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• 2003

This paper reports the characteristics of TFTs, formed inside a location-controlled grain: "single-crystalline" Si TFTs (c-Si TFTs). Position of the grains were controlled with a great precision by "${\mu}-Czochralski$ (grain-filter) process". Effects of process parameters, such as, deposition method of gate $SiO_2$, crystallization energy density and position of the channel with respect to the grain filters on TFT characteristics is investigated. It is concluded that the characteristics of TFTs drastically improved by avoiding the grain filter from the channel region. With TFTs having the current-flow direction parallel to radial direction from the grain-filter, electron mobility and subthreshold swing of 600 $cm^2/Vs$ and 0.21 V/dec. respectively are obtained.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.441-446
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• 2017

Aluminum nitride fibers were synthesized by carbothermal reduction and nitridation of precursor fibers obtained by electrospinning. The starting materials used to synthesize the AlN fibers were $Al(NO_3)_3{\cdot}9H_2O$ and urea. Polyvinylpyrrolidone with increasing viscidity was used as the carbon source to obtain a composite solution. The mixed solution was drawn into a plastic syringe with a stainless steel needle, which was used as the spinneret and connected to a 20 kV power supply. A high voltage was supplied to the solution to facilitate the formation of a dense net of fibers on the collector. The precursor fibers were dried at $100^{\circ}C$ and then heated to $1,400^{\circ}C$ for 1 h in a microwave furnace under $N_2$ gas flow for the carbothermal reduction and nitridation. X-ray diffraction studies indicated that the synthesized fibers consisted of the AlN phase. Field emission scanning electron microscopy studies indicated that the diameter of the calcined fibers was approximately 100 nm.

• Journal of Photoscience
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• v.8 no.3_4
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• pp.105-112
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• 2001

Susceptibility to low temperature photoinhibition in photosynthetic apparatus was compared among three cucumber cultivars, Gahachungjang (GH), Banbaekjijeo (BB) and Gaeryangsymji (GR). By chilling in the light for 6 h, a sustained decrease in the potential quantum yield (Fv/Fm) and the oxidizable P700 contents was observed, and the decrease was less in GH than in BB and GR. Although the difference was small, some $\Phi_{PSII}$ remained in GH after light-chilling for 6 h indicating that a few electrons can flow around photosystem II(PSII). As a consequence, the primary electron acceptor of PSII, $Q_{A}$, was reduced slowly and was not fully reduced after light-chilling for 6 h in GH. Although the amplitude was small, the development of NPQ was also faster in GH, indicating a higher capacity for non-photochemical energy dissipation. The relative fraction of a fast relaxing component of NPQ (qf) was higher in GH. After light-chilling for 5 h, the values of qf in BB and GR became much smaller than that in GH, indicating BB and GR suffered more significant uncoupling of ATPase and/or irreversible damages in PSII. When fluorescence induction transients were recorded after chilling, significant differences in quenching coefficients (qQ and qN) were observed among the three cultivars.

• Journal of Advanced Marine Engineering and Technology
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• v.11 no.4
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• pp.50-58
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• 1987

At present it has been cleared that even carefully polished surfaces have irregularities on them which are large compared with molecular dimensions by the progress of a scanning electron microscope. When two solids are placed together, the real area of contact is very small, so that the local pressure is high and, in general, exceeds the yield pressure of the metal. Plastic flow of the solid occurs at the summits of the irregularities so that the real area of contact is proportional to the applied load. There is adhesion at local resions of contact and the friction is, in a large measure, the force required to shear them. On this view point, the friction experiment with different specimens which are carbon steel, copper and constantan was attempted to know the characteristics of temperature change in contact with different metals. Various experiments are summerized as follows; 1) With metals of high melting point, momentary 1000 .deg. C may last below $10^{-4}$ of a second. It is thought that above phenomena back up previous adhesion theory in wear. 2) As a general rule, surface temperature in contact with different metals becomes high when the load increases while it is observed that surface temperature decreases when the load increases with shapes of specimens.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.83-88
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• 2003

The reset operation of a CCD image sensor was improved using charge trapping of a MOS structure to realize a loe voltage driving. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2V to 5.5V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with $492(H){\;}{\times}{\;}510(V)$ pixels adopting this structure showed complete reset operation with the driving voltage of 3.0V. The resolution chart taken with the image sensor shows no image flow to the illumination of 30 lux, even in the driving voltage of 3.0V.

• 전자공학회논문지 IE
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• v.43 no.3
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• pp.34-40
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• 2006

Usually, fluid or fuel supply device need space to need special sensor to control motor, attaches with ancillary equipment to attach sensor. Also, difficult point follows need signal line and other circuit etc. In this paper, used that proposed control system that use hall sensor to solve discomfort and problem and difference control principle of system happens in current flow according to motor action step. Also, could reduce breakdown by sensor establishment, reduce material costs and personnel expenses as well as control system superior. Auto-pumping system sees that will can apply, develop several kind of device that use system hereafter to all fluid supply systems through soft-ware adaptation.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.12
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• pp.5185-5188
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• 2016

Objective: Targeted-drug-delivery based lipid nanoparticles has emerged as a new and effective approach in cancer chemotherapy. Here, we investigated the ability of folate-modified nanostructured lipid carriers (NLCs) to enhance letrozol (LTZ) efficacy in MCF-7 breast cancer cells. Methods: New formulations were evaluated regarding to particle size and scanning electron microscope (SEM) features. Anti-proliferative effects of LTZ loaded nanoparticles were examined by MTT assay. To understand molecular mechanisms of apoptosis and cell cycle progression, flow cytometric assays were applied. Results: Optimum size of nanoparticles was obtained in mean average of $98{\pm}7nm$ with a poly dispersity index (PDI) of 0.165. The IC50 value was achieved for LTZ was $2.2{\pm}0.2{\mu}M$. Folate-NLC-LTZ increased the percentage of apoptotic cells from 24.6% to 42.2% compared LTZ alone (p<0.05). Furthermore, LTZ loaded folate targeted NLCs caused marked accumulation of cells in the subG1 phase. Conclusion: Taken together, our results concluded that folate targeted LTZ can be considered as potential delivery system which may overcome limitations of clinical application of LTZ and improve drug efficacy in tumor tissue.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.