• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.386-388
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• 1996

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.19-25
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• 2003

Electromigration characteristics of eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure were observed after electromigration test, in which the temperature and the current density were varied from 80 to 100 $^{\circ}C$ and from 4.6${\times}$10$^4$A/$\textrm{cm}^2$ to 8.7${\times}$10$^4$A/$\textrm{cm}^2$. While voids or local thinning were found near the cathode end, hillocks were mainly observed near the anode end. From resistance measurements, it was calculated that the activation energy of the eutectic SnPb solder for electromigration was 0.77 eV. The dominant migrating element along the electron flow at 100$^{\circ}C$ was Pb.

• Bulletin of the Korean Chemical Society
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• v.29 no.11
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• pp.2114-2118
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• 2008

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1400-1402
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• 1994

Plasma polymerized thin films was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The molecular structure of thin films was investigated by GPC and FT-IR and then was discussed in relation to its quality as a resist. In the case of plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing pressure with RIE 80.

• Journal of Surface Science and Engineering
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• v.30 no.6
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• pp.365-373
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• 1997

316L and 420 Stainless steels were deposited onto AZ9ID commercial magnesium alloy by plasma spray process with various gas flow rate of, TEX>$H_2$ secondary gas. And hardness as well as were track volume, coefficient of friction also had been measured. wear and hardness were measured by using reciprocal configuration tribometer and microghardness tester, respectively. Also, the microstructure of the coatings surface the cross sectional area of coating surface and cross sectional area of coaing/Substrate interface had been analyzed with Scanning Electron Microscope(SEM) and Optical microscope(OM). Finally, optimal process parameters for the improvement of coating efficiency such as mechanical property and wear behavior were examined.

• Journal of Integrative Natural Science
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• v.1 no.1
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• pp.47-53
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• 2008

In a previous study, we showed that Cecropin A (1-8)-Magainin 2 (1-12) hybrid peptide (CA-MA)'s analogue, Anal P5, exhibit broad-spectrum antimicrobial activity. Anal P5, designed by flexible region (positions 9, 10)-substitution, Lys- (positions 4, 8, 14, 15) and Leu- (positions 5, 6, 12, 13, 16, 17, 20) substitutions, showed an enhanced antimicrobial and antitumor activity without hemolysis. The primary objective of the present study was to gain insight into the relevant mechanisms of antimicrobial activities of Anal P5 by using flow cytometric analysis. Anal P5 exhibits strong antifungal activity in a salt concentration independent manner. In addition, Anal P5 causes significant morphological alterations of the bacterial surfaces as shown by scanning electron microscopy, supporting its antibacterial activity. Its potent antibiotic activity suggests that Anal P5 is an excellent candidate as a lead compound for the development of novel antibiotic agents.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1127-1134
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• 2002

Fine ceramic particles of zirconia toughened alumina (ZTA), titania toughened alumina (TTA), and zirconia-titania toughened alumina (ZTTA) have been synthesized by ultrasonic spray pyrolysis (USP) at various temperatures from starting salt solutio ns of various compositions aiming for the development of catalytic material. These particles were characterized for properties such as shape, size and size distribution, diffraction pattern, and chemical and phase composition of elements by scanning electron microscopy (SEM), particle size analyzer (PSA), x-ray diffraction (XRD), and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Chemical compositions and sizes of ceramic composites have been controled by the stoichiometry of salt solutions and the flow rate of spraying solutions. The optimum experimental conditions for the various composite particle syntheses have been proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.587-595
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• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.