• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1220-1221
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• 2008

Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.21-24
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• 2003

The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Journal of Information Display
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• 제9권4호
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• pp.30-34
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• 2008

Field emitter arrays (FEAs) were developed using carbon nanotubes (CNTs) as electron emission sources. The CNTs were grown using a selective-positioning technique with a resist-protection layer. The light emission properties were studied through the electron emission of the CNTs on patterned islands, which were modulated with island diameter and spacing. The electron emission of CNT arrays with $5{\mu}m$ diameters and $10{\mu}m$ heights increased with increased spacing (from $10{\mu}m$ to $40{\mu}m$). The electron emission current of the $40-{\mu}m$-island-spacing sample showed a current density of 1.33 mA/$cm^2$ at E = 11 V/${\mu}m$, and a turn-on field of 7 V/${\mu}m$ at $1{\mu}A$ emission current. Uniform electron emission current and light emission were achieved with $40{\mu}m$ island spacing and $5{\mu}m$ island diameter.

• 한국재료학회지
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• 제14권3호
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• pp.186-190
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• 2004

An electron beam microcolumn composed of an electron emitter, micro lenses, scan deflector, and focus lenses have been fabricated and tested in the STEM mode. In this paper, we report a technique of precisely aligning the electron lenses by the laser diffraction patterns instead of the conventional alignment method based on aligner and STM. STEM images of a standard Cu-grid were observed using a fabricated microcolumn under both the retarding and accelerating modes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.171.1-171.1
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• 2015

Carbon nanotube emitters is very promising electron emitter for electron beam applications. We introduced the carbon nanotube electron beam (C-beam) exposure technic using triode structure. As a source, the electron beam emit from CNT emitters placed at the cathode by high electric field. Through the gate mesh, with high accelerating energy, the electron can be extracted easily and impact at the anode plate. For thin film modification, after the C-beam exposure on the amorphous silicon thin film, we found phase changes and it showed a high crystallinity from the Raman measurement. We expect that this crystallized film will be a good candidate as a new active layer of TFT.

• 한국레이저가공학회지
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• 제18권4호
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• pp.12-16
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• 2015

The research on multi electron beam systems is being carried out by various methods. We are studying multi electron beam system using miniaturized electron beam columns. The column consists of electrostatic lenses, electrostatic deflector and tip emitter. Our operating system controls 4 column array, captures images of each column and maintains the instrument. We present the usefulness of our operating system for multi columns by capturing images of each column.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.919-922
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• 2004

The Field Emission Display is potentially an excellent display with high brightness and low power consumption with wide viewing angle but more work is still needed in order to identify the ideal electron emitter for such displays. This paper will review the work that we have carried out in Cambridge aver the past couple of years on optimisation of Carbon nanotubes for use as the cold cathode emitters that are possible candidates as the electron sources in second generation FEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.764-767
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• 2007

We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.