• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• Journal of Astronomy and Space Sciences
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• 제40권3호
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• pp.101-111
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• 2023

We conducted a statistical study of polar mesospheric summer echoes (PMSEs) in relation to magnetic local time (MLT), considering the geomagnetic conditions using the K-index (or K). Additionally, we performed a case study to examine the velocity profile, specifically for high velocities (≥ ~100 m/s) varying with high temporal resolution at high K-index values. This study utilized the PMSE data obtained from the mesosphere-stratosphere-troposphere radar located in Esrange, Sweden (63.7°N, 21°E). The change in K-index in terms of MLT was high (K ≥ 4) from 23 to 04 MLT, estimated for the time PMSE was present. During the near-midnight period (0-4 MLT), both PMSE occurrence and signal-to-noise ratio (SNR) displayed an asymmetric structure with upper curves for K ≥ 3 and lower curves for K < 3. Furthermore, the occurrence of high velocities peaked at 3-4 MLT for K ≥ 3. From case studies focusing on the 0-3 MLT period, we observed persistent eastward-biased high velocities (≥ 200 m/s) prevailing for ~18 min. These high velocities were accompanied with the systematic motion of profiles at 85-88 km, including large shear formation. Importantly, the rapid variations observed in velocity could not be attributed to neutral wind effects. The present findings suggest a strong substorm influence on PMSE, especially in the midnight and early dawn sectors. The large zonal drift observed in PMSE were potentially energized by local electromagnetic fields or the global convection field induced by the electron precipitation during substorms.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.131-135
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• 1989

Hot electron simulation of silicon using Monte Carlo method was carried out to investigate impact ionization characteristics near the drain of MOSFET's at 77 and 300K. We successfully characterized drift velocity and impact ionization at 77 and 300K employing a simplified energy band structure and phonon scattering mechanisms. Woods' soft energy threshold model was introduced to the Monte Carlo simulation of impact ionization, and good agreement with reported experimental results was resulted by employing threshold energy of 1.7 eV. It is suggested that the choice of the critical angle between specular reflection and diffusive scattering of surface roughness scattering may be important in determining the impact ionization charateristics of Monte Carlo simulation near the drain of MOSFET's.

• E2M - 전기 전자와 첨단 소재
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• 제4권2호
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• pp.143-149
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• 1991

전계가 인가된 H$_{2}$와 CO기체중을 통과하는 전자의 탄성과 비탄성 충돌 단면적을 볼츠만방정식을 이용하여 추정하였는데 충돌 단면적은 운동량변환, 진동여기, 해리, 전자 여기 및 전리 충돌 단면적을 이동속도의 측정값 및 계산값을 비교하므로써 결정하였다. Gibson과 Phelps가 각각 계산한 H$_{2}$ 및 CO의 운동량변환 충돌단면적을 본 연구의 결과와 비교하였으며 이를 기초로하여 온도는 293.deg.K, 상대전계의 세기 E/N은 1*$10^{-17}$ [V$cm^{2}$].leq.E/N.leq.200*10 $^{17}$ [V$cm^{2}$]의 범위에서 전자에너지 분포함수를 산출하였으며 이렇게 산출된 에너지 분포함수 및 충돌단면적은 실험적으로 측정한 모든 수송계수의 값들을 만족하였다.

• 대한전기학회논문지
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• 제33권3호
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• pp.106-111
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• 1984

Prebreakdown current pulses arising from avalanche growth in SF6 were recorded under static uniform field at pressures up to about 400kpa. At pressures less than 100kpa the current pulses consist of the electron component observed as the fast rise of current, the negative ioncomponent which is superimposed, and the positive ion component comprising the tail of the pulse. The values of positive ion drift velocity were measured from the present pulse data. At pressures in excess of about 100 Kpa the pulse shapes becam distorted such that quantitative analysis was no longer possible, and did not indicate the action of any photosecondary process at the cathode. Breakdown appers to result from the seperate development of single avalanche.

• ETRI Journal
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• 제44권3호
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• 대한디지털의료영상학회논문지
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• 제8권1호
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• pp.51-55
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• 2006

moving photocarrier grating(MPG)기술을 이용하여 디지털 X-선 변환물질 a-Se:As 필름에서 As 첨가효과에 관하여 연구하였다. 이 방법은 시료를 조사하기 위하여 주파수를 변화시킨 2개 레이저 빔의 중첩으로 얻어진 움직이는 간섭패턴을 이용한다. 시료의 수송변수는 시료에서 변조 방향으로 유도되는 grating-속도에 의존하는 전류밀도로부터 얻어진다. As 첨가에 따른 a-Se 필름의 전자와 정공 이동도 그리고 재결합 수명을 구하였다. 전자의 이동도는 결함 상태 때문에 As 첨가에 따라 감소하는 반면, 특히 a-Se 필름에 0.3% As 첨가할 때 정공 이동도와 재결합 수명이 증가하였다. MPG 기술로 얻은 As가 첨가된 a-Se 필름의 수송성질을 a-Se:As로 제작한 X-선 detector의 X-선 감도와 비교하였다. 실험결과 0.3% As가 첨가된 a-Se으로 제작한 X-선detector가 가장 우수한 X-선 감도를 나타내었다.

• 대한방사선기술학회지:방사선기술과학
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• 제28권4호
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• pp.267-272
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• 2005

moving photocarrier grating 기술을 이용하여 디지털 X-선 변환물질 a-Se:As 필름에서 As 첨가효과에 관하여 연구하였다. 이 방법은 시료를 조사하기 위하여 주파수를 변화시킨 2개 레이저 빔의 중첩으로 얻어진 움직이는 간섭패턴을 이용한다. 시료의 수송변수는 시료에서 변조 방향으로 유도되는 grating-속도에 의존하는 전류밀도로부터 얻어진다. As 첨가에 따른 a-Se 필름의 전자와 정공 이동도 그리고 재결합 수명을 구하였다. 전자의 이동도는 결함 상태 때문에 As 첨가에 따라 감소하는 반면, 특히 a-Se 필름에 0.3% As 첨가할 때 정공 이동도와 재결합 수명이 증가하였다. MPG 기술로 얻은 As가 첨가된 a-Se 필름의 수송성질을 a-Se:As로 제작한 X-선 디텍터의 X-선 감도와 비교하였다. 실험결과 0.3% As가 첨가된 a-Se으로 제작한 X-선 디텍터가 가장 우수한 X-선 감도를 나타내었다.