Impact Ionization Characteristics Near the Drain of Silicon MOSFET's at 77 and 300 K Using Monte Carlo Method

몬데 칼로 방법을 이용한 실리콘 MOSFET의 드레인영역에서 77 K와 300 K의 Impact Ionization 특성

Hot electron simulation of silicon using Monte Carlo method was carried out to investigate impact ionization characteristics near the drain of MOSFET's at 77 and 300K. We successfully characterized drift velocity and impact ionization at 77 and 300K employing a simplified energy band structure and phonon scattering mechanisms. Woods' soft energy threshold model was introduced to the Monte Carlo simulation of impact ionization, and good agreement with reported experimental results was resulted by employing threshold energy of 1.7 eV. It is suggested that the choice of the critical angle between specular reflection and diffusive scattering of surface roughness scattering may be important in determining the impact ionization charateristics of Monte Carlo simulation near the drain of MOSFET's.