• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.115-120
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• 2008

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.524-535
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• 1993

본 연구에서는 SF$_{6}$가스의 전자이동속도를 더블히트파이프 실험장치를 이용하여 유도전류법에 의해 실험적으로 측정하였다. 그리고 전자수송계수의 정량적인 산출은 볼츠만 수송 방정식의 Backward-Prolongation을 이용하여 계산하고 해석하였다. 이때 전자에너지 분포함수와 전리 및 부착계수를 구하고 운동량변환단면적을 결정하였다. 그리고 실험적으로 측정된 SF$_{6}$가스의 전자이동속도와 계산된 전자수송계수를 비교 검토하여 해석함으로서 절연체의 기초적인 물성자료로 사용할 수 있다.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.371-375
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• 2007

In-situ observation of electromigration behavior of eutectic SnPb solder was performed as a function of line length at $100^{\circ}C$, $6{\times}10^4A/cm$ condition in a scanning electron microscope chamber. The incubation time for edge drift and the edge drift velocity increase as line length increases, which are discussed with the void nucleation stage of solder bump and the electromigration back flux force, respectively. Finally, the existence of electromigration product (jL) and its line length dependency are also discussed.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.2
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• pp.65-69
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• 2004

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.75-78
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• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30\sim300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The transport coefficients for electrons in (0.2[%])$SF_6$-Ar and (0.5[%]$SF_6$ - Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.613-616
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• 2001

This SF6 gas is widely used in industrial of insulation field. In this paper, N2 is mixed to improve pure SF6 gas characteristics. Electron transport coefficients in SF6-N2 mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical EIN, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of SF6-N2 mixture gases.?⨀␍?܀㘱〮㜳㬓M敤楣楮攠慮搠桥污瑨

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.613-616
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• 2001

This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.6
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• pp.96-103
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• 1996

This paper describes the electron transport characteristics in SF6 gas calculated for range of E/N values from 150~ 800[Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections detennined by the authors and the values of electron swarm parameters are obtained by TOF method. The results gRined that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or Rttachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches is concerned electron energy non--equilibrium region. The electron energy distributions function were analysed in sulphur hexafluoride at E/N : 500~800[Td) for a case of non-equilibrium region in the mean electron energy. The validity of the results obtained has been confilll1ed by a TOF method.